HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. TO-126 Absolute Maximum Ratings (TA=25C) Symbol Parametor Value Unit VCBO Collector-Base Voltage (IE=0) -45 V VCES Collector-Emitter Voltage (VBE=0) -45 V VCEO Collector-Emitter Voltage (IB=0) -45 V VEBO Emitter-Base Voltage (IC=0) -5 V IC Collector Current -4 A ICM Collector Peak Current (t10ms) -7 A IB Base Current -1 A Total Dissipation at TC=25C 25 W Total Dissipation at TA=25C 1.3 W -55 to 150 C 150 C PD Tstg Tj Storage Temperature Max. Operating Junction Temperature Thermal Data Rthj-case Thermal Resistance Junction-case (Max.) 6 C/W Rthj-amb Thermal Resistance Junction-ambient (Max.) 96 C/W Electrical Characteristics (TA=25C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off
HBD438T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD438T is silison epitaxial-base PNP power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary NPN type is HBD437T. TO-126 Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t10ms) Base Current Tc=25C Total Dissipation at Ta=25C Storage Temperature Max. Operating Junction Temperature Value -45 -45 -45 -5 -4 -7 -1 25 1.3 -55 to 150 150 Unit V V V V A A A W W C C Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. C/W C/W 6 96 Electrical Characteristics (Ta=25C, unless otherwise specified) Symbol ICBO ICES IEBO *VCEO(sus) *VCE(sat) Parameter Collector Cut-off Current (IE=0) Collector Cut-o
ONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. TO-126 Absolute Maximum Ratings (Ta=25C) Symbol VCBO VCES VCEO VEBO IC ICM IB PD Tstg Tj Parametor Collector-Base Voltage (IE=0) Collector-Emitter Voltage (VBE=0) Collector-Emitter Voltage (IB=0) Emitter-Base Voltage (IC=0) Collector Current Collector Peak Current (t10ms) Base Current Tc=25C Total Dissipation at Ta=25C Storage Temperature Max. Operating Junction Temperature Value 45 45 45 5 4 7 1 25 1.5 -55 to 150 150 Unit V V V V A A A W W C C Thermal Data Rthj-case Rthj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. C/W C/W 5 83 Electrical Characteristics (Ta=25C, unless otherwise specified) Symbol ICBO ICES IEBO *VCEO(sus) *VCE(sat) Parameter Collector Cut-off Current (IE=0) Collector Cut-off Curre
ONICS CORP. HBD437T COMPLEMENTARY SILICON POWER TRANSISTORS Description The HBD437T is silison epitaxial-base NPN power transistor in TO-126 plastic package, intented for use in medium power linear and switching applications. The complementary PNP type is HBD438T. TO-126 Absolute Maximum Ratings (TA=25C) Symbol Parametor Value Unit VCBO Collector-Base Voltage (IE=0) 45 V VCES Collector-Emitter Voltage (VBE=0) 45 V VCEO Collector-Emitter Voltage (IB=0) 45 V VEBO Emitter-Base Voltage (IC=0) 5 V IC Collector Current 4 A ICM Collector Peak Current (t10ms) 7 A IB Base Current 1 A Total Dissipation at TC=25C 25 W Total Dissipation at TA=25C 1.5 W -55 to 150 C 150 C PD Tstg Tj Storage Temperature Max. Operating Junction Temperature Thermal Data Rthj-case Thermal Resistance Junction-case (Max.) 5 C/W Rthj-amb Thermal Resistance Junction-ambient (Max.) 83 C/W Electrical Characteristics (TA=25C, unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current