23 2N3055 2SD16 NS | TO3 LoS | 100V 50V 10V | 5A 165C | 7OWC 2M 10mn 1A AHH | SAK | BDY74 2N3442 28D17 NS | TOS LOS | 180V 70V TOV [5A 165C | 7OWC 2M 10mn 1A SAK | BDY25 2N3442 28D18 NS | TO3 Los | 200V 85V TOV [5A 165C | 7OWC 2M 10mn 1A AHE | SAK | BDY25 2N3773 2S8D19 NG | TOS Lo4 | 25V OV | 300mMA | 85C 150mWF 500K 20mn ImA AMG | NEC | AC176 2N2430 28020 NG | TOS Load | 25Vv 10V |300mA | 85C 150m WF 500K 25mn ImA AMG] NEC | AC176 2N2430 28021 NG | TOS Lo4 | 26v 10V |300mA | 85C 150m WF 500K - 50mn ImA AMG | NEC | AC176 2N2430 28022 NG | TOS Load | 25V 10V |300mA | 85C 180mWF 500K - 75MA ImA AMG | NEC | AC176 2N2430 28023 NG | TOS Lo4 | 25Vv 1OV |300mA | 85C 150mWF 500K - 106rmn mA AMG | NEC | AC176 2N2430 28D24 NS | TO66 443 | 300V - 2V | 100mA 110C | - 10M - 25mn 50mA RME | - BUX67C 2N3585 28D24 NS | TO66 43 | 300V - av | 150mA 150C | 6500mWC | 4M 24P 250mx 50mA AME | SAN | BUX67B 2N3739 28D25 NG | TOI Lo2 | 25V - 10V | 100mA | 75C 110mWF 500K - 30mn 50mA AMG | - ACI76 2N2430 28D26 NS j TO3 Lo

LT AGE | INFO MAX | MAX [MAX MAX MAX | P TOT MIN | MAX BIAS | USE |MFR| EQUIV | EQUIV Iss 28038 NG | TO7 LO3 30V | 20V {12V 150MA 85C j 250MWF 500K 20MN IMA] ALG [FUJ| AC176 | 2N2430 1 28D41 NS | TO3 L065 BOV | 60V 710V 10A 150C 200WC iM 30MN lay. BOX50 | 2N3773 1 28D43 NG |} TOL Lo2 25V | 25V [lev 50MA 75C 11LOMWF 10M 30MN 50MA] RMG TOS | ACI76 | 2N2430 1 2SD43A NG | TOL Lo2 45v | 45V jl2v 150MA 750 LL OMWF 10M 30MN 50MA| RMG TOS | AC176 2N2430 1 25044 NG | TOL Lo2 25V 12v 50MA 75C SOMWF | 250K 40MN 1MA| ALGITOS | AC176 2N2430 1 28045 NS | TOS LOS 150V | 75V | 6V 5A 165C 50WC 10M 1OMN 1A] RHH [HIJ | BOX50 | 2N3775 1 2SD46 NS | TO3 Los 100V sov | 6v 5A 165C 50WC 10M 10MN 1A] RHH JHIJ] BOXSO | 2N3773 1 25047 NS | TO3 LOS 10ov | 50V | 6V 5A 165C 50WC 10M 1OMN 1A} RHH|HIJ} BOX5O | 2N3773 1 2S8D48 NS TO8 L12 100V | 55V {10V 3A 176C 20WC 500K 20MN 750MA| AHH |FUS : 2N1486 i 28049 NS | TO66 L43 100V | 60V |10V 3A 150C 18we 1M 25MN 1A] AHH |HIJ}| BDY79 | 2N3054 1 25050 NS | TO3

| 300v | 300v} 3v j1A 178C | 30WC 7 20mn | 500mA | RHE | FUJ | BUX67B 2N3585 280160 Ns | Tog | t12 | 100v } gov | BV |1500mA] 175C | 25WwC 20mn | 750mA | AHH | - 2N1486 280161 Ns |[TO3 | tos |120v | sov |} 12v | 10A 175C | 100wC IM 1smn | BA AHH | - BDX50 2N3773 28D162 NG | oss | oBs|2ov | 15v | av |30ma | ssc | 65mwWE | 1M 30mn | 30mA_ | AMG| FUJ | AC127 2N2430 280163 NS | Tos | tos [6ov | 4ov | tov | 10A - 100WC 1M 15mn 1A AHG | SAK | BDY20 2N3085 2sD164 NS |To3 | tos | 100v | ssv } tov | 10a - 100owC 1M 15mn 1A AHG | SAK | BDY20 2N3055 2SD165 NS |To3 | tos | is0v | 7ov | tov |10A - 1oowc 1M - 15mn 1A AHH | SAK | BDX50 2N3773 280166 ns |To3 | Los | 200v | asv | tov | 10a - 100OWC 1M - 15mn 1A AHH | SAK | BDX50 2N3773 2sD167 NG |To1 | L02 }20v | 2ov | 2v |S00ma | ssc | 200mwF | 4M : 50mn 150mA | AMG] FUJ | AC127 2N2430 2sD168 Ns |To3 | Los |sov | eov | ev |10A 178C | 5OWC - - iKmn | 5A RHD | - 2N6385 2sD170 NG |To1 | Loz |25v | 25v | ev |S00ma | gsc | 200mwr | 10M - 60m

