ions as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing test frequency. Test Conditions Pout fT Device f Vcc mW Typ* MHz Typ* Package Type MHz Volts Min. Min. 2N3866 400 15 4000 500 TO-39 2N5179 500 10 20 900 TO-72 2N2857 500 10 30 1000 TO-72 2N3839 500 6.0 30 1000 TO-72 MM8009 1680 20 200 1000 TO-39 2N5108 1680 20 300 1200 TO-39 MRF90S 1680 20 500* 2200* TO-46 Low-Noise The low-noise devices listed are produced with carefully controlled rp and fT to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus frequency. (we FREQUENCY MHz Polarity dB 60 100 200 450 1000 2000 1.5 2N5829 2N5829 PNP 2N5031 2N5031 MRF904 NPN 2.0 2N4957 2N4957 2N5829 PNP 2N5032 2N5032 2N5031 MRF904 MRF901 NPN 2.5 2N4958 2N4958 2N4957 2N5829 PNP 2N5032 | 2N5032 2N5032 2N5031 MRE901 NPN 3.0 2N4959 | 2N4959 2N4958 2N4957 2N5829 PNP 2N2857 2N2857 2N5032 2NS032 MRF901 MRF902 NPN 35 2N4959 2N495
2N5179 RCA-2N5179* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely useful in low-noise tuned-amplifier and converter applications at UHF frequencies, and as an oscillator up to 500 MHz. The 2N5179 utilizes a hermetically sealed four- lead JEDEC TO-72 package. All active elements of the transistor are insulated from the case, which may be grounded by means of the fourth lead in applications requiring minimum feedback capaci- tance, shielding of the device, or both. * Formerly Dev. No. TA7319, Meximum Ratings, Absolute-Maximum Valves: COLLECTOR-TO-BASE VOLTAGE, Vcso 20 max. Vv COLLECTOR-TO-EMITTER VOLTAGE, Vcreo 12 max. Vv EMITTER-TO-BASE VOLTAGE, VEso .. 2.5 max. Vv COLLECTOR CURRENT, Ic 50 max. mA TRANSISTOR DISSIPATION, Pr: For operation with heat sink: 300 m At case up to 25C .. above 25C ... For operation at ambient mw temperatures** Derate vat 1.71mW/C temperatures: At ambient up to 25C ... 200 max. temperatures above 25C .
02037 02037 01921 01921 02037 03285 01698 JEDEC 2N4240 2N3771 2N3633 2N2857 2N3739 293478 295174 2N4923 2N2913 2N2405 SD2608 (SEL) 2N4239 2N5262 2N4410 2N5191 2N5294 2N5109 2N4348 40313 2N5070 SE5055 2N4922 2N5088 2N4966 2N5301 2N4912 2N5210 2N2972 2N3563 2N5179 2N3646 A211 2N5192 TIP41 A 2N4401 MPS-A14 2N5551 2N3879 2N2222A 2N4046 M PS3643 MPS-U02 2N5877 2N3772 2N2895 CEN672 MM8066 2N3725 2N5963 2N4237 2K2432A MPS Al 2 2N3771 2N5189 MPS-A42 2N6258 2N6259 M8601 MJE800 MPS-A18 MJE182 2N5429 M MT3960A MJ3772 2N3054 BFR90 TIP-5A TIP-33 2N5428 2N5943 2N4233A 2N6055 2N1701 40852 HJ3000 AD814 BF258 Part Num. 1854-0623 1854-0624 1854-0625 1854-0626 1854-0628 1854-0632 1854-0633 1854-0634 1854-0635 1854-0637 1854-0639 1854-0640 1854-0642 1854-0643 1854-0644 1854-0646 1854-0647 1854-0648 1854-0653 1854-0654 1854-0659 1854-0662 1854-0663 1854-0665 1854-0667 1854-0669 1854-0670 1854-0671 1854-0679 1854-0682 1854-0687 1854-0690 1854-0691 1854-0692 1854-0697 1854-0698 1854-0700 1854-0701 1854-0705 1854-0707 1
R9O, MRFS01, MRF904 3 2N3948, 2N4427, MRF207 13 2N6604, BFR91, MRF911, MRF914 4 2N5109, 2N5943 14 BFR96, MRF961, MRF962, MRF965 5 2N5583, PNP 15 BFW92A 6 2N5836, 2N5837 16 MRF559 7 MRF511, MRFS17, MRF525 17 MRF580. MRF581, MRF586, MRF587 8 2N2857. 2N3839, 2N5179, 18 MRF571, MRFS72 MRF536, MRF534, MM4049, PNPRF SMALL-SIGNAL TRANSISTORS (continued) UHF and Microwave Oscillators The transistors listed below are for UHF and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power. Test Conditions Pout fr f Vec mW MHz Device Type MHz Volts Min Typ Package 2N5179 500 10 20 1800 TO-72 2N2857 500 10 30 1800 TO-72 2N3839 500 6.0 30 1800 TO-72 MM8009 1680 20 200 1400 TO-39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 *Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled ry and fT to optimize device noise performance. Devices li
