revision shall be completed by 28 April 2009. MIL-PRF-19500/371G 28 January 2009 SUPERSEDING MIL-PRF-19500/371F 13 September 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH POWER, TYPES 2N3902, 2N3902T1, 2N3902T3, 2N5157, 2N5157T1, AND 2N5157T3, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (TO-254AA, T1), and figure 3 (TO-257AA, T3). 1.3 Maximum ratings. Unless otherwise specified, TA = +25C. Type 2N3902 2N3902T1 2N3902T3 2N5157 2N5157
24 Pages, 240 KB, Original
24 Pages, 240 KB, Original 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 5V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 1A 2V / 2.5A 2V / 2.5A 2N4906 2N4913 2N4914 2N4915 2N5038 2N5067 2N5068 2N5069 2N5157 2N5301 2N5302 2N5303 2N5671 PRODUCT 2N3054 2N3054A 2N3054X 2N3441 2N3583 2N3584 2N3584-JQR-A 2N3584X 2N3585 2N3738 2N3739 2N3740 2N3740A 2N3740AR 2N3740R 2N3741 2N3741A 2N3741R 2N3766 2N3767 2N3879 2N4231 2N4231A 2N4232 2N4232A 2N4233 2N4233A 2N4240 2N4273 2N4898 2N4898CECC 2N4898X 2N4899 2N4899CECC 2N4899X 2N4900 2N4900CECC 2N4900X 2N4910 2N4910CECC 2N4910X 2N4911 2N4911CECC PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN Status Polarity NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN PNP PNP PNP PNP PNP PNP PNP PNP PNP NPN NPN NPN NPN NPN TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3 (TO204AA) TO3
1197 Pages, 40410 KB, Original2N5157 NPN High Power Silicon Transistors Rev. V2 Features * Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371 * TO-3 (TO-204AA) Package Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Off Characteristics Collector - Emitter Cutoff Current VCE = 400 Vdc, 2N3902 VCE = 500 Vdc, 2N5157 ICEO Adc -- 100 100 Collector - Emitter Cutoff Current VBE = 1.5 Vdc, VCE = 700 Vdc ICEX Adc -- 20 Collector - Emitter Cutoff Current VBE = 5 Vdc, 2N3902 VBE = 6 Vdc, 2N5157 IEBO Adc -- 200 200 90 On Characteristics1 Forward Current Transfer Ratio IC = 0.5 Adc, VCE = 5 Vdc IC = 1.0 Adc, VCE = 5 Vdc IC = 2.5 Adc, VCE = 5 Vdc IC = 3.5 Adc, VCE = 5 Vdc HFE - 25 30 10 5 Collector - Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 3.5 Adc, IB = 0.7 Adc VCE(SAT) Vdc -- 0.8 2.5 Base - Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 3.5 Adc, IB = 0.7 Adc VCE(SAT) Vdc -- 1.5 2.0 Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.2 Adc,
4 Pages, 405 KB, Originalmply with this revision shall be completed by 22 October 1999 INCH-POUND MIL-PRF-19500/371D 23 July 1999 SUPERSEDING MIL-S-19500/371C 27 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER TYPES 2N3902 AND 2N5157 JAN AND JANTX This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, high-power transistors. Two levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2 Physical dimensions. See figure 1 (similar to TO-3), (see 3.3). 1.3 Maximum ratings. Type PT 1/ PT 2/ VCBO VCEO VEBO IB IC TJ and TSTG RJC TA = +25C TC = +75C W W V dc V dc V dc A dc A dc C C/W 2N3902 2N5157 5.0 100 700 400 5.0 2.0 3.5 -65 to +200 1.25 5.0 100 700 500 6.0 2.0 3.5 -65 to +200 1.25 1/ Derate linearly 29 mW/C above TA = +25C. 2/ Derate linearly 0.8 W/C above TC = +75C. Beneficial commen
