STP8NM50FP N-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FP MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) STP8NM50 550V <0.8 8A STP8NM50FP 550V <0.8 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 100% avalanche tested High dv/dt and avalanche capabilities Low gate input resistance Low input capacitance and gate charge TO-220 3 2 1 2 TO-220FP Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STP8NM50 P8NM50 TO-220 Tube STP8NM50FP
STP8NM50FP N-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FP MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) STP8NM50 550V <0.8 8A STP8NM50FP 550V <0.8 8A (1) ID 1. Limited only by maximum temperature allowed 100% avalanche tested High dv/dt and avalanche capabilities Low gate input resistance Low input capacitance and gate charge 2 TO-220 e t e ol Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. du 3 1 ) s ( ct ) (s o r P 3 1 2 TO-220FP s b O Internal schematic diagram t c u d o r P e t e l Applications o s b OOrder codes Switching application Part number Marki
STP8NM50FP N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP VDSS RDS(on) ID 500V 500V < 0.8 < 0.8 8A 8A TYPICAL RDS(on) = 0.7 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value
STP8NM50FP N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP VDSS RDS(on) ID 500V 500V < 0.8 < 0.8 8A 8A TYPICAL RDS(on) = 0.7 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value
STP8NM50FP N-CHANNEL 550V @ Tjmax 0.7 - 8A TO-220/TO-220FP MDmeshTM MOSFET TYPE STP8NM50 STP8NM50FP VDSS (@Tjmax) RDS(on) ID 550V 550V < 0.8 < 0.8 8A 8A TYPICAL RDS(on) = 0.7 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbo
STP8NM50FP N-channel 550V @ Tjmax - 0.7 - 8A - TO-220 - TO-220FP MDmeshTM Power MOSFET General features Type VDSS (@Tjmax) RDS(on) STP8NM50 550V <0.8 8A STP8NM50FP 550V <0.8 8A (1) ID 1. Limited only by maximum temperature allowed 3 1 100% avalanche tested High dv/dt and avalanche capabilities Low gate input resistance Low input capacitance and gate charge TO-220 3 2 1 2 TO-220FP Description The MDmeshTM is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. Internal schematic diagram Applications Switching application Order codes Part number Marking Package Packaging STP8NM50 P8NM50 TO-220 Tube STP8NM50FP
P STP5NK80ZFP STF5NK90Z IRF630FP STP60NF06FP STP7NK40ZFP STP7NK40ZFP STF6NK50Z STP5NK60ZFP STP4NK60ZFP STP7NK80ZFP STP5NK80ZFP STP6NK90ZFP STF5NK90Z STP80NF10FP STP8NM60FP STP9NK65ZFP STP8NK80ZFP STP7NK80ZFP STP6NK60ZFP STP8NK80ZFP STP6NK90ZFP STP80NF10FP STP8NM50FP STP8NM50FP STF9NK90Z STN3NF06L STN1N20 STD10PF06-1 STF24NF12 STF20N20 STP5NK40ZFP STF2HNK60Z STP4NK80ZFP STP4NK80ZFP STP3NK90ZFP STP5NK50ZFP STP3NK60ZFP STF3NK80Z STF5NK90Z STP3NK90ZFP STP55NF06FP STP80NF12FP STP80NF10FP STP7NK40ZFP STP4NK50ZFP STF6NK50Z STP3NK60ZFP STP4NK60ZFP STP4NK80ZFP STP6NK90ZFP STP55NF06FP STP5NK40ZFP STP5NK40ZFP STP5NK50ZFP STP6NK60ZFP STP3NK60ZFP STF6NK70Z STP5NK80ZFP STP4NK80ZFP STF9NK90Z STP6NK90ZFP STP80NF12FP STP14NF12FP IRF630FP STF7NK30Z STP7NK40ZFP STP6NK60ZFP STP9NC65FP STP7NK80ZFP STP5NK80ZFP STP60NF06FP STP16NS25FP STP5NK60ZFP STP7NK80ZFP STF9NK90Z STP80NF10FP STP16NS25FP STP16NS25FP STP11NK50ZFP STP9NK50ZFP STP6NK90ZFP Device Direct ST nearest Device Direct STD12NF06-1 HUF75623P3 HUF75
