6 26,46 26,46 28,47 28,47 28,47 28,47 28,47 28,47 28,47 26,46 26,46 28,47 28,47 28,47 28,47 28,47 28,47 28,47 67 67 67 67 67 67 67 67 67 67 62 62 62 62 62 62 62 62 62 62 62 62 67 67 67 67 T10A6CI T12A6CI T16A6CI TIP31CF TIP32CF TIP33C TIP34C TIP35C TIP36C TIP41CF TIP42CF TIP112F TIP117F U5A2CI U5A2CIC U5A4CI U5A4CIC U10A2CIC U10A4CIC Z02W2.0V Z02W2.2V Z02W2.4V Z02W2.7V Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4.7V Z02W5.1V Z02W5.6V Z02W6.2V Z02W6.8V Z02W7.5V Z02W8.2V Z02W9.1V Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V Z02W16V Z02W18V Z02W20V Z02W22V Z02W24V Z5W27V Triac Triac Triac Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor FRD FRD FRD FRD FRD FRD Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener D

KTD2424 KTC2020L KTD1411 KTC5103D KTC5103L KTC1003 KTD1691 BC546 KTC4374 KTC3227 MPSA06 KTC1006 KTD1898 KTD1863 BD139 KTD2092 KTD1414 KTD2060 KTC2027 KTD2066 KTC4511 KTD1937 MJD112 KTD2854 MJD112L TIP112F TIP31CF KTC2022D KTC2022L KTC2028 KTD1413 KTD2059 TIP41CF KTD1415 TIP33C TIP35C TIP35CA Note) : TO-3P(N)-E PKG http://www.keccorp.com 11 Bipolar Junction Transistor Line-up NPN Transistor ( VCEO : 120V ~ 800V ) TFSM TFSV VCEO TFS6 VSM ESM TESV TES6 USM USV US6 TSM TSV TS6 SOT-23 SOT-89 Ic (0.6 X0.8) (1.0X0.8) (1.0X0.8) (1.2 X0.8) 100mA (1.60X0.85) (1.6 X1.2) (1.6 X1.2) (2.0X1.25) (2.0X1.25) (2.0X1.25) (2.9X1.6) KTC4077 (2.9X1.6) (2.9X1.6) (2.93X1.3) (4.7X2.5) KTC3911S 800mA KTC4373 1A 120V 1.2A 8A 10A 600mA 140V 2N5550S 10A 12A 50mA KTC4372 150V 10A 600mA 2N5551S 1A 160V 1.5A 15A 100mA 1.5A 180V 2A 5A 100mA 200V 500mA MMBTA43 1A 230V 15A 250V 50mA 50mA 100mA KTC3207T 300V 200mA 500mA 350V 300mA 300mA 1.5A 2A 400V 4A 5A 8A 12A 3A 500V 5A 530V 1.5A 600V 1A 1.5A 800V 3A 12 MMBTA42 http://www.kec.c

81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 81 29, 57 80 80 80 80 80 80 80 80 80 80 80 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 78 80 80 80 41 TIP117F TIP31CF TIP32CF TIP33C TIP33C TIP34C TIP34C TIP35C TIP35C TIP36C TIP36C TIP41CF TIP42CF U10A2CIA U10A2CIC U10A3CI U5A2CI U5A2CIC USFB053 USFB073 USFB13 USFB13L Z02W10V Z02W11V Z02W12V Z02W13V Z02W15V Z02W16V Z02W18V Z02W2.0V Z02W2.2V Z02W2.4V Z02W2.7V Z02W20V Z02W22V Z02W24V Z02W3.0V Z02W3.3V Z02W3.6V Z02W3.9V Z02W4.3V Z02W4.7V Z02W5.1V Z02W5.6V Z02W6.2V Z02W6.8V Z02W7.5V Z02W8.2V Z02W9.1V Z5W27V Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor FRD FRD FRD FRD FRD SBD SBD SBD SBD Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Diode Zener Di

TIP41CF MARKING SPECIFICATION TO-220IS PACKAGE 1. Marking method Laser Marking or Ink Marking. 2. Marking 1 K 2 TIP41CF 216 3 2002. 7. 11 4 No. Item Marking Description 1 KEC K KEC CORP. 2 Device Name TIP41CF TIP41CF 3 hFE Grade - - 4 Lot No. 216 Revision No : 0 2 Year 0~9 : 2000~2009 16 Week 16 : 16th Week 1/1

