IDT71V67803S150BG8
512K X 18 CACHE SRAM, 3.8 ns, PBGA119

From Integrated Device Technology

StatusACTIVE
Access Time-Max (tACC)3.8 ns
Memory Density9.44E6 deg
Memory IC TypeCACHE SRAM
Memory Width18
Mfr Package Description14 X 22 MM, PLASTIC, BGA-119
Number of Functions1
Number of Terminals119
Number of Words524288 words
Number of Words Code512K
Operating ModeSYNCHRONOUS
Operating Temperature-Max70 Cel
Operating Temperature-Min0.0 Cel
Organization512K X 18
Package Body MaterialPLASTIC/EPOXY
Package ShapeRECTANGULAR
Package StyleGRID ARRAY
Parallel/SerialPARALLEL
Supply Voltage-Max (Vsup)3.46 V
Supply Voltage-Min (Vsup)3.14 V
Supply Voltage-Nom (Vsup)3.3 V
Surface MountYes
TechnologyCMOS
Temperature GradeCOMMERCIAL
Terminal FinishTIN LEAD
Terminal FormBALL
Terminal Pitch1.27 mm
Terminal PositionBOTTOM

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