BSC010NE2LSI MOSFET N-CH 25V 38A TDSON-8
From Infineon Technologies
| Category | Discrete Semiconductor Products |
| Current - Continuous Drain (Id) @ 25°C | 38A (Ta), 100A (Tc) |
| Datasheets | BSC010NE2LSI |
| Drain to Source Voltage (Vdss) | 25V |
| FET Feature | Logic Level Gate |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Family | FETs - Single |
| Gate Charge (Qg) @ Vgs | 59nC @ 10V |
| Input Capacitance (Ciss) @ Vds | 4200pF @ 12V |
| Mounting Type | Surface Mount |
| Online Catalog | N-Channel Logic Level Gate FETs |
| Other Names | BSC010NE2LSI-ND BSC010NE2LSIATMA1 SP000854376 |
| Package / Case | 8-PowerTDFN |
| Packaging | Tape & Reel (TR) |
| Power - Max | 96W |
| Product Photos | 8-PowerTDFN |
| Rds On (Max) @ Id, Vgs | 1.05 mOhm @ 30A, 10V |
| Series | OptiMOS™ |
| Standard Package | 5,000 |
| Supplier Device Package | PG-TDSON-8 |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
