Power-Dissipation Limited e Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRF820, IRF821, IRF822, and IRF823 are n-channel enhancement-mode silicon-gate power field-effect transis- tors. IRF820R, IRF821R, IRF822R and IRF823R types are advanced power MOSFETs designed, tested, and guaranteed Package TO-220AB TOP VIEW DRAIN === (FLANGE) O __--) DRAIN | = GATE Terminal Diagram N-CHANNEL ENHANCEMENT MODE to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circuits. The IRF types are supplied in the JEDEC TO-220AB plastic s package. Absolute Maximum Ratings (Tc = +25C), Unless Otherwise Specified IRF820 IRF821 IRF&22 IRF823
el Power MOSFETs 2.0A and 2.5A, 450V-500V 'ps(On) = 3.00 and 4.00 Features: @ Single pulse avalanche energy rated @ SOA is power-dissipation limited Nanosecond switching speeds @ Linear transfer characteristics @ High input impedance The IRF820R, IRF821R, IRF822R and IRF823R are ad- File Number 2020 N-CHANNEL ENHANCEMENT MODE O 92C5-42658 TERMINAL DIAGRAM TERMINAL DESIGNATION SOURCE vanced power MOSFETs designed, tested, and guaranteed RAIN = to withstand a specified level of energy in the breakdown SS avalanche mode of operation. These are n-channel en- (FLANGE) Cc - Oo = s ora hancement-mode silicon-gate power field-effect transis- VY nn, tors designed for applications such as switching regulators, + ES switching converters, motor drivers, relay drivers, and driv- TOP VIEW GATE ers for high-power bipolar switching transistors requiring s2cs-39528 high and low gate-driv wer. These types can be ron aled directly tor Inourated, circuits. yp JEDEC TO-220AB The IRF-types are supplied in the JEDEC TO
> GATE * Nanosecond Switching Speeds Linear Transfer Characteristics * High Input Impedance Description The IRF820, IRF821, IRF822, and IRF823 are n-channel Terminal Diagram enhancement-mode silicon-gate power field-effect transis+ tors. IRF820R, IRF821R, IRF822R and IRF823R types are N-CHANNEL ENHANCEMENT MODE advanced power MOSFETs designed, tested, and guaranteed . to withstand a specified level of energy in the breakdown D avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high G speed and low gate-drive power. These types can be operated directly from integrated circutts. The IRF types are supplied In the JEDEC TO-220AB plastic 8 package. Absolute Maximum Ratings (Tc = +259C), Unless Otherwise Specified IRF820 iIRF8&21 IRF822 IRF823 IRF820R IRF&2TR IRF822R IRF823R UNITS Drain-Source Voltage (1) ...
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