2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longer leaded TO-5 and low profile U4 and UA packaging. Important: For the latest information, visit our website http://www.microsemi.com. FEATURES * JEDEC registered 2N5415 through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. TO-205AD (TO-39) Package (See part nomenclature for all available options.) * RoHS compliant commercial version Also available in: TO-5 package (long-leaded) 2N5415 - 2N5416 APPLICATIONS / BENEFITS * * * U4 package General purpose transistors for low power applications requiring high frequency switching. Low package profile. Military and other high-reliability applications. (

2N5416S Generic Part Number: 2N5416S Type 2N5416S Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/485 Features: * General-purpose low power amplifier transistor which operates over a wide temperature range. * Housed in TO-39 case. * Also it will be available in chip form using the TBD chip geometry. * TO-39 The Min and Max limits shown are per MIL-PRF-19500/485 which Maximum Ratings TC = 25oC unless otherwise specified Rating Symbol Rating Unit Collector-Emitter voltage VCEO 300 V Collector-Base Voltage VCBO 350 V Emitter-Base voltage VEBO 6.0 V Collector Current, Continuous IC 1.0 A Power, TA = +25oC PT 0.75 Watt Power, TC = +25oC PT 10 Watt Thermal Resistance RJC 17.5 Operating Junction Temperature TJ -65 to +200 TSTG -65 to +200 Storage Temperature o C/W o C o C Data Sheet No. 2N5416S Electrical Characteristics o TC = 25 C unless otherwise specified OFF Characteristics Collector-Emitter Breakdown Voltage IC = 50 mA, IB = 5 mA, L = 25 mH,

completed by 18 Oct 95. MIL-S-19500/485E 18 Aprit 1995 SUPERSED ING MIL-S-19500/485D 15 November 1994 | The documentation and process | | MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5416, AND 2N5416S JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Depart- ments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the detail requirements for a PNP, silicon, low-power transistor. Four levels of product assurance are provided for each device type as specified in MIL-S-19500. Two levels of product assurance are provided for die (element evaluation). 1.2 Physicat_ dimensions. See figures 1 tsimilar to TO-5), and 2 for JANHC and JANKC (die} dimensions. 1.3. Maximum ratings. | Pr | Type Ta = #25C Te = #25C Veso | Yceo | Veso Ic Tstg and Ty Reic 4s es | W W V_de V_de V_de Ade Cc C/W | 2N5415,$ 0.75 10 200 200 6 1 -65 to +200 17.5 | |_2N5416,S 0.75 10 350 300 6 1 ~65

all be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for

all be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions for

2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Operating & Storage Temperature Range Symbol 2N5415 2N5416 Units VCEO VCBO VEBO IC 200 200 300 350 Vdc Vdc Vdc Adc W W 0 C 6.0 1.0 0.75 10 -65 to +200 PT Top, Tstg TO- 5* 2N5415, 2N5416 THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly 4.28 mW/0C for TA > +250C 2) Derate linearly 57.1 mW/0C for TC > +250C Max. 17.5 Unit C/W 0 2N5415S, 2N5416S TO-39* (TO-205AD) *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit 50 1.0 50 1.0 Adc mAdc Adc mAdc OFF CHARACTERISTICS Collector-Emitter Cutoff Current VCE = 150 Vdc VCE = 200 Vdc VCE = 250 Vdc VCE = 300 Vdc Emitter-Base Cutoff Current VEB = 6.0 Vdc Collector-Emitter Cutoff Current VCE = 200 Vdc, VBE = 1.5 Vdc VCE = 300 Vdc, VBE = 1.5 Vd

205AD/TO-39: Industry Type: 40537S STI Type: 40537L Notes: *BVCER Polarity: PNP Power Dissipation: 1.0 Tj: 200 VCBO: VCEO: 55* hFE min: 50 hFE max: 300 hFE A: 50m VCE: 1.1 VCE A: 50m hfe: fT: 100 Case Style: TO-205AD/TO-39: Industry Type: 40537L STI Type: 2N5416S Notes: *BVCEO Polarity: PNP Power Dissipation: 10 VCBO: 350 VCER: 300* ICBO: 280 ICBO A: 50 hFE: 30 hFE A: 50 VCE: 2.0 VBE: 1.5 IC: 50 COB: 15 fT: Case Style: TO-205AD/TO-39 Industry Type: 2N5416S STI Type: 40538 Notes: *BVCER Polarity: PNP Power Dissipation: 1.0 Tj: 200 VCBO: VCEO: 55* hFE min: 15 hFE max: 90 hFE A: 500m VCE: 2.0 VCE A: 500m hfe: fT: 100 Case Style: TO-205AD/TO-39: Industry Type: 40538 STI Type: 40539L Notes: *BVCER Polarity: NPN Power Dissipation: 5.0 Tj: 200 VCBO: VCEO: 55* hFE min: 15 hFE max: 90 hFE A: 500m VCE: 2.0 VCE A: 500m hfe: fT: 100 Case Style: TO-205AD/TO-39: Industry Type: 40539L STI Type: 40539 Notes: *BVCER Polarity: NPN Power Dissipation: 5.0 Tj: 200 VCBO: VCEO: 55* hFE min: 15 hFE max: 90

