C108B1 250 2N2327 CSH 300 C106C1 c108Ct 400 C10601 c10801 500 C1IO6Et C108E1 600 C106M1 c108M1 PACKAGE OUTLINE NO. 173 173 JAN & JANTX types available. t. 2N885-89 available 20 MA max. IGr. 2. 2N2322A-28A available 20 mA max. |g. 138[ -2N706 SEE GES706 | 2N877-81 2N880-89 FEATURES: * All-diffused for Proved Reliability Miniature Package TO-18 * Two Ranges of Gate Sensitivity: 2N877-881 200 va max. 2N885-889 20ua max. Low Holding Current: 2N877-881 5 ma. max. 2N885-889 3 ma. mas. * Voltage Ratings up to 200 volts * Designed for Military Applications MAXIMUM ALLOWABLE RATINGS 3) trep-to CASE) CONFORMS To JEDEC. TO-18 PACKAGE. Wn 198 gia 698 eikeueY PEAK FORWARD BlockiING | WORKING AND REPETITIVE NON-REPETITIVE PEAK Rox = 1000 OHMS MAXIMUM, = | Ty = = 65C 10. -+150C Ty. = ~65C to 4-128C. 2N877, 2N885 30 volts 30 volts 45 volts 2N878, 2N886 60 volts 60 volts 90 volts 2N879, 2N887 100 volts 100 volts 130 volts 2N880, 2N888 150 volts 150 volts 200 volts 2N881, 2N

2N877-81 2N880-89 FEATURES: * All-diffused for Proved Reliability Miniature Package TO-18 * Two Ranges of Gate Sensitivity: 2N877-881 200 va max. 2N885-889 20ua max. Low Holding Current: 2N877-881 5 ma. max. 2N885-889 3 ma. mas. * Voltage Ratings up to 200 volts * Designed for Military Applications MAXIMUM ALLOWABLE RATINGS 3) trep-to CASE) CONFORMS To JEDEC. TO-18 PACKAGE. Wn 198 gia 698 eikeueY PEAK FORWARD BlockiING | WORKING AND REPETITIVE NON-REPETITIVE PEAK Rox = 1000 OHMS MAXIMUM, = | Ty = = 65C 10. -+150C Ty. = ~65C to 4-128C. 2N877, 2N885 30 volts 30 volts 45 volts 2N878, 2N886 60 volts 60 volts 90 volts 2N879, 2N887 100 volts 100 volts 130 volts 2N880, 2N888 150 volts 150 volts 200 volts 2N881, 2N889 200 volts 200 volts 275 volts Peak Forward Voltage, PF V 300 Volts RMS Forward Current, On-state 0.5 Ampere Average Forward Current, On-state______._~~S Depends on conduction angle (see charts 2, 3, 11 & 12) Peak One Cycle Surge Forward Current (Non-re

mi TAG Semi Franel Corp NthAmerSemi TAG Semi Semitronics Transitron For specifications, consult manufacturer. Part Number Manufacturer Manufacturer 2N765 Synlar Ind 2N766 Synlar Ind 2N767 Synlar Ind 2N876 CSA Indus Franel Corp Motorola TAG Semi Transitron 2N877 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N878 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N879 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N880 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N881 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N882 FairchildSC Inti Device TAG Semi 2N883 FairchiidSC Inti Device TAG Semi 2N884 CSA Indus Inti Device Semitronics Texas Instr Transitron 2N884A Inti Device 2N885 CSA Indus GnrlElec/GE Molorola TAG Semi TexslnslLtd 2N885A Inll Device 2N886 CSR Indus GnrlElec/GE Motorola TAG Semi TexslnstLtd 2N886A Inti Device 2N887

