SI4431BDY-T1-GE3
MOSFET P-CH 30V 5.7A 8SOIC

From Vishay Siliconix

CategoryDiscrete Semiconductor Products
Current - Continuous Drain (Id) @ 25°C5.7A (Ta)
DatasheetsSI4431BDY
Drain to Source Voltage (Vdss)30V
FET FeatureLogic Level Gate
FET TypeMOSFET P-Channel, Metal Oxide
FamilyFETs - Single
Gate Charge (Qg) @ Vgs20nC @ 5V
Input Capacitance (Ciss) @ Vds-
Mounting TypeSurface Mount
Package / Case8-SOIC (0.154", 3.90mm Width)
PackagingTape & Reel (TR)
Power - Max1.5W
Product Photos8-SOIC
Rds On (Max) @ Id, Vgs30 mOhm @ 7.5A, 10V
SeriesTrenchFET®
Standard Package2,500
Supplier Device Package8-SO
Vgs(th) (Max) @ Id3V @ 250µA

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