N2222ACSM4R 2N2222ACSM4R-JQR-B 2N2896CSM4 2N2898CSM4 2N2907AC3A 2N2907AC3B 2N2907AC3C 2N2907ACSM4 2N2907ACSM4R 2N3019CSM4 2N3114CSM-JQR 2N3114CSM4 2N3209CSM4 2N3439CSM4 2N3439CSM4R 2N3440C3 2N3501CSM4 2N3637CSM4 2N3735CSM4 2N4033CSM4 2N5415CSM4 2N5415LCC3 2N5416CSM4 BCX17CSM4 BCX19CSM4 BF257CSM4 BF258CSM4 BF259CSM4 SML2308CSM4 SML2955CSM4 ZTX656CSM4 ZTX657CSM4 ZTX756CSM4 ZTX757CSM4 PRODUCT Status 2N2221 2N2221A 2N2221ACECC-O 2N2221AX 2N2221CECC-O 2N2222 2N2222A 2N2222ACECC-O 2N2222CECC-O 2N2368 2N2369 2N2369A 2N2411 2N2411X 2N2412 2N2412BX 2N2412X 2N2483 2N2484 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3 (MO-041BA) 50V 0.8A 100 NPN LCC3R 40V 0.8A 100 NPN LCC3R 40V 0.8A 100 NPN LCC3 (MO-041BA) 90V 1A 60 NPN LCC3 (MO-041BA) 65V 0.5A 50 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 PNP LCC3 (MO-041BA) 60V 0.6A 100 LCC3 (MO-041BA) 80V 1A 80 NPN LCC3 (MO-041BA) 150V 0.1A 30 NPN LCC3 (MO

V | 200MA 1500 1.25WC 50M | 4P5 25MN 5MA! RME|TIB : : 2 BF422 NS | TO92 L74 250V |250V 5V_ | 200MA 150C | 830MWF 60M | 1R6 5OMN 25MA] RME|TFK| BF299 | 2N4927 2 BF423 PS | TO92 L74 250V | 250V 5V { 200MA 150C ; &30MWF 60M | 1R6 5OMN 25MA] RME|TFK{} BFT19B} 2N5416 2 BF424 PS | TOS2 L74 30V 30V | 4V 25MA 150C | 250MWF 300M | 1R3 20MN IMA; VLA/ITB] BF506 | 2N5771 2 BF435 PS | TOS2 La. 160V | 160V 5V | 200MA 150C | 625MWF 80M} 1R8 | 50/400 1OMA] RME|TIB} BFT44 | 2N5416 2 BF436 PS | TO92 L21 250V | 250V 5V | 200MA 150C | 625MWF 80M | 1R8 | 40/350 1OMA| RME|TIB} 8FT44 | 2N5416 2 8F437 PS | TOg2 L21 300V | 300V 5V | 200MA 150C | 625MWF 80M | 1R8 | 30/300 10MA| RME;TIB| BFT44 | 2N5416 2 BF439 PS | TO72 LO6 20V | 20V 3V 10MA 1500 1OOMWE 900M 1P 30MN 2MA] ULA|MOB| BF324 1 BF440 PS X10 Lig 40V | 40V | 4V 25MA 150C | 300MWF 125M | ORS | 60/220 1MA] FRH|TFK 0 BF441 PS X10 Lig 40V 40V 4v 25MA 150C SOOMWF 125M | ORB | 30/125 1MA| FRM] TFK QO BF450 PS | X10 L19 40v | 40v | 4

t shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for

2N5416 FEATURES PINNING Low current (max. 200 mA) PIN DESCRIPTION High voltage (max. 300 V). 1 emitter 2 base APPLICATIONS 3 collector, connected to case Switching and linear amplification in military, industrial and consumer equipment. DESCRIPTION Li P ; PNP high-voltage transistor in a TO-39 metal package. (3 - i= a 2 ) MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Vocso collector-base voltage open emitter 2N5415 - -200 Vv 2N5416 _ -350 Vv VecEo collector-emitter voltage open base 2N5415 _ 200 V 2N5416 - 300 Vv low peak collector current - 400 mA Prot total power dissipation Tamb S50 C ~ 1 WwW hee DC current gain lo = ~-50 mA; Veg = -10 V 2N5415 30 150 2N5416 30 120 fy transition frequency lo = -10 mA; Veg = 10 V; f = 5 MHz 15 - MHz 1997 May 21 183Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 LIMITING VALUES In accordance with the A

ion shall be completed by 18 Oct 95. MIL-S-19500/485E 18 Aprit 1995 SUPERSED ING MIL-S-19500/485D 15 November 1994 | The documentation and process | | MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5416, AND 2N5416S JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a PNP, silicon, low-power transistor. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance are provided for die (element evaluation). 1.2 Physicat_ dimensions. See figures 1 tsimilar to TO-5), and 2 for JANHC and JANKC (die} dimensions. 1.3. Maximum ratings. | Pr | Type Ta = #25C Te = #25C Veso | Yceo | Veso Ic Tstg and Ty Reic 4s es | W W V_de V_de V_de Ade Cc C/W | 2N5415,$ 0.75 10 200 200 6 1 -65 to +200 17.5 | |_2