STP8NM50FP N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP MDmeshTMPower MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS(on) ID 500V 500V < 0.8 < 0.8 8A 8A TYPICAL RDS(on) = 0.7 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmeshTM is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESHTM horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmeshTM family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbo
STP8NM50FP N-CHANNEL 500V - 0.7 - 8A TO-220/TO-220FP MDmesh Power MOSFET TYPE STP8NM50 STP8NM50FP n n n n n VDSS RDS(on) ID 500V 500V < 0.8 < 0.8 8A 8A TYPICAL RDS(on) = 0.7 HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE DESCRIPTION The MDmesh is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products. 3 3 1 2 1 TO-220 2 TO-220FP INTERNAL SCHEMATIC DIAGRAM APPLICATIONS The MDmesh family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies. ABSOLUTE MAXIMUM RATINGS Symbol Param
note AN2928 (see Section 11: References and related materials: 2). Figure 2. STEVAL-ILL013V1 block schematic STEVAL- ILL013V1 HIGH POWER FACTOR BOOST CONVERTER MODIFIED BUCK CONVERTER STTH1L06 VIN = 88 V to 265 V AC 80 W LOAD 400 V Input filter STPSC806D STP8NM50FP PF controller L6562A PF controller L6562A STF9NM50N EXTERNAL PWM GENERATOR Microcontroller ST7LITEU05 Bright regulation AM00400 Doc ID 15327 Rev 2 6/43 Design concept UM0670 Figure 3 illustrates a high PF boost converter design concept. Two additional features are implemented in the application and these improvements are shown in the blue segments. The first improves circuit behavior during startup (see Section 10.1 for a description) and the second allows the dimming of the LED down to 0%, or no LED brightness (description provided in Section 10.2). Figure 4 shows the design concept of a modified buck converter with a dimming function. The output LED current is adjusted by setting the proper sense resistor size via the jumpers (to ad
note AN2928 (see Section 11: References and related materials: 2). Figure 2. STEVAL-ILL013V1 block schematic STEVAL- ILL013V1 HIGH POWER FACTOR BOOST CONVERTER MODIFIED BUCK CONVERTER STTH1L06 VIN = 88 V to 265 V AC 80 W LOAD 400 V Input filter STPSC806D STP8NM50FP PF controller L6562A PF controller L6562A STF9NM50N EXTERNAL PWM GENERATOR Microcontroller ST7LITEU05 Bright regulation AM00400 6/42 Doc ID 15327 Rev 1 UM0670 Design concept Figure 3 illustrates a high PF boost converter design concept. Two additional features are implemented in the application and these improvements are shown in the blue segments. The first improves circuit behavior during startup (see Section 10.1 for a description) and the second allows the dimming of the LED down to 0%, or no LED brightness (description provided in Section 10.2). Figure 4 shows the design concept of a modified buck converter with a dimming function. The output LED current is adjusted by setting the proper sense resistor size via the jumpers (to ad
C1 0.22 F 630V T1 R14 100 C5 10 nF R11 1M R50 - 22 k D2 1N5248B R1 1 M F1 4A/250V D8 1N4148 R6 47 k ZCD R2 1 M VCC MULT - 8 3 COMP 5 C23 150 nF 2 R3 15 k L6562A GND C29 22 F 25V INV 1 7 4 6 C2 10nF R12 1M C3 - 2200 nF C4 100 nF CS GD R7 33 C6 47 F 450V Q1 STP8NM50FP R8 47k R15 SHORTED R9 0.68 0.25W R10 0.68 0.25W R13 15 k R13B 82 k Boost Inductor Spec (ITACOIL E2543/E) E25x13x7 core, N67 ferrite 1.5 mm gap for 0.7 mH primary inductance Primary: 102 turns 20x0.1 mm Secondary: 10 turns 0.1 mm Table 1. Des. Bill of material Part type / part value Description Supplier F1 Fuse 4 A Fuse T4A - time delay Wichmann P1 W06 600 V-1 A Single phase bridge rectifier Chenyi electronics C1 220 NF-630 V B32653-A6224-K - film capacitor Epcos C2 10 NF 50 V cercap - general purpose Avx C3 2u2F SR305E225MAR - 50 V ceramic capacitor - Z5U Avx C4 100NF 50 V cercap - general purpose Avx C5 10NF 50 V cercap - general purpose Avx C6 47 F-450 V aluminium elcap - ED series - 85C Daewoo C23 150NF 50 V cercap - general purpos