R9O, MRFS01, MRF904 3 2N3948, 2N4427, MRF207 13 2N6604, BFR91, MRF911, MRF914 4 2N5109, 2N5943 14 BFR96, MRF961, MRF962, MRF965 5 2N5583, PNP 15 BFW92A 6 2N5836, 2N5837 16 MRF559 7 MRF511, MRFS17, MRF525 17 MRF580. MRF581, MRF586, MRF587 8 2N2857. 2N3839, 2N5179, 18 MRF571, MRFS72 MRF536, MRF534, MM4049, PNP RF SMALL-SIGNAL TRANSISTORS (continued) UHF and Microwave Oscillators The transistors listed below are for UHF and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power. Test Conditions Pout fr f Vec mW MHz Device Type MHz Volts Min Typ Package 2N5179 500 10 20 1800 TO-72 2N2857 500 10 30 1800 TO-72 2N3839 500 6.0 30 1800 TO-72 MM8009 1680 20 200 1400 TO-39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 *Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled ry and fT to optimize device noise performance. Devices l
R9O, MRFS01, MRF904 3 2N3948, 2N4427, MRF207 13 2N6604, BFR91, MRF911, MRF914 4 2N5109, 2N5943 14 BFR96, MRF961, MRF962, MRF965 5 2N5583, PNP 15 BFW92A 6 2N5836, 2N5837 16 MRF559 7 MRF511, MRFS17, MRF525 17 MRF580. MRF581, MRF586, MRF587 8 2N2857. 2N3839, 2N5179, 18 MRF571, MRFS72 MRF536, MRF534, MM4049, PNPRF SMALL-SIGNAL TRANSISTORS (continued) UHF and Microwave Oscillators The transistors listed below are for UHF and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power. Test Conditions Pout fr f Vec mW MHz Device Type MHz Volts Min Typ Package 2N5179 500 10 20 1800 TO-72 2N2857 500 10 30 1800 TO-72 2N3839 500 6.0 30 1800 TO-72 MM8009 1680 20 200 1400 TO-39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 *Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled ry and fT to optimize device noise performance. Devices li
29 PNP 2N5032 2N5032 2N5031 MRF904 MRF901 NPN 2.5 2N4958 2N4958 2N4957 2N5829 PNP 2N5032 | 2N5032 2N5032 2N5031 MRE901 NPN 3.0 2N4959 | 2N4959 2N4958 2N4957 2N5829 PNP 2N2857 2N2857 2N5032 2NS032 MRF901 MRF902 NPN 35 2N4959 2N4959 2N4959 2N4958 2N4957 PNP 2N5179 2N5179 2N2857 2N5032 2N5031 MRF902 NPN 4.0 2N4959 2N4959 2N4959 2N4959 2N4958 PNP 2N5179 2N5179 2N5179 2N2857 2N5031 MRF9114 NPN 4.5 2N4959 2N4959 2N4959 2N4959 2N4959 PNP L 2N5179 2N5179 2N5179 2N2857 2N5032 NPN J General-Purpose Amplitier The behavious of fT as a function of I is critical in most Class A amplifier applications. The devices listed in the matrix form below are classified according to fy versus Ic. fT COLLECTOR CURRENT mA GHz Polarity Min. 2.0 5.0 10 20 50 100 200 5.0 BFR9O BFR91 BFR9G NPN 4.5 MM4049 PNP BFROO BFRQ1 BFRSOG BFROS NPN 4.0 mM4049} MM4049 PNP BFR9O BFRQ1 NPN 35 MM4049| MM4049| MM4049 PNP BFR90 BFRSO BFRQ1 BFRQ1 NPN 2.5 M
R9O, MRFS01, MRF904 3 2N3948, 2N4427, MRF207 13 2N6604, BFR91, MRF911, MRF914 4 2N5109, 2N5943 14 BFR96, MRF961, MRF962, MRF965 5 2N5583, PNP 15 BFW92A 6 2N5836, 2N5837 16 MRF559 7 MRF511, MRFS17, MRF525 17 MRF580. MRF581, MRF586, MRF587 8 2N2857. 2N3839, 2N5179, 18 MRF571, MRFS72 MRF536, MRF534, MM4049, PNPRF SMALL-SIGNAL TRANSISTORS (continued) UHF and Microwave Oscillators The transistors listed below are for UHF and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power. Test Conditions Pout fr f Vec mW MHz Device Type MHz Volts Min Typ Package 2N5179 500 10 20 1800 TO-72 2N2857 500 10 30 1800 TO-72 2N3839 500 6.0 30 1800 TO-72 MM8009 1680 20 200 1400 TO-39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 *Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled ry and fT to optimize device noise performance. Devices li
