IRF360-JQR-BR1
25 A, 400 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3

From Semelab Plc.

StatusACTIVE
Channel TypeN-CHANNEL
ConfigurationSINGLE
DS Breakdown Voltage-Min400 V
Drain Current-Max (ID)25 A
Drain-source On Resistance-Max0.2300 ohm
EU RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Lead FreeYes
Number of Elements1
Number of Terminals2
Operating ModeENHANCEMENT
Package Body MaterialMETAL
Package ShapeROUND
Package StyleFLANGE MOUNT
Terminal FinishTIN SILVER COPPER
Terminal FormPIN/PEG
Terminal PositionBOTTOM
Transistor Element MaterialSILICON
Transistor TypeGENERAL PURPOSE POWER

External links