17 Pages, 78 KB, Original2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VEBO VCBO IB IC @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range PT Tj, Tstg 2N3902 2N5157 400 500 5.0 6.0 700 2.0 3.5 5.0 100 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 W/0C for TC > +750C Symbol RJC Max. 1.25 Unit C/W TO-3 (TO-204AA)* 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit ICEO 250 250 Adc ICEX 500 Adc IEBO 200 200 Adc VBE(sat) 1.5 2.0 Vdc VCE(sat) 0.8 2.5 Vdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc VCE = 400 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc; VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 2N3902 2N5157 2N3902
3 Pages, 49 KB, Original2N5157 Features * Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 * TO-3 (TO-204AA) Package Maximum Ratings Symbol 2N3902 2N5157 Units Collector - Emitter Voltage Ratings VCEO 400 500 Vdc Emitter - Base Voltage VEBO 5.0 6.0 Vdc Collector - Base Voltage VCBO 7.0 Vdc Base Current IB 2.0 Adc Collector Current IC 3.5 Adc Total Power Dissipation @ TA = +25 C (1) @ TA = +25 C (2) PT 5.0 100 W W Tj, Tstg -65 to +200 C Operating & Storage Temperature Range Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Symbol Maximum Units RJC 1.25 C/W 1) Derate linearly @ 28.57 mW/C for TA > +25C 2) Derate linearly @ 0.8 mW/C for TC > +75C Electrical Characteristics OFF Characteristics Symbol Mimimum Maximum Units ICEO --- 250 250 Adc ICEX --- 500 Adc IEBO --- 200 200 Adc Base - Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Vdc IC = 3.5 Adc, IB = 0.7 Vdc VBE(sat) --- 1.5 2.0 Vdc Collector - Emitter Saturation Voltage IC = 1.0 Adc, IB = 0.1 Adc IC = 3.5 Adc, IB = 0
3 Pages, 170 KB, Original2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VEBO VCBO IB IC @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range PT Tj, Tstg 2N3902 2N5157 400 500 5.0 6.0 700 2.0 3.5 5.0 100 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 W/0C for TC > +750C Symbol RJC Max. 1.25 Unit C/W TO-3 (TO-204AA)* 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit ICEO 250 250 Adc ICEX 500 Adc IEBO 200 200 Adc VBE(sat) 1.5 2.0 Vdc VCE(sat) 0.8 2.5 Vdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc VCE = 400 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc; VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 2N3902 2N5157 2N3902
2 Pages, 47 KB, Original2N5157 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation VCEO VEBO VCBO IB IC @ T A = +250C (1) @ T C = +750C (2) Operating & Storage Temperature Range PT 2N3902 400 5.0 2N5157 500 6.0 700 2.0 3.5 5.0 100 Unit Vdc Vdc Vdc Adc Adc W W 0 T j , T stg -65 to +200 C Symbol Max. Unit RJC 1.25 0 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 0 TO-3 (TO-204AA)* C/W 0 1) Derate linearly 29 mW/ C for T A > +25 C 2) Derate linearly 0.8 W/0C for T C > +750C *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit ICEO 250 250 Adc ICEX 500 Adc IEBO 200 200 Adc VBE(sat) 1.5 2.0 Vdc VCE(sat) 0.8 2.5 Vdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc VCE = 400 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc; VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 2N3902 2N5157
2 Pages, 48 KB, Original
