FDMS86300DC N-Channel Dual CoolTM Power Trench(R) MOSFET 80 V, 60 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top S S Pin 1 S Bottom Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous (Package limite
FDMS86300DC N-Channel Dual CoolTM Power Trench(R) MOSFET 80 V, 76 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top S S Pin 1 S Bottom Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 80 VGS Gate to Source Voltage ID Drain Current -Continuous T
FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET 80 V, 110 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top Dual Cool TM S S Pin 1 S Bottom 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous TC = 2
FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced POWERTRENCH(R) process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL(R) package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. ELECTRICAL CONNECTION Features * * * * * * DUAL COOL Top Side Cooling PQFN package Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant S D S D S D G D N-Channel MOSFET D D D D Pin 1 G S S Top Typical Applications S Pin 1 Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG * Synchronous Rectifier for DC/DC Converters * Telecom Secondary Side Rectification * High End Server/Workstation Vcore Low Side MARKING DIAGRA
FDMS86300DC N-Channel Dual CoolTM Power Trench(R) MOSFET 80 V, 76 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced Power Trench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side D D D S Pin 1 S D S D S D G D D G Top S S Pin 1 S Bottom Power 56 MOSFET Maximum Ratings TA = 25 C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 80 VGS Gate to Source Voltage ID Drain Current -Continuous T
ges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMS86300DC N-Channel Dual CoolTM 56 PowerTrench(R) MOSFET 80 V, 110 A, 3.1 m Features Dual CoolTM General Description Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 m at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Work
FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced POWERTRENCH(R) process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL(R) package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. ELECTRICAL CONNECTION Features * * * * * * DUAL COOL Top Side Cooling PQFN package Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A High performance technology for extremely low rDS(on) 100% UIL Tested RoHS Compliant S D S D S D G D N-Channel MOSFET D D D D Pin 1 G S S Top Typical Applications S Pin 1 Bottom DFN8 5.1x6.15 (Dual Cool 56) CASE 506EG * Synchronous Rectifier for DC/DC Converters * Telecom Secondary Side Rectification * High End Server/Workstation Vcore Low Side MARKING DIAGRA
F095 SSOT-3 SSOT-3 512-FDN340P_F095 Power-33 512-FDMC610P SSOT-3 512-FDN306P_F095 Dual N-Channel SOIC-8 512-FDS8949 Power 33 512-FDMC8032L SSOT-6 512-NDC7002N SC-70 512-2N7002DW SOT-523F 512-2N7002V SOIC-8 512-FDS9945 Power-56 512-FDMS86500DC Power-56 512-FDMS86300DC SSOT-6 512-FDC3601N SSOT-6 512-FDC8602 512-FDS89161 SOIC-8 SOIC-8 512-FDS89141 SOIC-8 512-FDS3992 Power 3.3x5 512-FDMD82100 512-FDMS86101DC Power-56 Power 3.3x5 512-FDMD84100 Power-56 512-FDMD86100 Power-56 512-FDMD85100 Power-88 512-FDMT800152DC Power-88 512-FDMT800100DC Quad N-Channel MLP 4.5x5 512-FDMQ86530L Dual P-Channel SSOT-6 512-NDC7003P SOIC-8 512-NDS9948 512-FDS9958 TO-247 Complementary N & P Channel SOIC-8 512-FDS4897C 512-FDD8424H TO-252 VDS (V) RDS Qg ID (on) (nC) (A) (m) PD (W) Price Each 10 100 3.21 2.92 2.63 2.39 1.53 1.53 .96 .67 .80 .60 .92 3.05 2.16 1.04 .92 1.70 2.01 1.96 1.29 1.13 1.52 .92 .82 1.64 .59 .90 2.14 2.12 2.03 1.24 1.44 .91 .66 1.34 .85 .87 1.04 .67 .80 1.00 .77 .64 .99 .61 .51 .49 .48 .24 1.10 1.07 1.