Matsushita KRA242M RN2908FE Toshiba KRA758E TIP36C Motorola TIP36C UN211F Matsushita KRA1 19S UN4222 Matsushita KRA243M RN2909 Toshiba KRA759U TIP36C SGS-T TIP36C UN211H Matsushita KRA1 18S UN4223 Matsushita KRA244M RN2909FE Toshiba KRA759E TIP41C Mospec TIP41CF UN211L Matsushita KRA101S UN4224 Matsushita KRA246M RN2910 Toshiba KRA760U TIP41C Motorola TIP41CF UN211M Matsushita KRA105S UN5110 Matsushita KRA314 RN2910FE Toshiba KRA760E TIP41C SGS-T TIP41CF UN211N Matsushita KRA106S UN5111 Matsushita KRA302 RN2911 Toshiba KRA761U TIP42C Mospec TIP42CF UN221E Matsushita KRC109S UN5112 Matsushita KRA303 RN2911FE Toshiba KRA761E TIP42C Motorola TIP42CF UN221F Matsushita KRC1 19S UN5113 Matsushita KRA304 RN2961 Toshiba KRA721U TIP42C SGS-T TIP42CF UN221H Matsushita KRC118S UN5114 Matsushita KRA307 RN2961FE Toshiba KRA721E TIP112 SGS-T TIP112F UN221L Matsushita KRC101S UN5115 Matsushita KRA311 RN2962 Toshiba KRA722U TIP112 Motorola TIP112F UN221M Matsushita KRC105S UN5116 Matsu

TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C S P Complementary to TIP42CF. G B E ) Collector-Base Voltage SYMBOL RATING UNIT VCBO 100 V L L M D Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V DC IC 6 Pulse ICP 10 IB 2 A 2 W 25 W D N N H M N P Q R S 0.5 Typ G H J K L A Base Current 1 2 3 1. BASE Q Collector Current R J CHARACTERISTIC K MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES 2. COLLECTOR Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 3. EMITTER PC Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 100 - - V Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.7 mA Collector Cut-off

TIP41CF TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P F U Complementary to TIP42CF. E G B S ) RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO 100 V Emitter-Base Voltage VEBO 5 V IC 6 ICP 10 IB 2 A 2 W 25 W DC Collector Current D D N Base Current N T T A O Pulse M J SYMBOL T L 1 2 3 Q CHARACTERISTIC L K MAXIMUM RATING (Ta=25 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX 3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 1. BASE 2. COLLECTOR Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range PC Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 3. EMITTER TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=30mA, IB=0 100 - - V Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.7 mA Collector Cut-off Current ICES VCE=100V, VEB=0 - - 400 A Emi

C9014S KTC9015S 200 40 600 BC847W 45 KTC4075 50 BC857W 100 KTA2014 150 17 SALES ENGINEERING GROUP General Purpose Power Transistor VCEO(V) IC(A) NPN PNP 30 3 KTC4369 60 3 60 Package VCEO(V) IC(A) NPN PNP KTA1658 100 5 KTD2059 KTB1367 TKC2026 KTA1046 100 6 TIP41CF TIP42CF 3 KTD2058 KTB1366 160 1.5 KTC4370 KTA1659 80 4 KTD2060 KTB1368 180 1.5 KTC4370A KTA1659A 80 6 KTC4511 KTA1725 180 2 KTD2061 KTB1369 80 7 - KTB1370 200 4 KTC1003 - 100 3 TIP31CF TIP32CF 230 1 KTC4793 KTA1873 100 5 KTC2028 KTA1049 300 0.1 KTC3229 - VCEO(V) IC(A) NPN PNP VCEO(V) IC(A) NPN PNP 20 5 - KTA1709 120 1.2 KTC2803 KTA1704 30 3 KTC2804 KTA1705 150 0.5 KTC3423 KTA1360 30 3 KTD882 KTB772 160 1.5 KTC2800 KTA1700 45 1.5 BD135 BD136 200 0.1 KTC3502 - 60 5 KTD1691 KTB1151 300 0.1 KTC3503 KTA1381 80 1.5 BD139 BD140 300 0.2 KTC4217 - 120 1 KTD600K KTB631K 400 0.5 - KTA1703 TO-220IS Package TO-126 Package TO-220IS Package TO-126 18 SALES ENGINEERING GROUP Zener Diode Characteristic of Zener Diode Features * Available Package : ESC,US

TH2369A Transistor KEC MJE13007F Transistor KEC PG05FBESC TVS Diode KEC TIP36C Transistor KEC KTJ6131E SMOS FET KEC MJE13009F Transistor KEC PG05FSESC TVS Diode KEC TIP36C Transistor KEC KTJ6164S SMOS FET KEC MMBTA05 Transistor KEC PG05GBUSC TVS Diode KEC TIP41CF Transistor KEC KTK161 JFET KEC MMBTA06 Transistor KEC PG05GBUSV TVS Diode KEC TIP42CF Transistor KEC KTK211 JFET KEC MMBTA13 Transistor KEC PG05GXTE6 TVS Diode KEC U10A2CIA FRD KEC KTK5131E SMOS FET KEC MMBTA14 Transistor KEC PG05GXTEV TVS Diode KEC U10A2CIC FRD KEC KTK5131S SMOS FET KEC MMBTA42 Transistor KEC PG05GXUS6 TVS Diode KEC U10A3CI FRD KEC KTK5131U SMOS FET KEC MMBTA43 Transistor KEC PG05HAS23 TVS Diode KEC U5A2CI FRD KEC KTK5131V SMOS FET KEC MMBTA44 Transistor KEC PG05HBTS6 TVS Diode KEC U5A2CIC FRD KEC KTK5132E SMOS FET KEC MMBTA517 Transistor KEC PG05HSUSC TVS Diode KEC USFB053 SBD KEC KTK5132S SMOS FET KEC MMBTA55 Transistor KEC PG05HXTS6 TVS Diode KEC USFB073 SBD KEC KTK5132V SMOS FET KEC MMBTA56 Transistor KEC PG08GBUSC

