P2HM505HA 35 A, 500 V, 0.12 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From Nihon Inter Electronics Corporation
| Status | ACTIVE |
| Case Connection | ISOLATED |
| Channel Type | N-CHANNEL |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| DS Breakdown Voltage-Min | 500 V |
| Drain Current-Max (ID) | 35 A |
| Drain-source On Resistance-Max | 0.1200 ohm |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Mfr Package Description | MODULE-8 |
| Number of Elements | 2 |
| Number of Terminals | 8 |
| Operating Mode | ENHANCEMENT |
| Package Body Material | UNSPECIFIED |
| Package Shape | RECTANGULAR |
| Package Style | FLANGE MOUNT |
| Pulsed Drain Current-Max (IDM) | 100 A |
| Terminal Form | UNSPECIFIED |
| Terminal Position | UPPER |
| Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
| Transistor Type | GENERAL PURPOSE POWER |
