STP8NM50N Datasheet N-channel 500 V, 0.73 typ., 5 A, MDmeshTM II Power MOSFETs in DPAK and TO-220 packages Features Order codes TAB TAB VDS @ TJmax RDS(on) max. ID 550 V 0.79 5A STD8NM50N 2 3 1 STP8NM50N TO-220 DPAK 1 2 3 * * * 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Applications D(2, TAB) * Switching applications Description G(1) S(3) AM01475v1_noZen These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters. Product status links STD8NM50N STP8NM50N Product summary Order code STD8NM50N Marking 8NM50N Package DPAK Packing Tape and reel Order code STP8NM50N Marking 8NM50N Package TO-220 Packing Tube DS6808 - Rev 7 - September 2018 For
STP8NM50N, STU8NM50N N-channel 500 V, 0.73 typ., 5 A MDmeshTMII Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet -- production data Features TAB Order codes VDSS@TJMAX RDS(on)max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 DPAK 5A TAB 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TAB 1 Applications 3 3 2 2 1 IPAK TO-220 Switching applications Description Figure 1. These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ 4!" ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD8NM50N STP8NM50N 8NM50N TO-220 Tube STU8NM50N September 2012 This is information on a product in
STP8NM50N, STU8NM50N N-channel 500 V, 0.73 typ., 5 A MDmeshTMII Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet -- production data Features TAB Order codes VDSS@TJMAX RDS(on)max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 DPAK 5A TAB 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TAB 1 Applications 3 3 2 2 1 IPAK TO-220 Switching applications Description Figure 1. These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ 4!" ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD8NM50N STP8NM50N 8NM50N TO-220 Tube STU8NM50N September 2012 This is information on a product in
STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmeshTMII Power MOSFET in DPAK, TO-220 and IPAK Features TAB Order codes VDSS@TJMAX RDS(on)max. STD8NM50N STP8NM50N STU8NM50N ID 3 1 550 V < 0.79 DPAK 5A TAB 100% avalanche tested Low input capacitances and gate charge Low gate input resistance TAB 1 Applications 3 3 2 2 1 IPAK TO-220 Switching applications Description Figure 1. These devices are N-channel Power MOSFETs developed using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Internal schematic diagram $ 4!" ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD8NM50N STP8NM50N 8NM50N TO-220 Tube STU8NM50N November 2011 IPAK Doc ID 17413 Rev 5 1/19 www.st.com 19 Contents STD8NM50N, STP8NM50N
STP8NM50N, STU8NM50N N-channel 500 V, 0.73 , 5 A MDmeshTMII Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS @TJMAX STD8NM50N STF8NM50N STP8NM50N STU8NM50N RDS(on) max. 3 ID 3 1 2 1 DPAK 550 V < 0.79 IPAK 5A 100% avalanche tested Low input capacitances and gate charge Low gate input resistance 3 1 3 2 1 2 TO-220 TO-220FP Application Figure 1. Switching applications Internal schematic diagram Description $ These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. ' 3 !-V Table 1. Device summary Order codes Marking Packages Packaging DPAK Tape and reel STD8NM50N STF8NM50N TO-220FP 8NM50N STP8NM50N TO-220 STU8NM50N IPAK September 2010 Doc ID 17413 Rev 2 Tube 1/17 www.st.com 17 Contents STD8NM50N,
