comply with this revision shall be completed by 5 December 1997. INCH POUND MIL-PRF-19500/510C 5 September 1997 SUPERSEDING MIL-S-19500/510B 18 April 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N6249, 2N6250, AND 2N6251 JAN, JANTX, JANTXV, JANS, JANHC AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN, silicon power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (Similar to TO-3) and figure 2 (JANHC and JANKC). 1.3 Maximum ratings. PT 1/ TA = +25(C W 2N6249 5.5 2N6250 5.5 2N6251 5.5 Type PT 2/ TC = +25(C W 175 175 175 VCBO V dc 300 375 450 1/ Derate linearly at 34.2 mW/(C for TA > 25(C. 2/ Derate
17 Pages, 139 KB, Original this document shall be completed by 6 July 2009. INCH POUND MIL-PRF-19500/510F 6 April 2009 SUPERSEDING MIL-PRF-19500/510E 12 May 2005 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER, TYPE 2N6249, 2N6249T1, 2N6249T3, 2N6250, 2N6250T1, 2N6250T3, 2N6251, 2N6251T1, 2N6251T3, JAN, JANTX, JANTXV, AND JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for NPN silicon, power transistors. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device type. 1.2 Physical dimensions. See figure 1 (similar to TO-3), figure 2 (JANHC and JANKC), figure 3 (TO-25
28 Pages, 380 KB, Original2N6250 - 2N6251 HIGH VOLTAGE NPN SILICON POWER TRANSISTORS The 2N6249 - 2N6250 - 2N6251 are NPN silicon transistors in Jedec TO-3. They are designed for high voltage inverters, switching regulators and line operated amplifier applications. Especially well suited for switching power supply applications. * * * * High Voltage Breakdown Rating Low Saturation Voltages Fast Switching Capability High Es/b Energy Handling Capability ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO #Collector-Emitter Voltage (1) VCER #Collector-Emitter Voltage (1) VCB Collector-Base Voltage (1) VEB Emitter-Base Voltage RBE=50 Continuous (1) IC Collector Current Peak Continuous (1) IB Base Current Peak Continuous IE Emitter Current Peak COMSET SEMICONDUCTORS Value 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6250 2N6251 2N6249 2N6
3 Pages, 375 KB, Original2N6250, 2N6251 HARRIS SEMICOND SECTOR SBE D MM 4302271 OO40527 756 MBHAS 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial Equipment Features: a High voltage ratings: Veso = 450 V (2N6251) . 975 V (2N6250) 300 V (2N6249) a High dissipation rating: Py = 175 W a Low saturation voltages a Maximum safe-area-of-operation curves The 2N6249, 2N6250 and 2N6251 are multiple epitaxial silicon n-p-n power transistors. Multiple-epitaxial con- struction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. These devices use the popular JEDEC TO-204AA package; they differ mainly in voltage ratings, leakage-current limits, and Vce(sat) ratings. The exceptional second-breakdown capabilities and high voltage-breakdown ratings make these transistors especially suitable for offline inverters, switching regulators motor controls, and deflection circuit applications. The high gain and high Ess e
6 Pages, 411 KB, Scan2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High voltage *Low saturation voltage *Fast switching capability APPLICATIONS *For high voltage inverters ,switching regulators and line operated amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS 2N6249 VCBO VCEO Collector-base voltage Collector-emitter voltage 2N6250 Open emitter 375 2N6251 450 2N6249 200 2N6250 Emitter-base voltage UNIT 300 Open base 2N6251 VEBO VALUE 275 V V 350 Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A IB Base current 10 A PT Total power dissipation 175 W Tj Junction temperature 150 Tstg Storage temperature -65~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case JMnic MAX UNIT 1.0 /W Product Specification www.jmnic.com 2N6249 2N6250
3 Pages, 40 KB, Original
