Product Datasheet Search Results:

MJ11012.pdf1 Pages, 174 KB, Scan
MJ11012
Advanced Semiconductor, Inc.
RANSISTOR,BJT,DARLINGTON,NPN,500V V(BR)CEO,50A I(C),TO-204AE
MJ11012.pdf4 Pages, 51 KB, Original
MJ11012
Central Semiconductor Corp.
30 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
MJ11012LEADFREE.pdf4 Pages, 51 KB, Original
MJ11012LEADFREE
Central Semiconductor Corp.
30 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-3
MJ11012.pdf3 Pages, 115 KB, Scan
MJ11012
Motorola / Freescale Semiconductor
30 Amp Darlington Power Transistors Complementary Silicon 60-120 Volts 200 Watts
MJ11012.pdf3 Pages, 140 KB, Original
MJ11012
Mospec Semiconductor
POWER TRANSISTORS(30A,60-120V,200W)
LMJ11012.pdf1 Pages, 112 KB, Scan
LMJ11012
N/a
Semiconductor Master Cross Reference Guide
MJ11012.pdf1 Pages, 79 KB, Scan
MJ11012
N/a
Shortform Transistor Datasheet Guide
MJ11012.pdf4 Pages, 66 KB, Original
MJ11012
On Semiconductor
High-Current Complementary Silicon Transistors
MJ11012-D.pdf4 Pages, 66 KB, Original
MJ11012-D
On Semiconductor
High-Current Complementary Silicon Transistors
MJ11012G.pdf4 Pages, 117 KB, Original
MJ11012G
On Semiconductor
TRANS DARL NPN 30A 60V TO-3 - MJ11012G
MJ11012.pdf3 Pages, 251 KB, Scan
MJ11012
Solid State
Bipolar (BJT) Single Transistor, Darlington, NPN, 60 V, 200 W, 30 A, 1000
MJ11012.pdf1 Pages, 201 KB, Original
MJ11012
Solid State Inc.
Trans Darlington NPN 9999-Pin(9999+Tab) TO-3

Product Details Search Results:

Centralsemi.com/MJ11012
{"Status":"ACTIVE","Terminal Finish":"TIN LEAD","Package Body Material":"METAL","Mfr Package Description":"TO-3, 2 PIN","Terminal Form":"PIN\/PEG","Power Dissipation Ambient-Max":"200 W","Package Style":"FLANGE MOUNT","DC Current Gain-Min (hFE)":"1000","Collector-emitter Voltage-Max":"60 V","Transistor Element Material":"SILICON","Transition Frequency-Nom (fT)":"4 MHz","Collector Current-Max (IC)":"30 A","Case Connection":"COLLECTOR","Terminal Position":"BOTTOM","Transistor Polarity":"NPN","Package Shape":"...
1336 Bytes - 08:51:13, 08 October 2024
Centralsemi.com/MJ11012LEADFREE
{"Terminal Finish":"MATTE TIN (315)","Transistor Polarity":"NPN","Terminal Form":"PIN\/PEG","Power Dissipation Ambient-Max":"200 W","Collector Current-Max (IC)":"30 A","Package Shape":"ROUND","Status":"ACTIVE","Lead Free":"Yes","Package Body Material":"METAL","Transistor Element Material":"SILICON","EU RoHS Compliant":"Yes","Configuration":"DARLINGTON","Transistor Type":"GENERAL PURPOSE POWER","Collector-emitter Voltage-Max":"60 V","Terminal Position":"BOTTOM","Case Connection":"COLLECTOR","Mfr Package Desc...
1434 Bytes - 08:51:13, 08 October 2024
N_a/MJ11012
{"Category":"Transistor, Darlington Transistor","Amps":"30A","MHz":">4 MHz","Volts":"60V"}...
543 Bytes - 08:51:13, 08 October 2024
Onsemi.com/MJ11012G
{"Category":"Discrete Semiconductor Products","Current - Collector (Ic) (Max)":"30A","Online Catalog":"NPN Transistors","Transistor Type":"NPN - Darlington","Frequency - Transition":"4MHz","Product Photos":"TO-3 Pkg","Vce Saturation (Max) @ Ib, Ic":"4V @ 300mA, 30A","Current - Collector Cutoff (Max)":"1mA","Series":"-","Standard Package":"100","Voltage - Collector Emitter Breakdown (Max)":"60V","Supplier Device Package":"TO-3","Packaging":"Tray","Datasheets":"MJ11012,15,16","Power - Max":"200W","Family":"Tr...
1706 Bytes - 08:51:13, 08 October 2024
Solidstateinc.com/MJ11012
{"Collector Emitter Voltage V(br)ceo:":"60 V","Transistor Polarity:":"NPN","MSL:":"-","No. of Pins:":"2","DC Collector Current:":"30 A","Power Dissipation Pd:":"200 W","Transistor Case Style:":"TO-3","Operating Temperature Max:":"200 \u00b0C","DC Current Gain hFE:":"1000","Operating Temperature Min:":"-65 \u00b0C","SVHC:":"No SVHC (15-Jun-2015)","Transition Frequency Typ ft:":"-"}...
1352 Bytes - 08:51:13, 08 October 2024
Solid_state_inc_/MJ11012
{"Polarity":"NPN","Mounting":"Through Hole","Rad Hardened":"No","Package Type":"TO-3","Configuration":"Single","Number of Elements":"1"}...
1108 Bytes - 08:51:13, 08 October 2024