w conn., - 2 wires Phoenix Contact P 5.08 mm L1 HF2826-123Y1R8-T01 Input EMI filter TDK DWG L2 1974.0002 PFC inductor - 0.52 mH Magnetica DWG L3 1073.0083 1 H - 5 A inductor Magnetica DWG Q1 STF12NM50N N-channel power MOSFET STMicroelectronics TO-220FP Q3 STP8NM50FP N-channel power MOSFET STMicroelectronics TO-220FP Doc ID 16064 Rev 1 DWG 19/28 Bill of material Table 5. AN3014 EVL90WADP-LLCSR demonstration board bill of material (continued) Des. Part type/part value Description Supplier Case Q4 STP8NM50FP N-channel power MOSFET STMicroelectronics TO-220FP Q5 BC847C NPN small signal BJT Vishay SOT-23 Q6 BC847C NPN small signal BJT Vishay SOT-23 Q9 BC847C NPN small signal BJT Vishay SOT-23 Q11 STF60N55F3 N-channel power MOSFET STMicroelectronics TO-220FP Q12 STF60N55F3 N-channel power MOSFET STMicroelectronics TO-220FP R1 3.3 M SMD film res - 1/4 W - 5% - 250 ppm/C Vishay 1206 R2 3.3 M SMD film res - 1/4 W - 5% - 250 ppm/C Vishay 1206 R3 1 M SMD film res - 1/4 W - 1% - 100 ppm/C Vishay
FD 500 0.4 27.5 8.8 12 TO-220 116 0.46 8 20 STP12NM50FDFP 500 0.4 27.5 8.8 12 TO-220FP 116 0.46 8 20 STW14NM50FD 500 0.4 27.5 8.8 14 TO-247 116 0.46 8 20 STD5NM50T4 500 0.8 13 9.1 7.5 DPAK 185 1.1 11.5 15 STP8NM50 500 0.8 13 9.1 7.5 TO-220 185 1.1 11.5 15 STP8NM50FP 500 0.8 13 9.1 7.5 TO-220FP 185 1.1 11.5 15 STD3NM50T4 500 3 5.5 13.75 3 DPAK 210 0.79 7.5 15 STE70NM60 600 0.055 178 8.9 70 ISOTOP 600 14.4 48 15 STY60NM60 600 0.055 178 8.9 60 Max247 600 14.4 48 15 STW45NM60 600 0.11 96 8.64 45 TO-247 508 10 40 15 STW26NM60 600 0.135 73 9.125 30 TO-247 73 45 30.5 15 STW30NM60D 600 0.145 73 10.25 30 TO-247 165 1.1 14 20 STB25NM60NT4* 600 0.17 20 D2PAK STB25NM60N-1* 600 0.17 20 I2PAK Part number * Coming soon 1 Qg(typ) RDS(on)*Qg ID(cont) @ 10V (typ) [A] [nC] [ * nC] Fast diode version in blue characters Package Trr (typ) Qrr (typ) Irrm (typ) dv/dt @ 25C @ 25C @ 25C [V/ns] [ns] [C] [A] MDmesh product range VDSS [V] RDS(on)(max) @ 10V [] STP25NM60N* 600 0.17 20 TO-220 STF25NM60N* 600 0.17 20 TO-220FP S
w conn., - 2 wires Phoenix Contact P 5.08 mm L1 HF2826-123Y1R8-T01 Input EMI filter TDK DWG L2 1974.0002 PFC inductor - 0.52 mH Magnetica DWG L3 1073.0083 1 H - 5 A inductor Magnetica DWG Q1 STF12NM50N N-channel power MOSFET STMicroelectronics TO-220FP Q3 STP8NM50FP N-channel power MOSFET STMicroelectronics TO-220FP 20/29 Doc ID 16064 Rev 2 DWG AN3014 Table 5. Bill of material EVL90WADP-LLCSR demonstration board bill of material (continued) Des. Part type/part value Description Supplier Case Q4 STP8NM50FP N-channel power MOSFET STMicroelectronics TO-220FP Q5 BC847C NPN small signal BJT Vishay SOT-23 Q6 BC847C NPN small signal BJT Vishay SOT-23 Q9 BC847C NPN small signal BJT Vishay SOT-23 Q11 STF60N55F3 N-channel power MOSFET STMicroelectronics TO-220FP Q12 STF60N55F3 N-channel power MOSFET STMicroelectronics TO-220FP R1 3.3 M SMD film res - 1/4 W - 5% - 250 ppm/C Vishay 1206 R2 3.3 M SMD film res - 1/4 W - 5% - 250 ppm/C Vishay 1206 R3 1 M SMD film res - 1/4 W - 1% - 100 ppm/C Vishay