3447 2N3448 2N3667 2N3713 2N3714 2N3715 2N3716 2N3716 2N3716 2N3716 3-12 3-12 3-77 3-77 3-12 3-12 3-12 1SI10A-100 2N1487 2N1488 2N1489 2N1490 2N1702 2N3021 MJ16018 2N5878 2N5878 2N5878 2N5878 2N5878 2N3792 3-520 3-74 3-74 3-74 3-74 3-74 3-25 2N3771 2N3772 2N3773 2N3789 2N3790 2N3791 2N3792 2N3771 2N3772 2N3773 2N3792 2N3792 2N3792 2N3792 3-17 3-17 3-21 3-25 3-25 3-25 3-25 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3055A 2N3792 2N3792 2N3792 2N3792 2N3792 3-25 3-25 3-25 3-25 3-25 3-2 3-5 2N3863 2N3864 2N3865 2N3902 2N4002 2N4032 2N4111 2N3055 2N3055A Index and Cross Reference 1-2 2N3442 2N3442 2N3716 2N3716 2N3716 2N3716 2N5882 2N5882 2N3716 2N5882 MJ15001 BUX48A 2N6274 2N6274 2N3716 3-12 3-77 3-497 3-401 3-108 3-108 3-12 Motorola Bipolar Power Transistor Device Data INDEX AND CROSS REFERENCE (continued) Industry Part Number 2N4113 2N4347 2N4348 2N4398 2N4399 2N4901 2N4902 Motorola Nearest Replacement 2N3716 2N3055A 2N5631 2N5035 2N5036 2N5037 2N5038 2N5039 2N5157 2N5190 Page Number

2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. http://onsemi.com Features * High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage * * 16 A NPN POWER TRANSISTORS 140 V, 150 W hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs This is a Pb-Free Device MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector - Emitter Voltage VCEO 140 Vdc Collector - Emitter Voltage VCEX 160 Vdc Collector - Base Voltage VCBO 160 Vdc Emitter - Base Voltage VEBO 7 Vdc Collector Current - Continuous - Peak (Note 2) IC Base Current IB - Continuous - Peak (Note 2) Total Power Dissipation @ TA = 25C

2SD80 NS | TO3 LOS | 30V 20V 10V |6A 165C | 50WC 1M - 40mn 1A AHG | SAK | BDY20 2N3055 28081 NS | TO3 LOS | 60V 40V 10V |6A 165C | 50WC 1M - 40mn 1A AHG | SAK | BDY20 2N3055 28082 NS | TO3 LOS | 100V 60V 10V |6A 165C | 50WC 1M - 40mn 1A AHH | SAK | BDX50 2N3773 28D83 NS | TO3 Los | 150V 75V 10V | 6A 165C | 50WC 1M - 40mn 1A AHH | SAK | BDX50 2N3773 25D84 NS | TOS Los | 200v 85V 10V |6A 165C | 50WC 1M - 40mn 1A AHH | SAK | BDX50 2N3773 28088 NS | TOS Los | 100V 7OV BV [5A 150C | 80WC - 30mn 2A AHH | SOY | BDX50 2N3773 2SD88A NS | TO3 LO5 | 300V 250V 10V {5A 150C | 80WC - 50mn 2A AHE | SOY | BDY28 2N5157 2SD90 NS | TO66 L43 | 30V 20V 10V |3A 150C | 20WC 1M 20mn 1A AHG | SAK | BUY38 2N3054 28091 NS | TO66 L43 | 60V 40V 10V [3A 150C | 20WC 1M 20mn WA AHG | SAK | BUY38 2N3054 2SD92 NS | TO66 L43 | 100V 60V TOV [3A 180C | 20WC 1M 20mn 1A AHH | SAK | BDY72 2N3441 2SD93 NS | TO66 L43. | 150V 75V 10V [3A 180C | 20wc 1M - 20mn 1A AHH | SAK | 8DY72 2N3441 2SD94 NS | T

2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc converters or inverters. 2N6609 *ON Semiconductor Preferred Device 16 AMPERE COMPLEMENTARY POWER TRANSISTORS 140 VOLTS 150 WATTS * High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage * PNP hFE = 15 (Min) @ 8 A, 4 V VCE(sat) = 1.4 V (Max) @ IC = 8 A, IB = 0.8 A For Low Distortion Complementary Designs CASE 1-07 TO-204AA (TO-3) IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIIIIII IIIIIII IIIIIIII IIII IIIIIIIIIIIIII