2 Pages, 48 KB, Original2N5157 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Emitter-Base Voltage Collector-Base Voltage Base Current Collector Current Total Power Dissipation Symbol VCEO VEBO VCBO IB IC @ TA = +250C (1) @ TC = +750C (2) Operating & Storage Temperature Range PT Tj, Tstg 2N3902 2N5157 400 500 5.0 6.0 700 2.0 3.5 5.0 100 -65 to +200 Unit Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 1) Derate linearly 29 mW/0C for TA > +250C 2) Derate linearly 0.8 mW/0C for TC > +750C Symbol RJC Max. 1.25 Unit C/W TO-3 (TO-204AA)* 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS Characteristics Symbol Min. Max. Unit ICEO 250 250 Adc ICEX 500 Adc IEBO 200 200 Adc VBE(sat) 1.5 2.0 Vdc VCE(sat) 0.8 2.5 Vdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 325 Vdc VCE = 400 Vdc Collector-Emitter Cutoff Current VBE = 1.5 Vdc; VCE = 700 Vdc Emitter-Base Cutoff Current VEB = 5.0 Vdc VEB = 6.0 Vdc 2N3902 2N5157 2N3902
2 Pages, 33 KB, Original32 450V |350V | 6V 5A 150C 80WC 5M [LSOP 10/75 2. 5A| AHE |MOB : : 1 2N6500 NS | TO66 | L143 120V | 90V | 7V 4A 200C 35WC 60M p75P 15MN 3A]RHS }RCB | BOY79 | 2N5050 1 2N6510 NS | TO3 LOS 250 |200V | 6V TA 200C 120WC 3m Boor | 10/50 3A] RHE JRCB | BUX16C | 2N5157 1 2N6511 NS | TO3 LO5 300V {250V | 6V 7A 2006 120WC 3m POOP | 10/50 4A] RHE /RCB | BUX16C | 2N5157 1 2N6512 NS | TO3 LOS 350V (300V | 6V 7A 200C 120WC 3M ROOP 10/50 SA}RHE |RCB | BUX16C | 2N5157 1 2N6513 NS 4 TO3 LO5 400V ]350V | 6V TA 200C 120WC 3M POOP 10/50 4A) RHE |RCB | BUX16C | 2N5157 1 2N6514 NS | TO3 LO5 350V |300V | 6V 7A 200C 120WC 3M BOOP | 10/50 SA|RHE |RCB | BUX16C | 2N5157 1 2N6515 NS | TO92 | L14 250 |250V | 6V | 500MA 150C | 625MWF 40M | 6P |45/220 50MA|RME |MOB | BFTS9 | 2N6517 2 2N6516 NS {| TO92 | L14 300V |300V | 6V {| 500MA 150C | 625MWF 40M | 6P 140/200 5OMA|RME {MOB | BFT59 | 2N6517 2 2N6517 NS | TO92 | L14 350 |350V | 6V | SOOMA 150C | 625MWF 40M | 6P 120/100 50MA
1 Pages, 88 KB, ScanM 15/45 2A} RHE {SEU 0 BDY25B NS } T03 LOS 200V j140V J10V 6A 200C 87WC 10M 30/90 2A| RHE |SEU 0 BOY25C NS | TO3 LOS 200V |140V |10V 6A 200C 87WC 10M 75/180 2A] RHE [SEU . 0 BbDY26 NS | 103 LOS 300V j180V |10V 6A 200C 87WC 10M 15/180 2A| RHE |SEU} BDY28 j 2N5157 0 BDY26A NS | TO3 Los 300V |180V /10V 6A 200C 87WC 10M 15/45 2A| RHE JSAS] BUY88 | 2N6308 2 BDY26B NS | 103 LO5 300V |180V /10V 6A 200C 87WC 10M 30/90 2A] RHE |SAS] BUX12 | 2N6308 2 BDY26C NS | TO3 LO5 300V 4180V [10V 6A 200C 87WC 10M 75/180 2A! RHE |SAS | BUX12 2N6308 2 BoY27 NS | T03 LO5 400V |200V |10V 6A 2000 87WC 10M 15/180 2A] RHE [SEU] BDY28 2N5157 0 BDY27A NS | TO3 LOS 400V j200V |10V 6A 200C 87WC 10M 15/45 2A| RHE |SAS{ BU134 | 2N6308 2 BDY27B NS [| TO3 Los 400V ;200V /10V 6A 200C 87WC 10M 30/90 2A] RHE ISAS | BUX14 | 2N6308 2 BOY27C NS | TO3 Los 400V |200V |10Vv 6A 2000 87WC 10M 76/180 2A] RHE {SAS : 2 BoY23 NS | TO3 LOS 500V /250V |10V 6A 200C 87WC 10M 15/180 2A] RHE [SEU] BDY28 2N5157 0 BDY2BA NS | TO
1 Pages, 85 KB, ScanS | TOS 104 360V /325V | 6V | LOOMA 175C | 8Q0MWF 15M | 12P 7 25/250 3OMA] TVE;MOU| BF259 | 2N3439 1 MJ423 NS | TO3 05 400V |325v | 5V 10A 150C 125WC 1OMN 2. 5A) AHE|MOU} BUX13 i M5424 NS | TO3 LOS 700V | 350V | 6 5A 150C 10QWC 10MN 2.5A) AHE}MOU| BUX14 | 2N5157 1 MJ425 NS | TO3 LOS 700V }400V | 6V 5A 150C 100WC 10MN 2.5A) AHE|MOU; BUX15 | 2N5157 1 MJ431 NS | TO3 LOS 400V | 325V | SV LOA 150C 125Wo 15/35 2.5A] AHE}MOU] BUX14 | 2N5157 1 MJ450 PS | TO3 Los 40v | 40V | 5 30A 200C 150WC 2M : 20MN 10A] AHG|MOU] BDX20 : 1 MJ480 NS | TO3 Los 40v | 40v | 5V 4A 200C 87WC 4M 1200P 10MN 3A} AHP} MOU] BDY24 | 2N3448 1 MJ481 NS | 193 LOS 60v | 60V | 5V 4A 2000 87WC 4M |200P i0MN 3A} AHP}MOU| BDY24 | 2N3448 1 MJ490 PS | TO3 05 40v | 40V ft 5V 4A 2000 87WC 4M |200P 10MN 3A) AHP}MOU| BDX20 | 2N4906 1 MJ491 PS | TO3 105 60V | 60v | 5V 4A 200C 87WC 4M |200P 10MN 3A] AHP]MOU] BDX20 | 2N4906 1 MJ500 PS | TO59 ] 163 0V } 6OV | 5V 7A 200C 6OWC 30M ]300P 15MN SA; RHS} MOU 1 MJ501 PS | TO59 | L
