ZC841TC
22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

From DIODES Incorporated

StatusACTIVE
Breakdown Voltage-Min22 V
ConfigurationSINGLE
Diode Capacitance Ratio-Min3.75
Diode Element MaterialSILICON
Diode TypeVARIABLE CAPACITANCE DIODE
Number of Elements1
Number of Terminals3
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleSMALL OUTLINE
Power Dissipation Limit-Max0.5000 W
Surface MountYes
Terminal FinishMATTE TIN
Terminal FormGULL WING
Terminal PositionDUAL
Variable Capacitance Diode ClassificationHYPERABRUPT

External links