TIP41CF. G B E ) Collector-Base Voltage SYMBOL RATING UNIT VCBO -100 V L L M D Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V DC IC -6 Pulse ICP -10 IB -2 A 2 W 25 W D N N H M N P Q R S 0.5 Typ G H J K L A Base Current 1 2 3 1. BASE Q Collector Current R J CHARACTERISTIC K MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.3 10.0 + _ 0.3 15.0 + _ 0.3 2.70 + 0.76+0.09/-0.05 _ 0.2 3.2 + _ 0.3 3.0 + _ 0.3 12.0 + 0.5+0.1/-0.05 _ 0.5 13.6 + _ 0.2 3.7 + 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 0.1 2.54 + _ 0.1 6.8 + _ 0.2 4.5 + _ 0.2 2.6 + DIM A B C D E F F FEATURES 2. COLLECTOR Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range 3. EMITTER PC Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.7 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -400 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA VCE=

TIP41CF. E G B S ) RATING UNIT Collector-Base Voltage VCBO -100 V Collector-Emitter Voltage VCEO -100 V Emitter-Base Voltage VEBO -5 V IC -6 ICP -10 IB -2 A 2 W 25 W DC Collector Current D D N Base Current N T T A O Pulse M J SYMBOL T L 1 2 3 Q CHARACTERISTIC L K MAXIMUM RATING (Ta=25 DIM A B C D E F G H R J K L M V N O P Q R H S T U V MILLIMETERS 10.30 MAX 15.30 MAX 2.700.30 0.85 MAX 3.200.20 3.000.30 12.30 MAX 0.75 MAX 13.600.50 3.90 MAX 1.20 1.30 2.54 4.500.20 6.80 2.600.20 10 25 5 0.5 2.600.15 1. BASE 2. COLLECTOR Collector Power Ta=25 Dissipation Tc=25 Junction Temperature Storage Temperature Range PC Tj 150 Tstg -55 150 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC 3. EMITTER TO-220IS ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT VCEO(SUS) IC=-30mA, IB=0 -100 - - V Collector Cut-off Current ICEO VCE=-60V, IB=0 - - -0.7 mA Collector Cut-off Current ICES VCE=-100V, VEB=0 - - -400 A Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -1 mA hFE VCE=-4V, IC=-0.3A 30 - - DC Current Gain VCE=-4V, IC=-

TH2369A Transistor KEC MJE13007F Transistor KEC PG05FBESC TVS Diode KEC TIP36C Transistor KEC KTJ6131E SMOS FET KEC MJE13009F Transistor KEC PG05FSESC TVS Diode KEC TIP36C Transistor KEC KTJ6164S SMOS FET KEC MMBTA05 Transistor KEC PG05GBUSC TVS Diode KEC TIP41CF Transistor KEC KTK161 JFET KEC MMBTA06 Transistor KEC PG05GBUSV TVS Diode KEC TIP42CF Transistor KEC KTK211 JFET KEC MMBTA13 Transistor KEC PG05GXTE6 TVS Diode KEC U10A2CIA FRD KEC KTK5131E SMOS FET KEC MMBTA14 Transistor KEC PG05GXTEV TVS Diode KEC U10A2CIC FRD KEC KTK5131S SMOS FET KEC MMBTA42 Transistor KEC PG05GXUS6 TVS Diode KEC U10A3CI FRD KEC KTK5131U SMOS FET KEC MMBTA43 Transistor KEC PG05HAS23 TVS Diode KEC U5A2CI FRD KEC KTK5131V SMOS FET KEC MMBTA44 Transistor KEC PG05HBTS6 TVS Diode KEC U5A2CIC FRD KEC KTK5132E SMOS FET KEC MMBTA517 Transistor KEC PG05HSUSC TVS Diode KEC USFB053 SBD KEC KTK5132S SMOS FET KEC MMBTA55 Transistor KEC PG05HXTS6 TVS Diode KEC USFB073 SBD KEC KTK5132V SMOS FET KEC MMBTA56 Transistor KEC PG08GBUSC