1 | IN6096 | IN5834 | IN6098 45 ' SD41 SD51 \FSM (Amps) | - 500 800 400 800 800 1 VFM 5 48 .86 59 86 2 - A2 p04 DO5 DO4 D05 : Poe eo J Ft Ronn . SILICON CONTROLLED HEC TIFIERS ON-STATE (RMS) CURRENT AMPERES ~ VDRM VRRM 5 8 1.6 1.6 1.6 1.6 4 4 7.4 8 8 8 25 2N877 | 2N5060 CBU | 2N2322 | 2N2344 | 2N6236 | C106Y1 | 2N1770 C15U 50 2N878 | 2N5061 } 2N1595 C6F | 2N2323 | 2N2345 | 2N6237 | C106F1 | 2N1771 | 2N4441T | C122F Ci5F 100 2N897 | 2N5062 | 2N1596 C6A | 2N2324 | 2N2346 | 2N6238 | C106A1 | 2N1772 C122A C15A 200 2N881 | 2N5064 | 2N1597 C6B | 2N2326 | 2N2348 | 2N6239 | C106B1 | 2N1774 | 2N4442T | C122B C15B 300 2N1598 C6C | 2N2328 Ci06C1 | 2N1776 C1220 C15 400 2N1599 C6D | 2N2329 2N6240 | C106D1 | 2N1777 | 2N4448T | C1220 Ci5D 500 C106E1 | 2N1778 C0122E Ci5E 600 2N6241 |C106M1 | 2N2619 | 2N4444T | C122M C15M IGT (MA) 2 2 10 1 4 2 2 2 15 30 25 mf) VGT 8 8 3 B 8 8 1 8 2 1.5 1.5 2.5 CASE TYPE T018 T092 T039 7039 | ~=T039 T039 | T0126 T0202 T064 70220 | 10220 T064a2 Ey 0258354 oo000ab 1 Ly GENGRAL PURPO

2N877 2N885 2N3001 2N3005 2N5060 BRX44* 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45* 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46* 150 2N880 2N888 200 2N881 2N889 300 2N882 400 2N5063 2N5064 BRX47* 2N890 2N6564 BRX48* 2N883 2N891 2N6565 BRX49* IGT VGT 200A 20A 20A 200A 200A 200A 0.8V 0.7V 0.7V 0.8V 0.8V 0.8V IH 5.0mA 5.0mA 3.0mA 5.0mA 5.0mA 5.0mA * TO-92-18R lead forming available. Please consult factory. w w w. c e n t r a l s e m i . c o m 2N3004 2N3008 SCRs (Continued) IT (AMPS) 0.8 o @ TC ( C) 60 ITSM (AMPS) 10 TO-92 TO-92 CASE Pinout Pinout AGC CGA VRRM (VOLTS) 30 C103Y* 60 C103YY* 100 C103A* 200 C103B* CS55B* CS55BZ* CS92B CS92BZ CS55D* CS55DZ* CS92D CS92DZ 600 CS92M CS92MZ 800 CS92N CS92NZ 400 IGT VGT 200A 200A 20A 200A 20A 0.8V 0.8V 0.8V 0.8V 0.8V IH 5.0mA 5.0mA 5.0mA 5.0mA 5.0mA * TO-92-18R lead forming available. Please consult factory. w w w. c e n t r a l s e m i . c o m SCRs (Continued) IT (AMPS) 1.0 o 1.6 @ TC ( C) 90 90 70 70 70 ITSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS)

mi TAG Semi Franel Corp NthAmerSemi TAG Semi Semitronics Transitron For specifications, consult manufacturer. Part Number Manufacturer Manufacturer 2N765 Synlar Ind 2N766 Synlar Ind 2N767 Synlar Ind 2N876 CSA Indus Franel Corp Motorola TAG Semi Transitron 2N877 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N878 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N879 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N880 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N881 CSA Indus Franel Corp Inti Device Semitronics Texas Instr ThmsnCSFEFC Transitron 2N882 FairchildSC Inti Device TAG Semi 2N883 FairchiidSC Inti Device TAG Semi 2N884 CSA Indus Inti Device Semitronics Texas Instr Transitron 2N884A Inti Device 2N885 CSA Indus GnrlElec/GE Molorola TAG Semi TexslnslLtd 2N885A Inll Device 2N886 CSR Indus GnrlElec/GE Motorola TAG Semi TexslnstLtd 2N886A Inti Device 2N887

