IRF6894MTRPBF HEXFET(R) Power MOSFET plus Schottky Diode RoHs Compliant Containing No Lead and Bromide Integrated Monolithic Schottky Diode Low Profile (<0.7 mm) Dual Sided Cooling Compatible Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Sync. FET socket of Sync. Buck Converter Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Footprint compatible to DirectFET Applicable DirectFET SQ TM Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 25V min 16V max 0.9m@ 10V 1.4m@ 4.5V Qg Qgd Qgs2 Qrr Qoss Vgs(th) 10nC 3.0nC 58nC 33nC 1.6V tot 31nC S G D S DirectFETTM ISOMETRIC Outline and Substrate Outline (see p.7,8 for details) SX ST MQ MX D MX MT MP Description The IRF6894MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only

IRF6894MTRPBF DirectFET(R)plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max 16V max 0.9m@ 10V 1.4m@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested ISOMETRIC MX l Footprint compatible to DirectFETTM Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l l SQ SX ST MQ MT MX MP Description The IRF6894MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and l

IRF6894MTRPBF DirectFET(R)plus MOSFET with Schottky Diode RoHs Compliant Containing No Lead and Bromide Typical values (unless otherwise specified) Integrated Monolithic Schottky Diode VDSS VGS RDS(on) RDS(on) l Low Profile (<0.7 mm) 25V max 16V max 0.9m@ 10V 1.4m@ 4.5V l Dual Sided Cooling Compatible Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Package Inductance 26nC 9.8nC 2.8nC 56nC 31nC 1.6V l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for Sync. FET socket of Sync. Buck Converter l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l 100% Rg tested ISOMETRIC MX l Footprint compatible to DirectFETTM Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) l l SQ SX ST MQ MT MX MP Description The IRF6894MPbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and l

(on)=45.0 m; dual IRLML6244 1) *** RDS(on)=21 m IRLML6246 1) *** RDS(on)=46 m WBG semiconductors > 10 SOT-23 OptiMOSTM and StrongIRFETTM 25 V logic level 2-4 4-10 > 10 IRF6898MTRPBF** RDS(on)=1.1 m BSB012NE2LXI** RDS(on)=1.2 m IRF6717MTRPBF RDS(on)=1.25 m IRF6894MTRPBF** RDS(on)=1.3 m BSB013NE2LXI** RDS(on)=1.3 m IRF6797MTRPBF** RDS(on)=1.4 m IRF6716M RDS(on)=1.6 m IRF6715MTRPBF RDS(on)=1.6 m IRF6893MTRPBF** RDS(on)=1.6 m IRF6892STRPBF** RDS(on)=1.7 m IRF6795MTRPBF** RDS(on)=1.8 m IRF6714MTRPBF RDS(on)=2.1 m BSF030NE2LQ RDS(on)=3.0 m BSF035NE2LQ RDS(on)=3.5 m IRF6811STRPBF** RDS(on)=3.7 m BSZ010NE2LS5 2) RDS(on)=1.0 m BSZ011NE2LS5 2) RDS(on)=1.1 m BSZ013NE2LS5I** RDS(on)=1.3 m BSZ014NE2LS5IF * ** RDS(on)=1.45 m BSZ017NE2LS5I** RDS(on)=1.7 m BSZ018NE2LS RDS(on)=1.8 m BSZ018NE2LSI** RDS(on)=1.8 m IRF6802SD RDS(on)=4.2 m IRF6710S2TRPBF RDS(on)=4.5 m IRF6712STRPBF RDS(on)=4.9 m IRF6810STRPBF** RDS(on)=5.2 m BSC024NE2LS RDS(on)=2.4 m BSC026NE2LS5 RDS(on)=2.6 m BSC032NE2LS RDS(on)=3.2 m IRFHM8228TRPBF

STM and StrongIRFETTM 25 V logic level RDS(on) max @ VGS=10V [m] <1 1-2 2-4 4-10 > 10 DirectFETTM PQFN 2 x 2 IRF6718L2TRPBF RDS(on)=0.7 m BSB008NE2LX RDS(on)=0.8 m IRF6898MTRPBF * * RDS(on)=1.1 m BSB012NE2LXI * * RDS(on)=1.2 m IRF6717MTRPBF RDS(on)=1.25 m IRF6894MTRPBF * * RDS(on)=1.3 m BSB013NE2LXI * * RDS(on)=1.3 m IRF6797MTRPBF * * RDS(on)=1.4 m IRF6716M RDS(on)=1.6 m IRF6715MTRPBF RDS(on)=1.6 m IRF6893MTRPBF * * RDS(on)=1.6 m IRF6892STRPBF * * RDS(on)=1.7 m IRF6795MTRPBF * * RDS(on)=1.8 m IRF6714MTRPBF RDS(on)=2.1 m BSF030NE2LQ RDS(on)=3.0 m BSF035NE2LQ RDS(on)=3.5 m IRF6811STRPBF * * RDS(on)=3.7 m ISK024NE2LM5 * * * * RDS(on)=2.4 m IRF6802SD RDS(on)=4.2 m IRF6710S2TRPBF RDS(on)=4.5 m IRF6712STRPBF RDS(on)=4.9 m IRF6810STRPBF * * RDS(on)=5.2 m PQFN 3.3 x 3.3 SuperSO8 IQE006NE2LM5 3) RDS(on)=0.6 m IQE006NE2LM5CG 3) RDS(on)=0.6 m BSZ009NE2LS5 RDS(on)=0.9 m BSZ010NE2LS5 RDS(on)=1.0 m BSZ011NE2LS5**** RDS(on)=1.1 m BSZ011NE2LS5I RDS(on)=1.1 m BSZ013NE2LS5I * * RDS(on)=1.3 m BSZ014NE2LS5IF * * * R

DirectFET IRF6718L2 IRF6718L2TRPBF active and preferred IRL6283M IRL6283MTRPBF IRF6898M IRF6898MTRPBF active and preferred Add To Cart DIRECTFET 1.37 DirectFET MX IRF6717M IRF6717MTRPBF active and preferred Add To Cart DIRECTFET 1.02 DirectFET MX IRF6894M IRF6894MTRPBF active and preferred Add To Cart DIRECTFET 1.26 DirectFET MX discontinued Show all Parameters Product Download Spreadsheet OPN Matching Results: 412 Reset All Selections Product Status Order Online Packages Green Budgetary Package Price /1k active active and preferred discontinued not for new design Buy online D2PAK D2PAK7P DIRECTFET DPAK yes 0.06 0.07 0.08 0.1 CanPAK D2PAK (TO-263) D2PAK 7pin (TO-263 7pin) DPAK (TO-252) IRF6798M IRF6798MTRPBF active and preferred DIRECTFET 1.4 DirectFET MX IRF6797M IRF6797MTRPBF active and preferred DIRECTFET 1.47 DirectFET MX IRF8301M IRF8301MTRPBF active and preferred DIRECTFET 1.17 DirectFET MT IRF6893M IRF6893MTRPBF active and preferred DIRECTFET 1.07 DirectFET MX IRF6716M IRF6716MTRPBF active