2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5415 through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. TO-205AD (TO-39) Package (See part nomenclature for all available options.) * RoHS compliant commercial version Also available in: TO-5 package (long-leaded) 2N5415 - 2N5416 APPLICATIONS / BENEFITS * * * U4 package General purpose transistors for low power applications requiring high frequency switching. Low package profile. Military and other high-r

2N5416 | 2N3439 | 23440 | Unit Coltectar-Emlttar Vottage Vceo 200 300 360 250 Vde Collector-Base Voltage VoBo 200 350 480 300 Vde Emittar-Basa Voltage VERO 46 6.0 7.0 7.0 Vde Base Current IB 0.5 Ade Collector Currant le 4.0 Ada Continuous Total Davica Dissipation Pp @ Ta = 26C _ 1.0 Watta Gerate above 26C =- 5.7 mWrc Total Device Dissipation Pr @Tc = 26C 10 5.0 Watts Derate above 25C 57 28.6 mwirc Tota! Device Dissipation Po @& Ta = soc 1.0 - Watts Darate above S0C 67 _ mWPc Operating and Storage Ty. Tatg 85 to +200 * Junction Tamperature Range THERMAL CHARACTERISTICS 2N5415 | 2NadaS Characteriatic Symbol | 2Ns4616 | 2N3440 Unit Thermal Resistance, Junction ta Case Rac 17.6 36 "CA Thermal Reslstanca, Junction to Ambient Rasa 160 175 "CAV ELECTRICAL GHARACTERISTICS (Ta = 26C unless otherwise noted.} NPN PNP 2N3439 2N54i5 2N3440 2N5416 3 Collector 9 Collector 1 Emitter JAN, JTX, JTXV AVAILABLE CASE 79-04, STYLE 1 TQ-3S (TO-205AD} 2 Base 1 Emitter 3 at HIGH VOLTAGE AMPLIFIERS | Characte

2N5416 (R) SILICON PNP TRANSISTORS STMicroelectronics PREFERRED SALESTYPES PNP TRANSISTORS DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value 2N5415 Unit 2N5416 V CBO Collector-Base Voltage (I E = 0) -200 -350 V V CEO Collector-Emitter Voltage (I B = 0) -200 -300 V V EBO Emitter-Base Voltage (I C = 0) IC Collector Current IB Base Current o P tot Total Dissipation at T c 25 C P tot Total Dissipation at T amb 50 o C T stg Storage Temperature -4 -6 V -1 A -0.5 A 10 W 1 -65 to 200 W o C 1/4 2N5415 / 2N5416 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max o 17.5 175 o C/

2N5416U4 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longleaded TO-5, short-leaded TO-39 and low profile UA packaging. U4 Package Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5415 through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. * Also available in: (See part nomenclature for all available options.) TO-5 package RoHS compliant (long-leaded) 2N5415 - 2N5416 TO-39 (TO-205AD) package (short-leaded) 2N5415S - 2N5416S APPLICATIONS / BENEFITS * * * General purpose transistors for low power applications requiring high frequency switching Low package profile Milita

2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 PINNING FEATURES * Low current (max. 200 mA) PIN * High voltage (max. 300 V). 1 emitter 2 base 3 collector, connected to case APPLICATIONS DESCRIPTION * Switching and linear amplification in military, industrial and consumer equipment. 1 handbook, halfpage 3 2 DESCRIPTION PNP high-voltage transistor in a TO-39 metal package. 2 3 1 MAM334 Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage CONDITIONS -200 V - -350 V 2N5415 - -200 V 2N5416 - -300 V - 400 mA - 1 W 2N5415 30 150 2N5416 30 120 15 - collector-emitter voltage open base ICM peak collector current Ptot total power dissipation Tamb 50 C hFE DC current gain IC = -50 mA; VCE = -10 V transition frequency 1997 May 21

2N5416 SILICON PNP TRANSISTORS a SGS-THOMSON PREFERRED SALESTYPES a PNP TRANSISTOR DESCRIPTION The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. 3 These devices are particularly suited as drivers in 1 high-voltage low current inverters, switching and 2 series regulators. TO-39 INTERNAL SCHEMATIC DIAGRAM Co (2) (1) B EO (3) SC08810 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit 2N5415 2N5416 VicBo Gollector-Base Voltage (le = 0) -200 -350 Vv VcEo Gollector-Emitter Voltage (lp = 0) -200 -300 Vv VEBO Emitter-Base Voltage (Ic = 9) -4 -6 Vv Ic Collector Current -4 A lB Base Current -0.5 A Prot | Total Dissipation at Te < 25 C 10 Ww Prot Total Dissipation at Tamp < 50 C 1 WwW Tstg Storage Temperature -65 to 200 C Tj Max. Operating Junction Temperature 200 C April 1997 1/4 2N5415/2N5416 THERMAL DATA Fithj-case | Thermal Resistance Junct