BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236AB) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses a
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
BCW70LT1G General Purpose Transistor PNP Silicon Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS www.onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO -45 Vdc Emitter-Base Voltage VEBO -5.0 Vdc IC -100 mAdc 2 EMITTER Symbol Max Unit 3 PD 225 mW 1.8 mW/C RqJA 556 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 1 BASE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 1 2 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
mercial Components 11 Price Book, October 9, 2004 QUICK REFERENCE COMPONENTS DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE New Listings (Cont) DEVICE BAL99LT1G BAS19LT1G BAT54CTT1 BAT54CXV3T1 BCW65ALT1G BCW68GLT1G BCW70LT1G BCW72LT1G BCX17LT1G BCX19LT1G BC369ZL1G BC547BZL1G BC548BZL1G BC557BZL1G BC557CZL1G BC639-16ZL1G BC807-16LT3G BC846BLT3G BC846BM3T5G BC847ALT1G BC847AWT1G BC848ALT1G BC849CLT1G BC850CLT1G BC856ALT1G BC856BLT3G BC856BM3T5G BC857ALT1G BC857CDW1T1G BC857CLT1G BC858CLT1G BC858CLT3G BC859CLT1G BD436TG BD679AG BFR30LT1G BF422G BF720T1G BF721T1G BSP16T1G BSP52T1G BS107AG BUH150G BZG03C15G BZG03C150G BZX84B6V2LT1G BZX84B6V8LT1G BZX84C11LT1G BZX84C2V4LT1G BZX84C2V7LT1G BZX84C20LT1G BZX84C22LT1G BZX84C3V6LT1G BZX84C33LT1G BZX84C39LT1G BZX84C4V3LT1G BZX84C4V3LT3G BZX84C43LT1G BZX84C68LT1G CS51021AEDR16G CS51033YDR8G CS5124XDR8G CS51411ED8G CS51411GDR8G CS51413EDR8G CS51413GDR8G CS5171GDR8G CS5173EDR8G CS8182YDF8G DAN222G DA121TT1G DTA114EM3T5G DT
BC817-25LT1G LBC817-40LT1G LBC846ALT1G LBC846BLT1G LBC847ALT1G LBC847BLT1G LBC847CLT1G LBC848ALT1G LBC848BLT1G LBC848CLT1G LBC850ALT1G LBC850BLT1G LBC856ALT1G LBC856BLT1G LBC857ALT1G LBC857BLT1G LBC857CLT1G LBC858ALT1G LBC858BLT1G LBC858CLT1G LBCW65ALT1G LBCW70LT1G LBCX19LT1G LMBT2222ALT1G LMBT2369ALT1G LMBT2369LT1G LBCW65ALT1G LBCW70LT1G LBCX19LT1G LMBT2222ALT1G LMBT2369ALT1G LMBT2369LT1G LMBT2907ALT1G LMBT3904LT1G LMBT3906LT1G 0 G LMBT4401LT1G LMBT4403LT1G LMBT5087LT1G LMBT5401LT1G LMBT5551LT1G LMBT6427LT1G LMBT6429LT1G LMBT6517LT1G LMBT6520LT1G LMBTA05LT1G LMBTA06LT1G LMBTA13LT1G LMBTA14LT1G LMBTA42LT1G LMBTA43LT1G LMBTA55LT1G LMBTA56LT1G LMBTA64LT1G LMBTA70LT1G LMBTA92LT1G LMBTA94LT1G LSBC847BLT1G SSBC847BLT1G CH3904LT1G MMBT3904HLT1G CH3906LT1G MMBT3906HLT1G L9013PLT1G L9015HRLT1G LBCW68GLT1G Copper wire conversion PCN Page 2 of 3 LESHAN RADIO COMPANY, LTD. L2SC2411KRLT1G L2SC2412KQLT1G L2SC2412KRLT1G L2SC2412KSLT1G L2SC3906KALT1G L2SD1781KRLT1G L2SD2114KVLT1G L2SD2114KWLT1G L90
180 - - - - 150 200 200 650 PNP NPN NPN PNP PNP NPN NPN NPN PNP PNP PNP 3 3 1 3 1 NPN 2 2 1 PNP 2 114 Package Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 4.1 SOT-23/ TO-236AB Surface Mount General Purpose Transistors Device LBCW65ALT1G LBCW68GLT1G LBCW70LT1G LBCX19LT1G LMBT918LT1G LMBT5087LT1G LMBT5401LT1G LBC807-16LT1G LBC807-25LT1G LBC807-40LT1G LBC817-16LT1G LBC817-25LT1G LBC817-40LT1G LBC846ALT1G LBC846BLT1G LBC847ALT1G LBC847BLT1G LBC847CLT1G LBC848ALT1G LBC848BLT1G LBC848CLT1G LBC856ALT1G LBC856BLT1G LBC857ALT1G LBC857BLT1G LBC857CLT1G LBC858ALT1G LBC858BLT1G LBC858CLT1G LMBT5551LT1G Device IC Marking (mA) EA DG H2 U1 M3B 2Q 2L 5A1 5B1 5C1 6A 6B 6C 1A 1B 1E 1F 1G 1J 1K 1L 3A 3B 3E 3F 3G 3J 3K 3L G1 800 800 100 500 50 50 500 500 500 500 500 500 500 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 600 VCEO (V) 32 45 45 45 15 50 150 45 45 45 45 45 45 65 65 45 45 45 30 30 30 65 65 45 45 45 30 30 30 140 hFE IC /VCE Min/Max (mA)/(Volts) 75/220 10/1.0 120/400 10/1.0 215/500 2
0.4 x 0.3 x 0.024 in. 99.5% alumina 1 H2 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device BCW70LT1 BCW70LT1G Package Shipping SOT-23 3000 / Tape & Reel SOT-23 (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 May, 2006 - Rev. 2 1 Publication Order Number: BCW70LT1/D BCW70LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max Unit -45 - Vdc -50 - Vdc -5.0 - Vdc - - -100 -10 nAdc mAdc 215 500 - - -0.3 Vdc -0.6 -0.75 Vdc - 7.0 pF - 10 dB OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = -2.0 mAdc, IB = 0) V(BR)CEO Co