L8N10F7 STD10NF10T4 STL100N10F7 STL8DN10LF3 STD47N10F7AG STD15NF10T4 STD25N10F7 STH80N10F7-2 STD100N10F7 STB80NF10T4 STH110N10F7-2 STH240N10F7-2 STH240N10F7-6 STH310N10F7-2 STH180N10F3-2 STH185N10F3-2 STD25NF20 STB75NF20 STD8NF25 STD5NK40ZT4 STB45N40DM2AG STP8NM50N STB32NM50N STB34N50DM2AG STB45N50DM2AG STD14NM50N STL3NM60N STD9HN65M2 STL12N60M2 STD9NM60N STD12N60M2 STD13NM60N STB18N60DM2 STB24N60M2 STB28N60DM2 STB35N60DM2 STB37N60DM2AG STL16N60M2 STL25N60M2-EP STB33N60DM2 STB45N60DM2AG STB43N65M5 STB23N80K5 STD5N95K3 STH6N95K5-2 STD4NK100Z STB120NF10T4 PowerFlat 5x6 PowerFlat-4 TO-252 PowerFlat 5x6 PowerFlat-5 DPAK-3 TO-252 D2PAK-2 H2PAK-2 DPAK TO-263 H2PAK-2 H2PAK-2 H2PAK-6 H2PAK-2 H2PAK-2 H2PAK-2 DPAK TO-263 DPAK TO-252 TO-252-3 TO-220 D2PAK TO-252-3 TO-252-3 TO-252 PowerFlat-3.3 TO-252-3 PowerFlat-8 DPAK TO-252-3 TO-252 D2PAK-3 D2PAK D2PAK-3 D2PAK-3 TO-252-3 PowerFlat-8 PowerFlat-8 D2PAK-3 TO-252-3 D2PAK-3 TO-252-3 TO-252 H2PAK-3 TO-252-3 TO-263 100 100 100 100 100 100 100 100 100 100 100 100
8 N-channel >350 V to 700 V (cont'd) Part Number STP19NM50N STF19NM50N STB21NK50Z STD16N50M2 STF16N50M2 STP16N50M2 STD13NM50N STD12N50DM2(1) STF12N50DM2(1) STD12N50M2 STF12N50M2 STP12N50M2 STD11N50DM2(1) STD11N50M2 STF11N50M2 STD8NM50N STD9NM50N STF8NM50N STP8NM50N STD14NM50NAG(*) STD15N50M2AG(*) STD11N50DM2(*)(1) STD5N52U STD7N52K3 STD6N52K3 STD5N52K3 STU5N52K3 STD5N52U(1) VDSS (V) RDS(on) (max) @ VGS 10 V (W) Automotive Grade ID(Cont) (A) Qg (typ) (nC) Package 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 500 525 525 525 525 525 525 0.25 0.25 0.27 0.28 0.28 0.28 0.32 0.35 0.35 0.38 0.38 0.38 0.53 0.53 0.53 0.79 0.79 0.79 0.79 0.32 0.38 0.53 0.06 0.85 1.2 1.5 1.5 1.5 Yes Yes Yes Yes - 14 14 17 13 13 13 12 11 11 10 10 10 8 8 8 5 5 5 5 12 10 8 4.4 6 5 4.4 4.4 4.4 34 34 85 19.5 19.5 19.5 27 16 16 15 15 15 12 12 12 14 14 14 14 27 15 TO-220 TO-220FP DPAK DPAK TO-220FP TO-220 DPAK DPAK TO-220FP DPAK TO-220FP TO-220 DPAK DPAK TO-220FP DPAK DPAK TO-220FP TO-220 DPAK
500 0,38 _ 10 15 TO-220FP _ 10 15 STP12N50M2 500 0,38 STD11N50DM2 500 0,53 STD11N50M2 500 0,53 8 _ 8 TO-220 DPAK 12 DPAK STF11N50M2 500 0,53 _ 8 12 TO-220FP STD8NM50N 500 0,79 _ 5 14 DPAK STD9NM50N 500 0,79 Yes 5 14 DPAK STF8NM50N 500 0,79 _ 5 14 TO-220FP STP8NM50N 500 0,79 _ 5 14 TO-220 STD14NM50NAG (*) 500 0,32 Yes 12 27 DPAK 15 STD15N50M2AG (*) 500 0,38 Yes 10 STD11N50DM2 (*) 500 0,53 _ 8 DPAK DPAK STD5N52U 525 0,06 _ 4,4 16,9 DPAK STD7N52K3 525 0,85 _ 6 33 DPAK Note: * coming soon In Blue Fast Recovery diode devices N-channel MDmesh >350 V to 700 V (MDmesh DM2 series/MDmesh M2 series/MDmesh M5 series) Part Number VDSS (V) RDS(on) (max) @ VGS 10 V () Automotive Grade ID(Cont) (A) Qg (typ) (nC) Package STD6N52K3 525 1,2 _ 5 - DPAK STD5N52K3 525 1,5 _ 4,4 17 DPAK STU5N52K3 525 1,5 _ 4,4 17 IPAK STD5N52U 525 1,5 _ 4,4 17 DPAK STD4N52K3 525 2,6 _ 2,5 11 DPAK STP36N55M5 550 0,08 _ 33 72 TO-220 STL36N55M5 550 0,09 _ 22,5 67 PowerFLAT 8x8 HV STD18N55M5 550 0,192 _ 16 31 DPAK 98 330 STY100NM60N 600 0,