be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER TYPES: 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, AND 2N5416U4, JAN, JANTX, JANTXV, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH, JANHCB, JANHCD, JANKCB, JANKCD, JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. Provisions fo

600 SE! 11.750 11.340 11.650 1.180A0 0.870 0.780 2.100 F 8.200 F 20.550 F 1200 . 1.260 0.980 F AT AT AT 2N5416 1.600 1.510 0.980 0.700 1.550 1.400 1.400 2.050 1.500 1.000 AS! GTC MOT NJS NSC PHIL Q52 SE! AT AT K 1.150 1.400 F 1.078 Bc 1.680 Ao 1.110 0.950 2N5416S MOT 2.700 19.290 JAN MOT 5.000 35.710 JANIX PPC 29.000 SCA 25.560 37.050 SEI 27.000 18.000 30.830 PPC 40.000 SCA 32.660 41.080 SE1 GTC 17.800 PPC 25.000 SCA 21.300 SE! 21.350 MOT 17.000 12.140 JANTXV 2.700 F 5.000 F 17.000 F AT AT AT 2N5417 5.750 5.550 4.750 4,580 0.300 0.290 0.240 0.230 0.360 0.350 0.280 0.270 1.500 1.840 1,500 1.450 1.400 1.150 1.540 1.100 1.060 1.000 0.470 0.450 0.350 0.340 1.950 1,880 1,600 1.540 NJS 22.000 Q52 21.230 18.000 17.370 NJS Q52 2N5418 NJS Q52 2N542 1.050 1.400 1.000 0.970 0.950 NJS Q52 AS! GTC NJS Q52 SEI 2N5420 NJS Q52 2N5422 NJS QS2 2N5423 37.000 23.000 34.190 14.840 22.500 15.000 17.750 2N5413 7.100 4.800 7.700 7.430 7.900 5.400 5.210 5.500 2N5424 NJS 23.000 Q52 22.200 19.000 18.340 2N5425 NJS 15.000 Q

2N5415 - 2N5416 APPLICATIONS / BENEFITS * * * General purpose transistors for low power applications requiring high frequency switching. Low package profile Military and other high-reliability applications TO-39 (TO-205AD) package (short-leaded) 2N5415S - 2N5416S U4 package (surface mount) 2N5415U4 - 2N5416U4 MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol 2N5415UA 2N5416UA Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R JA 234 o C/W Thermal Resistance Junction-to-Solder Pad R JSP 80 o C/W PT 0.75 2 Total Power Dissipation (1) @ T A = +25 C (2) @ T SP = +25 C Notes: 1. Derate linearly 4.29 mW/C for TA > +25C 2. Derate linearly 12.5 mW/C for T SP > +25 C T4-LDS-0305-3, Rev. 1 (7/30/13) (c)2013 Microsemi Corporation C W MSC - Lawrence 6 Lake St

00/200/ 4 | O05 | 0.05 150 | 2N5416 PPG, Inc. TO-5 STD: 23823. 10 | 1 =: 350 300! 6 0.5 | 0.05 120 JAN2N5416 PPC, Inc. . TO-5 STD_485 23824 10 | 1 | 350; 300! 6 O05 |0.05., 120 JANS2N5416 PPC, Inc. TO-5 -STD 485 23827; 10. 1 | 350/300 6 0.5 10.05. 120 JANS2N5416S PPC, Inc. TO-5 STD! 485 .23828| 10 1 | 350 300, 6 05 0.05 120 JANTX2N5416 PPC, inc. - TO-5 STD: 485 23825! 10 1 ' 350 300/ 6 : O85 |0.05 120 JANTXV2N5416 PPC, Inc. | TO-5 STD _485 23826: 10. 1 350 300/ 6 | O85 |0.05 120 | 2N5323 PPC, Inc. TO-5 -STD 123804: 10 2 #75150! 5, 12 0.5 250 2N5322 PPC, Inc. TO-5 STD 23803 10 =62 100' 75: 7 | #+O5 0.5 | 130 ' 2N5783 PPC, Inc. TO-5 |STD! _23863' 10 35 45 40 35) 1 16. 100 | 2N5782 PPC, inc. TO-5 STD 123862, 10 235 65 50 55 O75 |12~ mie 2N5781 PPC, Inc. _ TO-5 STD 23861. (10 | 35 80 ' 65 5 | O5 4 100 2N6190 PPC, Inc. | TO-5 STD 23896 10 ' 5 : 80: 80 6 1.2 2 120 : 2N6191 PPC, Inc. | TO-5 STD 23897, 10 5 ' 80: 80 6 1.2 2 240 2N6192 PPC, Inc. | TO-5 'STD! .23898 10 | 5 | 100':100 6 1.2 2 120 ' 2N6193 P