2N3773, 6609 Complementary Power Transistors The 2N3773 and 2N6609 are power base power transistors designed for high power audio, disk head positioners, linear amplifiers, switching regulators, solenoid drivers and dc to dc converters or inverters. Features: * High Power Dissipation PD = 150W (TC = 25C). * High DC Current Gain and Low Saturation Voltage hFE = 15 - 60 at IC = 8A, VCE = 4V VCE(SAT) = 1.4V (Maximum) at IC = 8A, IB = 0.8A. Pin 1. Base 2. Emitter Collector(Case) NPN PNP 2N3773 2N6609 Dimensions Minimum Maximum A 38.75 39.96 B 19.28 22.23 C 7.96 9.28 D 11.18 12.19 Transistors E 25.20 26.67 140 Volts F 0.92 1.09 150 Watts G 1.38 1.62 H 29.90 30.40 I 16.64 17.30 J 3.88 4.36 K 10.67 11.18 16 Ampere Complementary Silicon Power TO-3 Dimensions : Millimetres Maximum Ratings Characteristic Symbol Rating Collector-Emitter Voltage VCEO(SUS) 140 Collector-Emitter Voltage VCEX Collector-Base Voltage VCBO Emitter-Base Voltage VEBO 7 IC ICM IB IBM 16 30 4.0 15 PD 150 0.85

MRF455 BF167 2SC2215 2N6084 2SD470 MPSU31 2N5322 2N5682 MRF450A 2N3820 2SD873 SVT6759 2N5038 MRF8004 T B A BD911 2N6491 MRF455 D40D11 D41011 S3901MF UA7805KC S3900E BF154 2SK104 2SC606 2N3670 S3901 SG7805K S3900 2SK168 2N3669 2N5179 2SC1494 2N5680 2N5320 2N3773 2N6322 2SC775 2N6488 BD912 2SC2290 MJE3055T MJE2955T ECG334 ECG335 ECG336 ECG337 ECG338 ECG339 ECG340 ECG341 ECG342 ECG343 ECG344 ECG345 ECG346 ECG347 ECG348 ECG349 ECG350 ECG351 ECG352 ECG353 ECG354 ECG355 ECG356 ECG357 ECG359 ECG360 ECG361 ECG362 ECG363 ECG364 ECG365 ECG366 ECG367 ECG368 ECG369 ECG370A ECG371 ECG373 ECG374 ECG375 2SD760 ECG376 ECG377 ECG378 ECG379 BU406 ECG380 ECG381 ECG382 ECG383 ECG384 ECG385 2N3714 ECG386 MRF455A MRF454 MRF454A 2N5847 2N5848 2N5849 2SC1976 MRF237 2SC1971 2SC1972 2SC1946A 2N6083 2N4427 2N5589 2N6080 2N5590 2N6081 2N5591 MRF245 2N6094 2N6095 2N6096 2N6097 2N5641 2N5642 2N5643 MRF629 2N5944 2N5945 2N5946 MRF641 MRF644 MRF646 MRF648 2N5661 LM370H LM371H 2SD669A 2SB649A 2SD478 2SD1138 2SC1569 D44H11 D45H1

4 | 35V - - 50mA 100C | 6OmWF 20M 2P5 40mn ImA RLG | OBS | ASY27 2N1305 2N 1808 NG | TOS lod | 25v 25V 20V | 360mA | &5C 1SOmMWF 6M 24p 60mn 20mA RMS | TIS ASY29 2N1304 2N1809 NS | OBS OBS | 50V s0V 15V | 10A 176C | 250WC 500K - 10mn 10A AHG | OBS | BDY29 2N3773 2N1810 Ns | OBS OBS | 100V 100V 15V | 104 VF5C | 250WC 500K - 10mn 104A AHH | OBS | BDY29 2N3773 2N1811 NS | OBS OBS | 150V 150V SV }10A 175C | 250WC 500K - 10mn 0A AHH | OBS | BDY29 2N3773 2N1812 NS | OBS OBS | 200V 200V 1SV | 10A 175C | 250WC 500K - 10mn 104 AHH | OBS | BUX12 2N6561 2N1813 Ns | OBS OBS | 250V 250V 15V 110A 176C | 250WC 500K - 10mn 10A AHH | OBS | BUX12 2N6561 2N1814 Ns | OBS OBS | 300V 300V 15V |10A 176C | 250WC 500K - 10mn OA AHH | OBS | BUX13 2N6561 2N1815 Ns | OBS OBS | 350V 350V 1sV | 104 175C | 250WC 500K - 10mn IDA AHH | OBS | BUX13 2N6251 2N1816 Ns | 08S OBS | 30V 50V 1SV {154 175C | 250WC 500K - 10mn 158A AHG | OBS | BDY29 2N3773 2N1817 NS | 08 OBS | 100V 100V IBV | 15A T75