ions as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing test frequency. Test Conditions Pout fT Device f Vcc mW Typ* MHz Typ* Package Type MHz Volts Min. Min. 2N3866 400 15 4000 500 TO-39 2N5179 500 10 20 900 TO-72 2N2857 500 10 30 1000 TO-72 2N3839 500 6.0 30 1000 TO-72 MM8009 1680 20 200 1000 TO-39 2N5108 1680 20 300 1200 TO-39 MRF90S 1680 20 500* 2200* TO-46 Low-Noise The low-noise devices listed are produced with carefully controlled rp and fT to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus frequency. (we FREQUENCY MHz Polarity dB 60 100 200 450 1000 2000 1.5 2N5829 2N5829 PNP 2N5031 2N5031 MRF904 NPN 2.0 2N4957 2N4957 2N5829 PNP 2N5032 2N5032 2N5031 MRF904 MRF901 NPN 2.5 2N4958 2N4958 2N4957 2N5829 PNP 2N5032 | 2N5032 2N5032 2N5031 MRE901 NPN 3.0 2N4959 | 2N4959 2N4958 2N4957 2N5829 PNP 2N2857 2N2857 2N5032 2NS032 MRF901 MRF902 NPN 35 2N4959 2N495
2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * Silicon NPN, TO-72 packaged VHF/UHF Transistor * Low Noise, NF = 4.5 dB (max) @ 200 MHz * High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 * 1 Characterized with S-Parameters 3 4 1. Emitter 2. Base 3. Collector 4. Case TO-72 DESCRIPTION: Silicon NPN transistor, designed for VHF and UHF equipment. Ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C) Symbol VCEO Parameter Collector-Emitter Voltage Value 12 Unit Vdc VCBO VEBO Collector-Base Voltage 20 Vdc Emitter-Base Voltage 2.5 Vdc IC Collector Current 50 mA 300 1.71 mWatts mW/ C Thermal Data PD Total Device Dissipation @ TA = 25C Derate above 25C PRELIMINARY 2N5179.PDF 3-10-99 2N5179 ELECTRICAL SPECIFICATIONS (Tcase = 25C) STATIC (off) Symbol VCEO(sus) BVCBO BVEBO ICBO Test Conditions Value Min. Typ. Max. Unit Collector-Emitter Sustaining Voltage (IC = 3.0 mAdc, IB = 0) 12 - - Vdc Collect
e for UHF and microwave oscillator applications as initial signal sources or as output stages of limited range transmitters. Devices are listed in order of increasing output power. Test Conditions Pout fr f Vec mW MHz Device Type MHz Volts Min Typ Package 2N5179 500 10 20 1800 TO-72 2N2857 500 10 30 1800 TO-72 2N3839 500 6.0 30 1800 TO-72 MM8009 1680 20 200 1400 TO-39 2N5108 1680 20 300 1400 TO-39 2N3866 400 15 1000 1000 TO-39 *Typical Low-Noise Transistors The low-noise devices listed are produced with carefully controlled ry and fT to optimize device noise performance. Devices listed in the matrix are classified according to noise figure performance versus frequency. NF Frequency MHz dB 60 100 200 450 1000 2000 Polarity 1.5 2N5829 2N5829 PNP 2N5031 2N5031 MRF904 MRF571 MRF572/MRF2369 NPN 2.0 2N4957 2N4957 2N5829 PNP 2N5031 MRF904 MRF901 NPN 2.5 2N4958 2N4958 2N4957 2N5829 PNP 2N5032 2N5031 MRF901 MRF572 NPN 2N6603 NPN 3.0 2N4959 2N4959 2N4958 2N4957 2N5829 PNP 2N2857 2N2857 MRF901 2N6603 NPN 2N
