2SD1621S-TD-E Trans GP BJT NPN 25V 2A 1300mW
From ON SEMICONDUCTOR
| Category | Bipolar Power |
| Collector Current (DC) | 2(A) |
| Collector-Base Voltage | 30(V) |
| Configuration | Single |
| DC Current Gain | 140 |
| Emitter-Base Voltage | 6(V) |
| Frequency | 150(MHz) |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Output Power | Not Required(W) |
| Power Dissipation | 1.3(W) |
| Rad Hardened | No |
| Transistor Polarity | NPN |
