BCW70LT1 General Purpose Transistors PNP Silicon http://onsemi.com MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Collector Current -- Continuous COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg - 55 to +150 C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 DEVICE MARKING 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina H2x x = Monthly Date Code ORDERING INFORMATION Device BCW70LT1 Package Shipping SOT-23 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components I
BCW70LT1 General Purpose Transistors PNP Silicon http://onsemi.com Features * Pb-Free Package is Available COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Symbol Max Unit PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 3 SOT-23 (TO-236AB) CASE 318 STYLE 6 1 2 MARKING DIAGRAM H2 M G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Con
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BCW70LT1 PNP Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Collector Current -- Continuous DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg - 55 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO -45 -- Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, VEB = 0) V(BR)CES -50 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(B
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses a
BCW70LT1 General Purpose Transistors PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Collector Current -- Continuous 3 1 DEVICE MARKING 2 BCW69LT1 = H1; BCW70LT1 = H2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C COLLECTOR 3 1 BASE 2 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO -45 -- Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, VEB = 0) V(BR)CES -50 -- Vdc Emitter-Base Breakdown Voltage (IE
BCW70LT1 General Purpose Transistors PNP Silicon w This device is available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices. Please see our website at www.onsemi.com for specific Pb-free orderable part numbers, or contact your local ON Semiconductor sales office or representative. http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Collector Current -- Continuous 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 3 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 DEVICE MARKING H2x 1. FR-5 = 1.0 x 0.75 x 0.062
BCW70LT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Produc SOD-123+ PACKAGE Package outline Features * Batch process design, excellent power dissipation offers reverse leakage current and thermal resistance. PNPbetter Silicon SOD-123H * Low profile surface mounted application in order to Featrues optimize board space. We declare that the material of product loss, high efficiency. * Low power compliance with RoHS requirements. capability, low forward voltage drop. * High current Pb-Free package is available surge capability. * High 1 overvoltage protection. * Guardring RoHS product for for packing code suffix "G" BASE * Ultra Halogen freehigh-speed product for switching. packing code suffix "H" * Silicon epitaxial planar chip, metal silicon junction. * Lead-free parts meet environmental standards of MIL-STD-19500 /228 * RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS Mechanical dat
BCW70LT1 3 COLLECTOR 1 BASE 3 2 EMITTER 1 2 MAXIMUM RATINGS CASE 318-08, STYLE 6 Rating Symbol Value Unit Collector-Emitter Voltage V CEO - 45 Vdc Emitter-Base Voltage V - 5.0 Vdc - 100 mAdc Collector Current -- Continuous EBO IC SOT-23 (TO-236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board, (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C 417 -55 to +150 C/W C RJA TJ , Tstg DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2, ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted.) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0 ) V (BR)CEO - 45 -- Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, V EB = 0 ) V (BR)CES - 50 -- Vdc Emitter-Base Breakdown Voltage (I E= -10 Ad
ature RJA 3 1 2 PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C SOT-23 (TO-236AB) CASE 318 STYLE 6 DEVICE MARKING 1. FR-5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina H2x x = Monthly Date Code ORDERING INFORMATION Device BCW70LT1 Package Shipping SOT-23 3000 Units/Reel Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 1999 December, 1999 - Rev. 0 464 Publication Order Number: BCW70LT1/D BCW70LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO -45 -- Vdc Collector-Emitter Breakdown Voltage (IC = -100 Adc, VEB = 0) V(BR)CES -50 -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 -- Vdc -- -- -100 -10 nAdc Adc hFE 215 500 -- Collector-Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) VCE(sat) -- -0.3 Vdc Base-Emitter On
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
VCE = -10 Vdc, f = 100 MHz) Noise Figure (IC= -0.2 mAdc, VCE = -5.0 Vdc, RS = 1.0 k, f = 1.0 kHz, BW = 200 Hz) Motorola Small-Signal Transistors, FETs and Diodes Device Data 2-201 MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors BCW69LT1 BCW70LT1 PNP Silicon COLLECTOR 3 1 BASE 3 1 2 EMITTER 2 CASE 318 - 08, STYLE 6 SOT- 23 (TO - 236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc Collector Current -- Continuous DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 225 mW 1.8 mW/C RJA 556 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg - 55 to +150 C ELECTRICAL CHARACTERISTICS (TA = 25C unless
pacitance Noise Figure Ccbo NF 2.0 6.0 pF Vcb= -10V f=1.0MHz 10 dB Vce=-5VIc=-200uA RG=2k f=1MHz f=200MHz 2 Note1:Device mounted on ceramic substrate 0.7mm2.5mm area. Note2: Current gain subgroup "c" is not available for BC856. DEVICE MARKING: BCW69LT1=H1 BCW70LT1=H2 BCW69/70LT1 SEMICONDUCTOR TECHNICAL DATA Shandong Yiguang Electronic Joint stock Co., Ltd PNP EPITAXIAL SILICON TRANSISTOR TYPICAL NOISE CHARACTERISTICS (V CE = - 5.0 Vdc, T A = 25C) 10 10.0 BANDWIDTH = 1.0 Hz R ~ ~0 30A 100A 300A 1.0mA 1.0 10 20 50 100 200 S IC=1.0mA 3.0 5.0 2.0 8 5.0 IC=10 A 3.0 BANDWIDTH = 1.0 Hz R ~ ~ 7.0 S I n , NOISE CURRENT (pA) e n , NOISE VOLTAGE (nV) 7.0 500 1.0k 2.0k 5.0k 2.0 300A 1.0 0.7 100A 0.5 0.3 30A 0.2 10A 0.1 10 10k 20 50 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) f, FREQUENCY (Hz) Figure 1. Noise Voltage Figure 2. Noise Current 5.0k 10k NOISE FIGURE CONTOURS (V CE = - 5.0 Vdc, T A = 25C) 1.0M 1.0M BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 2.0dB 500 3.0 dB 200 100 10 5.0 dB
mercial Components 11 Price Book, October 9, 2004 QUICK REFERENCE COMPONENTS DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE BAL99LT1G BAS19LT1G BAT54CTT1 BAT54CXV3T1 BCW65ALT1G BCW68GLT1G BCW70LT1G BCW72LT1G BCX17LT1G BCX19LT1G BC369ZL1G BC547BZL1G BC548BZL1G BC557BZL1G BC557CZL1G BC639-16ZL1G BC807-16LT3G BC846BLT3G BC846BM3T5G BC847ALT1G BC847AWT1G BC848ALT1G BC849CLT1G BC850CLT1G BC856ALT1G BC856BLT3G BC856BM3T5G BC857ALT1G BC857CDW1T1G BC857CLT1G BC858CLT1G BC858CLT3G BC859CLT1G BD436TG BD679AG BFR30LT1G BF422G BF720T1G BF721T1G BSP16T1G BSP52T1G BS107AG BUH150G BZG03C15G BZG03C150G BZX84B6V2LT1G BZX84B6V8LT1G BZX84C11LT1G BZX84C2V4LT1G BZX84C2V7LT1G BZX84C20LT1G BZX84C22LT1G BZX84C3V6LT1G BZX84C33LT1G BZX84C39LT1G BZX84C4V3LT1G BZX84C4V3LT3G BZX84C43LT1G BZX84C68LT1G CS51021AEDR16G CS51033YDR8G CS5124XDR8G CS51411ED8G CS51411GDR8G CS51413EDR8G CS51413GDR8G CS5171GDR8G CS5173EDR8G CS8182YDF8G DAN222G DA121TT1G DTA114EM3T5G DT