3 Pages, 40 KB, Original-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6249T1 2N6250 2N6250T1 2N6251 2N6251T1 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N6249 2N6250 2N6251 Unit 2N6249T1 2N6250T1 2N6251T1 Collector-Emitter Voltage VCEO 200 275 350 Vdc Collector-Base Voltage VCBO 300 375 450 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 10 Adc Base Current IB 5.0 Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) PT 6.0 175 W Top, Tstg -65 to +200 C RJC 1.0 C/W Operating & Storage Junction Temperature Thermal Resistance, Junction-to-Case TO-3 (TO-204AA) NOTES: (1) Derate linearly at 34.2 mW/C for TA > +25C (2) Derate linearly at 1.0 mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, un
5 Pages, 180 KB, Original2N6250, 2N6251 3875081 GE SOLID STATE 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial Equipment Features: 8 High voltage ratings: Veso = 450 V (2N6257) 375 V (2N6250) | | 300 V (2N6249) = High dissipation rating: P;=175W = Low saturation voltages = Maximum safe-area-of-operation curves RCA-2N6249, 2N6250 and 2N6251 are multiple epitaxial TERMINAL DESIGNATIONS silicon n-p-n power transistors. Multiple-epitaxial construction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. EN These devices use the popular JEDEC TO-204AA package; they differ mainly in voltage ratings, leakage-current limits, and Vce(sat) ratings. The exceptional second-breakdown capabilities and high c (FLANGE) voltage-breakdown ratings make these transistors especially 9208-27516 sultable for offline inverters, switching regulators motor controls, and deflection circuit applications. JEDEC TO-213AA The
6 Pages, 446 KB, Scan-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/510 DEVICES LEVELS 2N6249 2N6249T1 2N6250 2N6250T1 2N6251 2N6251T1 JAN JANTX JANTXV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol 2N6249 2N6250 2N6251 Unit 2N6249T1 2N6250T1 2N6251T1 Collector-Emitter Voltage VCEO 200 275 350 Vdc Collector-Base Voltage VCBO 300 375 450 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current IC 10 Adc Base Current IB 5.0 Total Power Dissipation @ TA = +25C (1) @ TC = +25C (2) PT 6.0 175 W Top, Tstg -65 to +200 C RJC 1.0 C/W Operating & Storage Junction Temperature Thermal Resistance, Junction-to-Case TO-3 (TO-204AA) NOTES: (1) Derate linearly at 34.2 mW/C for TA > +25C (2) Derate linearly at 1.0 mW/C for TC > +25C ELECTRICAL CHARACTERISTICS (TA = +25C, un
6 Pages, 183 KB, Original2N6250) 300 V (2N6249) a High dissipation rating: P,=175 W = Low saturation voltages a Maximum safe-area-of-operation curves The 2N6249, 2N6250 and 2N6251 are multiple epitaxial silicon n-p-n power transistors. Multiple-epitaxial con- struction maximizes the volt-ampere characteristic of the device and provides fast switching speeds. These devices use the popular JEDEC TO-204AA package; they differ mainly in voltage ratings, leakage-current timits, and Vce(sat) ratings. The exceptional second-breakdown capabilities and high voltage-breakdown ratings make these transistors especially suitable for offline inverters, switching regulators motor controls, and deflection circuit applications. The high gain and high Es energy-handling capability of the 2N6249 make it an excellent choice for motor-control applications in which large winding inductances are encountered and high surge currents are required to start the motor. The high breakdown voltages, low saturation voltages, and fast-switc
6 Pages, 264 KB, Scan2N6250, 2N6251 Features * Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/371 * TO-3 (TO-204AA) Package Maximum Ratings Symbol 2N6249 2N6250 2N6251 Units Collector - Emitter Voltage Ratings VCEO 200 275 350 Vdc Collector - Base Voltage VCBO 300 375 450 Emitter - Base Voltage VEBO 6.0 Vdc IC 10 Adc IB 5.0 Adc PT 6.0 175 W W TOP, Tstg -65 to +200 C Collector Current Base Current Total Power Dissipation @ TA = +25 C (1) @ TA = +25 C (2) Operating & Storage Temperature Range Vdc Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Case Symbol Maximum Units RJC 1.25 C/W 1) Derate linearly @ 34.2 mW/C for TA > +25C 2) Derate linearly @ 1.0 mW/C for TC > +75C Electrical Characteristics OFF Characteristics Collector-Emitter Breakdown Voltage IC = 20 mAdc, L = 42 mH, f = 30-60 GHz (See Figure 10 of MIL-PRF-19500/510) Collector-Emitter Breakdown Voltage IC = 200 mAdc, L = 14 mH, f = 30-60 GHz (See Figure 10 of MIL-PRF-19500/510) Symbol Mimimum Maximum Units 2N6249