1 Pages, 90 KB, ScanN5795 PS | TO77 No1 | 60V 60V 5V | 600mA 600mWF 200M 40/120 MOT | BFX11 2N4015 2N5796 PS | TO77 No1 | 60V 60V 5V | 600mA 600mWF 200M gPo 100mn 150mA | DUA | MOT | BFX11 2N4015 2N5804 NS j} TOS LoS | 300V 228V BV 5A V1OWC 15M - 10/100 5A RHE | RCA | BUX16C 2N5157 2N5805 NS | TOS Lo5 | 375V 300V 6V [5A V10WC 15M - 10/100 5A RHE ; RCA | BUX16C 2N5157 2N5810 NS | X10 L20 | 35V 25V 5V | 750mA 500mMWE 100M 45mn GES | BC338 2N5818 2N5811 PS | X10 20 | 35V 25V 5V | 750mA 500mWF 100M 45mn GES | BC328 2N5819 2N5812 NS | X10 L20 | 35V 25V BY f750mA 500mWF 135M 15P 60mn 500mA | AMG] GES | BC338 2N5818 2N5813 PS | X10 L20 | 35V 25V 5V | 750mA 500mWF 135M 15P 60mn 500mA | AMG} GES | BC328 2N5813 2N5814 NS | X10 L20 | 50V 40V 5V +} 750mA 500mWE 100M 15P 60/120 2mA AMG) GES | 8C337 2N5818 2N5815, Ps | x10 L20 | 50V 40V 5V | 750mA 500mWEF 100M 60/120 GES | BC327 2N5819 2N5816 NS | X10 L20 | 50V 40V SV | 750mA 500mWF 120M GES | 8C337 2N5818 2N5817 PS | X10 L20. | SOV 40V 5V | 750mA 500mWF 120M GES | B
1 Pages, 87 KB, Scan 1 BUX14 NS | TO3 LOS 450V [400V | 7V 10A 200C 150WC 8M 15/60 3A] RHH {SAS {| BUX24 1 BUX15 NS | TO3 LOS 500V |500V ; 7V 8A 200C 150WC 8M 15/60 2A] RHE |SAS | BUX25 1 BUX16 NS | TO3 LOS 250V |200V | 6V 5A 200C 1LoOWwc 5M 1.50P 15MN 2A] RHE |RCB | BUXI6C | 2N5157 1 BUX16A NS | TO3 LOS 325V ;250V | 6V 5V 200C 100WC 5M {150P 15MN 2A) RHE |RCB |} BUX16C | 2N5157 1 BUX16B NS | TO3 LOS 375V |300V | 6V 5A 200C 100WC 5M {L50P 12MN 2A| RHE (RCB | BUX16C ) 2N5157 1 BUX16C NS | TO3 LOS 425V |350V | 6V 5A 200C 100wc 5M [L50P 12MN 2A| RHE |RCB | BUX16C | 2N5157 1 BUX17 NS | TO3 LOS 250V }150V | 6V 10A 200C 150WC 2M5 7MN 10A] AHE }RCB | BUX17C 1 BUXL7A NS | TO3 LO5 350V |250V | 6V 10A 200C 150WC 2M5 7MN 10A!AHE |RCB | BUX17C 1 BUX17B NS {| TO3 LOS 400V }300V | 6V 10A 200C 150WC 2M5 7MN 10Aj AHE |RCB | BUX17C 1 BUX17C NS | TO3 LO5 450V |350V | 6V 1OA 200C 150WC 10A 7MN 10A] AHE |RCB | BUX17C 1 BUX18 NS | TO3 LOS 300V |200V | 6V BA 200C 80wc 7MN 6A] AHE [RCB } BUX17C 1 BUX1
1 Pages, 83 KB, Scan2N5157 N-P-N SILICON POWER TRANSISTOR HIGH VOLTAGE, HIGH FORWARD AND REVERSE ENERGY DESIGNED FOR INDUSTRIAL AND MILITARY APPLICATIONS 100 W at 75C Case Temperature @ 700 V Collector-Emitter Off-State Voltage @ Min VipR)}ceo of 400 V Max toff of 1.7 us atIC=1A Typ VCE(sat) of 0.3 V at IC =3.5A Typ ft of 5 MHz at 12V,0.2A *mechanical data ALL JEDEC TO-3 DIMENSIONS AND NOTES ARE APPLICABLE THE COLLECTOR IS IN ELECTRICAL CONTACT WITH THE CASE 1.573 Max \ aso 0.202 MIN, 0.525 8 MAK 2 0.250 pase 2 LEADS + 2 - EMITTER Ae dt 1.050 MAX ae ~ 9.225 Th Oi + + OA 0208 0.440 |" oe pia 0.100 f MAX GOTH ENDS 0.135 MAK CASE TEMPERATURE 1 ~ Base MEASUREMENT POINT DIMENSIONS ARE IN INCHES absolute maximum ratings at 25C case temperature (unless otherwise noted) Collector-Emitter Voltage (Vgg = 1.5 V, See Note 1) *Collector-Emitter Voltage (Base Open, See Note 1) *Emitter-Base Voltage "Continuous Collector Current Continuous Base Current : . Safe Operating Area at (or below) 75C Case Temperature Continuous Device Di
6 Pages, 148 KB, Scan
