BSM10GD120DN2
IGBT Modules 1200V 10A FL BRIDGE

From Infineon Technologies

BrandInfineon Technologies
Collector- Emitter Voltage VCEO Max1200 V
Collector-Emitter Saturation Voltage2.7 V
ConfigurationHex
Continuous Collector Current at 25 C15 A
Factory Pack Quantity500
Gate-Emitter Leakage Current120 nA
ManufacturerInfineon
Maximum Gate Emitter Voltage+/- 20 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 40 C
Mounting StyleScrew
Package / CaseEconoPACK 2
Pd - Power Dissipation80 W
ProductIGBT Silicon Modules
Product CategoryIGBT Modules
RoHSNo

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