2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W Features * * * * * http://onsemi.com Pb-Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs MARKING DIAGRAM 2Nxxxx MEX AYYWW MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector - Emitter Voltage VCEO 140 Vdc Collector - Emitter Voltage VCEX 160 Vdc Collector - Base Voltage VCBO 160 Vdc Emitter - Base Voltage VEBO 7 Vdc Collector Current - Continuous - Pe

2N3773 NPN Power Transistors The 2N3773 is a PowerBaset power transistor designed for high power audio, disk head positioners and other linear applications. This device can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. http://onsemi.com Features * High Safe Operating Area (100% Tested) 150 W @ 100 V * Completely Characterized for Linear Operation * High DC Current Gain and Low Saturation Voltage * * 16 A NPN POWER TRANSISTORS 140 V, 150 W hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs This is a Pb-Free Device MARKING DIAGRAM MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector - Emitter Voltage VCEO 140 Vdc Collector - Emitter Voltage VCEX 160 Vdc Collector - Base Voltage VCBO 160 Vdc Emitter - Base Voltage VEBO 7 Vdc Collector Current - Continuous - Peak (Note 2) IC Base Current IB - Continuous - Peak (Note 2) Total Power Dissipation @ TA = 25C

2N3773, 2N4348, 2N6259 File Number 526 HARRIS SEMICOND SECTOR 27E D MM 4302271 0019824 3 MBHAS V3SB715 High-Voltage, High-Current 1-33-13 Power Transistors TERMINAL DESIGNATIONS Cc Broadly Applicable Devices for ES {FLANGE} Industrial and Commercial Use Features: @ High dissipation capability 120 W (2N4348), 150 W (2N3773), 250 W (2N6259) 9208-27516 @ 5-A specification for Hee. Vac, ANd Vee(Sat) (2N4348) @ 8-A specification for Nee. Vag. ANd Veg(Sat) (2N3773, 2N6259) JEDEC TO-204AA/TO-3 The 2N3773, 2N4348, and 2N6259 are silicon n-p-n transistors intended for a wide variety of medium-voltage, high-current applications. Typical applications for these transistors include power-switching circuits, audio ampli- filers, series and shunt-regulator driver and output stages, dc-to-de converters, inverters, and solenoid (hammer)/relay driver service This device employs the popular JEDEC TO-204AA/T0-3 package MAXIMUM RATINGS, Absolute-Maximum Values: 2N4348 2N37

2N3773*, PNP 2N6609 Preferred Device Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, DC-DC converters or inverters. 16 A COMPLEMENTARY POWER TRANSISTORS 140 V, 150 W Features * * * * * http://onsemi.com Pb-Free Packages are Available** High Safe Operating Area (100% Tested) 150 W @ 100 V Completely Characterized for Linear Operation High DC Current Gain and Low Saturation Voltage hFE = 15 (Min) @ 8.0 A, 4.0 V VCE(sat) = 1.4 V (Max) @ IC = 8.0 A, IB = 0.8 A For Low Distortion Complementary Designs MARKING DIAGRAM 2Nxxxx MEX AYYWW MAXIMUM RATINGS (Note 1) Rating Symbol Value Unit Collector - Emitter Voltage VCEO 140 Vdc Collector - Emitter Voltage VCEX 160 Vdc Collector - Base Voltage VCBO 160 Vdc Emitter - Base Voltage VEBO 7 Vdc Collector Current - Continuous - Pe

2N3773 High power NPN transistor Features High power dissipation Low collector-emitter saturation voltage Description The device is a planar NPN transistor mounted in TO-3 metal case. It is intended for linear amplifiers and inductive switching applications. 1 2 TO-3 Figure 1. Table 1. Internal schematic diagram Device summary Order code Marking Package Packaging 2N3773 2N3773 TO-3 Tray October 2008 Rev 2 1/7 www.st.com 7 Electrical ratings 1 2N3773 Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit VCEO Collector-emitter voltage (IB = 0) 140 V VCEV Collector-emitter voltage (V BE = -1.5 V) 160 V VCBO Collector-base voltage (IE = 0) 160 V VEBO Emitter-base voltage (IC = 0) 7 V Collector current 16 A Collector peak current (tP < 5 ms) 30 A Base current 4 A IBM Base peak current (tP < 1 ms) 15 A Ptot Total dissipation at Tc 25 C 150 W Tstg Storage temperature -65 to 200 C 200 C IC ICM IB Tj Table 3. Symbol Rthj-case 2/7 Parameter Max. opera