Product Datasheet Search Results:
6 Pages, 261 KB, Scan- PHD2N50E118
- Nxp
- 2 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
10 Pages, 72 KB, Original- PHD2N50E
- Philips Semiconductors / Nxp Semiconductors
- PowerMOS transistors Avalanche energy rated
Product Details Search Results:
Nxp.com/PHD2N50E118
{"Terminal Form":"GULL WING","Avalanche Energy Rating (Eas)":"130 mJ","Package Shape":"RECTANGULAR","Status":"ACTIVE","Package Body Material":"PLASTIC/EPOXY","Transistor Element Material":"SILICON","Drain Current-Max (ID)":"2 A","Configuration":"SINGLE WITH BUILT-IN DIODE","Drain-source On Resistance-Max":"5 ohm","Transistor Type":"GENERAL PURPOSE POWER","Pulsed Drain Current-Max (IDM)":"8 A","Channel Type":"N-CHANNEL","FET Technology":"METAL-OXIDE SEMICONDUCTOR","DS Breakdown Voltage-Min":"500 V","Transist...
1400 Bytes - 01:03:29, 17 January 2026
Semiconductors.philips.com/PHD2N50
{"C(iss) Max. (F)":"236p","Absolute Max. Power Diss. (W)":"42","g(fs) Max, (S) Trans. conduct,":"1.3","I(D) Abs. Max.(A) Drain Curr.":"1.2","@V(GS) (V) (Test Condition)":"10","t(d)off Max. (s) Off time":"60n","r(DS)on Max. (Ohms)":"5.0","@V(DS) (V) (Test Condition)":"25","I(DM) Max (A)(@25°C)":"7.5","I(GSS) Max. (A)":"200n","g(fs) Min. (S) Trans. conduct.":"500m","V(BR)GSS (V)":"30","@I(D) (A) (Test Condition)":"1.0","@Freq. (Hz) (Test Condition)":"1.0M","V(GS)th Max. (V)":"4.0","V(GS)th Min. (V)":"2.0...
1392 Bytes - 01:03:29, 17 January 2026
Documentation and Support
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| File Name | File Size (MB) | Document | MOQ | Support |
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| SS5J2-60LPHD2-S05DSB6.pdf | 40.58 | 1 | Request |