2N5179 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio... 1 of 2 http://www.americanmicrosemi.com/information/spec/?ss_pn=2N5179 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5179 Availability Online Store Diodes Buy 2N5179 at our online store! Transistors Integrated Circuits Special Offers: FREE UPS Ground Shipping on Orders above $150.00 Lanuage Translator: 2N5179 Information Optoelectronics Did you Know... Thyristors Category Transistors Products AMS has access to a Class UHF/Microwave Transistors network of more than Search for Parts Type Bipolar NPN Request a Quote Test Houses components? Combine that 2N5179 Specifications Information Spec Sheets Military/High-Rel : N Testimonials Store Policies Contact Us rigorous quality control standards, and you'll find V(BR)CEO (V) : 12 FAQs Company with our top-notch customer service and Tutorials Shipping 230,645,000 electronic V(BR)CBO (
29 PNP 2N5032 2N5032 2N5031 MRF904 MRF901 NPN 2.5 2N4958 2N4958 2N4957 2N5829 PNP 2N5032 | 2N5032 2N5032 2N5031 MRE901 NPN 3.0 2N4959 | 2N4959 2N4958 2N4957 2N5829 PNP 2N2857 2N2857 2N5032 2NS032 MRF901 MRF902 NPN 35 2N4959 2N4959 2N4959 2N4958 2N4957 PNP 2N5179 2N5179 2N2857 2N5032 2N5031 MRF902 NPN 4.0 2N4959 2N4959 2N4959 2N4959 2N4958 PNP 2N5179 2N5179 2N5179 2N2857 2N5031 MRF9114 NPN 4.5 2N4959 2N4959 2N4959 2N4959 2N4959 PNP L 2N5179 2N5179 2N5179 2N2857 2N5032 NPN J General-Purpose Amplitier The behavious of fT as a function of I is critical in most Class A amplifier applications. The devices listed in the matrix form below are classified according to fy versus Ic. fT COLLECTOR CURRENT mA GHz Polarity Min. 2.0 5.0 10 20 50 100 200 5.0 BFR9O BFR91 BFR9G NPN 4.5 MM4049 PNP BFROO BFRQ1 BFRSOG BFROS NPN 4.0 mM4049} MM4049 PNP BFR9O BFRQ1 NPN 35 MM4049| MM4049| MM4049 PNP BFR90 BFRSO BFRQ1 BFRQ1 NPN 2.5 M
2N5179 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features * Silicon NPN, TO-72 packaged VHF/UHF Transistor * Low Noise, NF = 4.5 dB (max) @ 200 MHz * High Current-Gain-Bandwidth Product 1.4 Ghz (typ) @ 10 mAdc 2 1 3 4 * 1. Emitter 2. Base 3. Collector 4. Case TO-72 Characterized with S-Parameters DESCRIPTION: The 2N5179 is a Silicon NPN transistor, designed for VHF and UHF equipment. It is ideal for pre-driver, low noise amplifier, and oscillator applications. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 25 C) Symbol Parameter Value Unit VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 12 20 2.5 50 Vdc Vdc Vdc mA 300 1.71 mW mW/ C Thermal Data PD Total Device Dissipation @ TA = 25C Derate above 25C Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. 2N5179 ELECTRICAL SPECIFIC
Table 1. - 13 - Table 1. Speed of Light Apparatus Parts List. P/N Q1 Q2 Q3 Q4 D1 D2 D3 D4 D5 D6 D7 D8 C1 C2 C3 C4 C5 C6 C7 C8 R1 R2 R3 R4 R5 R6 R7 R8 R9 R10 R11 R12 R13 R14 R15 R16 U1 U2 U3 U4 H1 H2 H3 H4 H5 H6 H7 H8 H9 H10 H11 H12 H13 F1 F2 Value 2N2369 2N5179 2N5179 2N5179 1N914/1N4148 IF-E96E 1N914/1N4148 1N914/1N4148 1N914/1N4148 1N914/1N4148 IF-D91 1 f 50 V 10 f 16 V 150 pf 150 pf .047 f 150 pf 150 pf .047 f 1k 2.2 k 270 ohms 2.2 k 47 ohms 2.2 k 2.2 k 10 k 47 ohms 220 ohms 10 k 22 ohms 1k 4.7 k 2.2 k 10 k 7805 TLC555CP 74LS221 DB101 Description NPN switching transistor NPN wide bandwidth transistor NPN wide bandwidth transistor NPN wide bandwidth transistor Yellow LED Switching diode Fiber optic red LED Switching diode Switching diode Switching diode Switching diode Fiber optic photo diode Electrolytic capacitor Electrolytic capacitor Axial ceramic capacitor Axial ceramic capacitor Axial ceramic capacitor Axial ceramic capacitor Axial ceramic capacitor Axial cerami