PHN210T/R Matched Pair of N-Channel Enhancement MOSFETs
From Philips Semiconductors / NXP Semiconductors
| @I(D) (A) (Test Condition) | 2.2 |
| @Temp (°C) (Test Condition) | 25 |
| @V(DS) (V) (Test Condition) | 20 |
| @V(GS) (V) (Test Condition) | 10 |
| Absolute Max. Power Diss. (W) | 2 |
| I(D) Abs. Drain Current (A) | 3.5 |
| I(DSS) Max. (A) | 100n |
| I(GSS) Max. (A) | 100n |
| Package | SO |
| Thermal Resistance Junc-Amb. | 35 |
| V(BR)DSS (V) | 30 |
| V(BR)GSS (V) | 20 |
| V(GS)th Max. (V) | 2.8 |
| V(GS)th Min. (V) | 1 |
| g(fs) Max, (S) Trans. conduct, | 4.5 |
| g(fs) Min. (S) Trans. conduct. | 2 |
| r(DS)on Max. (Ohms) | .1 |