through 2N5416 series * JAN, JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. TO-5 Package (See part nomenclature for all available options.) * RoHS compliant Also available in: TO-205AD (TO-39) package (short-leaded) 2N5415S - 2N5416S APPLICATIONS / BENEFITS * * * General purpose transistors for low power applications requiring high frequency switching. Low package profile Military and other high-reliability applications U4 package (surface mount) 2N5415U4 - 2N5416U4 UA package (surface mount) 2N5415UA - 2N5416UA MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol 2N5415 2N5416 Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R JA 234 o C/W Thermal Resistance Junction-to-Case R JC 17.5 o C/W PT 0.75 10 Total Power Dissip

JANTX, JANTXV, and JANS qualifications are available per MIL-PRF-19500/485. * Also available in: (See part nomenclature for all available options.) TO-5 package RoHS compliant (long-leaded) 2N5415 - 2N5416 TO-39 (TO-205AD) package (short-leaded) 2N5415S - 2N5416S APPLICATIONS / BENEFITS * * * General purpose transistors for low power applications requiring high frequency switching Low package profile Military and other high-reliability applications UA package (surface mount) 2N5415UA - 2N5416UA MAXIMUM RATINGS @ T A = +25 C unless otherwise noted Parameters / Test Conditions Symbol 2N5415U4 2N5416U4 Unit Collector-Emitter Voltage V CEO 200 300 V Collector-Base Voltage V CBO 200 350 V Emitter-Base Voltage V EBO 6.0 6.0 V IC 1.0 1.0 A Collector Current Operating & Storage Junction Temperature Range T J , T stg -65 to +200 Thermal Resistance Junction-to-Ambient R JA 145 o C/W Thermal Resistance Junction-to-Case R JC 12 o C/W PT 1 15 Total Power Dissipation (1) @ T A = +25 C (2) @ T C = +25 C Notes:

2N5153L /545 PNP PWR 80V 70-200, 2.5A JANS2N5153U3 /545 PNP PWR 80V 70-200, 2.5A JANS2N5415 /485 PNP PWR 200V 30-120, 50mA JANS2N5415S /485 PNP PWR 200V 30-120, 50mA JANS2N5415UA /485 PNP PWR 200V 30-120, 50mA JANS2N5416 /485 PNP PWR 300V 30-120, 50mA JANS2N5416S /485 PNP PWR 300V 30-120, 50mA JANS2N5416UA /485 PNP PWR 300V 30-120, 50mA JANS2N6193 /561 PNP PWR 100V 60-240, 2.0A JANS2N6193U3 /561 PNP PWR 100V 60-240, 2.0A JANS2N7372 /612 PNP PWR 80V 70-200, 2.5A Rated Ic Package 10.0A 10.0A 10A 10A 10A 10A 10A 10A 10A 10A 10A 10A 10A 10A 5A 5A 5A 5A 5A 5A 5A 5A 5A 10A 10A 10A 10A 10A 15A 15A 15A 15A 5A TO-5 TO-39 TO-59/I TO-59/I TO-39 TO-5 SMD.5 TO-39 TO-5 SMD.5 TO-5 TO-39 TO-5 TO-39 TO-39 SMD.5 TO-66 TO-66 TO-5 TO-39 SMD.5 TO-5 TO-39 TO-3 TO-254AA TO-3 TO-254AA TO-3 TO-3 TO-254AA TO-3 TO-254AA TO-254AA Rated Ic Package 4.0A 4.0A 3.0A 3.0A 3.0A 3.0A 10A 10A 10A 10A 10A 10A 1A 1A 1A 1A 1A 1A 5A 5A 5A TO-66 TO-66 TO-5 TO-39 TO-5 TO-39 TO-39 TO-5 SMD.5 TO-39 TO-5 SMD.5 TO-5 TO-39 UA(LCC4) TO-5 TO-39