Product Datasheet Search Results:
- TSM2N7000
- Taiwan Semiconductor
- 60v N-channel Enhancement Mode Mosfet
- TSM2N7000CT
- Taiwan Semiconductor
- 60V N-Channel MOSFET
- TSM2N7000CTA3
- Taiwan Semiconductor
- 60V N-Channel Enhancement Mode MOSFET
- TSM2N7000CTB0
- Taiwan Semiconductor
- 60V N-Channel Enhancement Mode MOSFET
- TSM2N7000KCT
- Taiwan Semiconductor
- MOSFET 60V 0.2Amp N channel MOSFET
- TSM2N7000KCTA3
- Taiwan Semiconductor Co., Ltd.
- 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
- TSM2N7000KCTB0
- Taiwan Semiconductor Co., Ltd.
- 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92
- TSM2N7000KCT A3
- Taiwan Semiconductor Manufacturing
- TSM2N7000KCT A3
- TSM2N7000KCTA3
- Taiwan Semiconductor Manufacturing
- Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo
- TSM2N7000KCT A3G
- Taiwan Semiconductor Manufacturing
- Trans MOSFET N-CH 60V 0.3A 3-Pin TO-92 Ammo
Product Details Search Results:
Taiwansemi.com/TSM2N7000KCT
{"Factory Pack Quantity":"2000","Vds - Drain-Source Breakdown Voltage":"60 V","Transistor Polarity":"N-Channel","Mounting Style":"Through Hole","Brand":"Taiwan Semiconductor","Id - Continuous Drain Current":"300 mA","Vgs th - Gate-Source Threshold Voltage":"2.5 V","Packaging":"Reel","Product Category":"MOSFET","Rds On - Drain-Source Resistance":"5 Ohms","Package \/ Case":"TO-92-3","Configuration":"Single","RoHS":"Details","Manufacturer":"Taiwan Semiconductor"}...
1507 Bytes - 20:38:41, 05 October 2024
Taiwansemi.com/TSM2N7000KCTA3
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","...
1459 Bytes - 20:38:41, 05 October 2024
Taiwansemi.com/TSM2N7000KCTB0
{"Status":"ACTIVE","Channel Type":"N-CHANNEL","Package Body Material":"PLASTIC\/EPOXY","Mfr Package Description":"ROHS COMPLIANT PACKAGE-3","Terminal Form":"THROUGH-HOLE","Power Dissipation Ambient-Max":"0.4000 W","Package Style":"CYLINDRICAL","Transistor Application":"SWITCHING","Operating Mode":"ENHANCEMENT","Drain Current-Max (ID)":"0.3000 A","Transistor Element Material":"SILICON","FET Technology":"METAL-OXIDE SEMICONDUCTOR","Terminal Position":"BOTTOM","Transistor Type":"GENERAL PURPOSE SMALL SIGNAL","...
1460 Bytes - 20:38:41, 05 October 2024
Tsmc.com/TSM2N7000KCT A3
916 Bytes - 20:38:41, 05 October 2024
Tsmc.com/TSM2N7000KCTA3
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Power Dissipation":"0.4(W)","Continuous Drain Current":"0.3(A)","Mounting":"Through Hole","Drain-Source On-Volt":"60(V)","Packaging":"Ammo Pack","Operating Temperature Classification":"Military","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Rad Hardened":"No","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1541 Bytes - 20:38:41, 05 October 2024
Tsmc.com/TSM2N7000KCT A3G
{"Polarity":"N","Gate-Source Voltage (Max)":"'\u00b120(V)","Channel Mode":"Enhancement","Operating Temperature Classification":"Military","Continuous Drain Current":"0.3(A)","Mounting":"Through Hole","Rad Hardened":"No","Drain-Source On-Volt":"60(V)","Packaging":"Ammo Pack","Power Dissipation":"0.4(W)","Operating Temp Range":"-55C to 150C","Package Type":"TO-92","Type":"Small Signal","Pin Count":"3","Number of Elements":"1"}...
1543 Bytes - 20:38:41, 05 October 2024