3 Pages, 169 KB, Original
3 Pages, 169 KB, Original2N6250 2N6251 Silicon NPN Power Transistors DESCRIPTION *With TO-3 package *High voltage,high speed *Low collector saturation voltage APPLICATIONS *High voltage inverters *Switching regulators *Line operated amplifier PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO PARAMETER CONDITIONS N O C I 2N6249 Collector-base voltage ANG INCH Collector-emitter voltage SEM Open emitter 2N6250 2N6251 2N6249 Emitter-base voltage UNIT 300 375 V 450 200 Open base 2N6250 2N6251 VEBO R O T DUC VALUE 275 V 350 Open collector 6 V IC Collector current 10 A ICM Collector current-peak 30 A IB Base current 10 A PT Total power dissipation 175 W Tj Junction temperature 200 Tstg Storage temperature -65~200 MAX UNIT 1.0 /W TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification 2N6249 2N
3 Pages, 116 KB, Original2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temp Range VCEO VCBO VEBO IC IB 200 300 PT Top, Tstg 275 375 6.0 10 5.0 5.5 175 -55 to +200 2N6251 350 450 Units Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C Max. 1.0 TO-3 (TO-204AA)* Unit C/W 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH
2 Pages, 47 KB, Original2N6250, 2N6251 . 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors For Switching Applications in Industrial and Commercial Equipment Features: 8 High voltage ratings: Veeo = 450 V (2N6251) 375 V (2N6250) | | 300 V (2N6249) 8 High dissipation rating: P,=175W = Low saturation voltages Maximum safe-area-of-operation curves RCA-2N6249, 2N6250 and 2N6251 are multiple epitaxial TERMINAL DESIGNATIONS silicon n-p-n power transistors. Multiple-epitaxial construction maximizes the volt-ampere characterlstic of the device and provides fast switching speeds. EN These devices use the popular JEDEC TO-204AA package; they differ mainly in voltage ratings, leakage-current limits, and Vce(sat) ratings. The exceptional second-breakdown capabilities and high c (FLANGE) voltage-breakdown ratings make these transistors especially 92CS-27516 suitable for offline inverters, switching regulators motor controls, and deflection circuit applications. JEDEC TO-213AA The high gain and high Es e
6 Pages, 288 KB, Scan2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ T A = +250C (1) @ T C = +250C (2) Operating & Storage Temp Range VCEO VCBO VEBO IC IB 2N6249 200 300 PT 2N6250 275 375 6.0 10 5.0 5.5 175 2N6251 350 450 Units Vdc Vdc Vdc Adc Adc W W T op, T stg -55 to +200 0 Symbol Max. Unit C THERMAL CHARACTERISTICS Characteristics TO-3 (TO-204AA)* Thermal Resistance, Junction-to-Case 1) 2) 0 1.0 RJC 0 Derate linearly at 34.2 mW/ C for T A > +250C Derate linearly at 1.0 W/0C for T C > +250C C/W *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L
2 Pages, 49 KB, Original2N6250 Qualified Level JAN JANTX JANTXV JANHC 2N6251 MAXIMUM RATINGS Ratings Symbol 2N6249 2N6250 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation @ TA = +250C (1) @ TC = +250C (2) Operating & Storage Temp Range VCEO VCBO VEBO IC IB 200 300 PT Top, Tstg 275 375 6.0 10 5.0 5.5 175 -55 to +200 2N6251 350 450 Units Vdc Vdc Vdc Adc Adc W W 0 C THERMAL CHARACTERISTICS Characteristics Symbol Thermal Resistance, Junction-to-Case RJC 1) Derate linearly at 34.2 mW/0C for TA > +250C 2) Derate linearly at 1.0 W/0C for TC > +250C Max. 1.0 TO-3 (TO-204AA)* Unit C/W 0 *See Appendix A for Package Outline ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 42 mH; F = 30-60 Hz (See Figure 3 of MIL-PRF-19500/510) 2N6249 2N6250 2N6251 Collector-Emitter Breakdown Voltage IC = 200 mAdc; L = 14 mH
2 Pages, 34 KB, Original
