JANTX1N5809URS DIODE GEN PURP 100V 3A BPKG
From Microsemi HI-REL [MIL]
| Capacitance @ Vr, F | 60pF @ 10V, 1MHz |
| Category | Discrete Semiconductor Products |
| Current - Average Rectified (Io) | 3A |
| Current - Reverse Leakage @ Vr | 5µA @ 100V |
| Datasheets | 1N5807,09,11 US/URS |
| Diode Type | Standard |
| Family | Diodes, Rectifiers - Single |
| Mounting Type | Surface Mount |
| Operating Temperature - Junction | -65°C ~ 175°C |
| Other Names | 1086-19442 |
| Package / Case | SQ-MELF, B |
| Packaging | Bulk |
| Reverse Recovery Time (trr) | 30ns |
| Series | Military, MIL-PRF-19500/477 |
| Speed | Fast Recovery = 200mA (Io) |
| Standard Package | 100 |
| Supplier Device Package | B, SQ-MELF |
| Voltage - DC Reverse (Vr) (Max) | 100V |
| Voltage - Forward (Vf) (Max) @ If | 875mV @ 4A |