2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 | 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 | 300 2N882 2N890 2N6564 B&x48 400 2N883 2N891 | __ 2N6565 BRX49 IGT 200NA 20uA 20pA 200uA 200nA 200nA VeT 0.8V 0.7V 0.7V 0.8V 0.8V 0.8V | IM 5.0mA 5.0mA 3.0MA 5.0mA 5.0mA 5.0mA | central 186

2N877 2N885 2N3001 2N3005 2N5060 BRX44 60 2N878 2N886 2N3002 2N3006 2N5061 BRX45 100 2N879 2N887 2N3003 2N3007 2N5062 BRX46 150 2N880 2N888 2N5063 200 2N881 2N889 2N3004 2N3008 2N5064 BRX47 300 2N882 2N890 2N6564 BRX48 400 2N883 2N891 2N6565 BRX49 IGT 200LA 20uA 20HA 200HA 200HA 200A VGT 0.8V 0.7V 0.7V 0.8V 0.8V 0.8V IH 5.0mA 5.0mA 3.0mA 5.0mA 5.0mA 5.0mA Central Semiconductor Corp. 186(Continued) It (AMPS) 0.8 @ To (C) 60 60 60 60 60 Itsm (AMPS) 10 10 10 10 10 CASE TO-92-18R TO-92 VRRM (VOLTS) 30 C103Y 60 C103YY 100 C103A 200 C103B CS55B CS55BZ CS92B CS92BZ 400 CS55D CS55DZ cs92D CS92DZ 600 CS92M CS92MZ 800 CS92N CS92NZ IGT 200A 200nA 20uA 200NA 20uA VGT 0.8V 0.8V 0.8V 0.8V 0.8V IH 5.0mA 5.0mA 5.0mA 5.0mA 5.0mA Central 187 conductor Corp.(Continued) ty (AMPS) 1.0 1.6 @ Tc (C) 90 90 70 70 70 'TSM (AMPS) 10 10 15 15 15 CASE TO-18 TO-39 VRRM (VOLTS) 25 2N2322 50 2N1595 2N1595A 2N2323 100 2N1596 2N1596A 2N2324 150 2N2325 200 CS18B CS18BZ 2N1597 2N1597A 2N2326 250 2N2327 300 2N1598 2N1598A 2N2328 400

A 28 500 125 40 2.0 2N690 25 600 125 40 2.0 QN690A 25 600 125 4.0 2:0 2N691 25 700 125 40 2.0 2N692 25 800 125 40 2.0 2N764%* 0.39 30 125 1.0 110 2N765* 0.20 60 125 1.0 1.0 2N766%* 0.20 100 125 1.0 1.0 2N767* 0.20 200 125 1.0 1.0 2N876 0.35 15 150 0.2 0.8 2N877 0.35 30 150 0.2 0.8 2N878 0.35 60 150 0.2 0.8 2N879 0.35 100 150 0.2 0.8 2N880 0.35 150 150 0.2 0.8 2N881 0.35 200 150 0.2 0.8 2N882 0.35 300 150 0.2 0.8 2N8833 0.35 400 150 0.2 0.8 2N884 0.35 15 150 0.02 0.6 2N885 0.35 30 150 0.02 0.6 2N886 0.35 60 150 0.02 0.6 2N887 0.35 100 150 0.02 0.6 2N888 0.35 150 150 0.02 0.6 2N889 0.35 200 150 0.02 0.6 2N890 0.35 300 150 0.02 0.6 2N891 0.35 400 150 0.02 0.6 2N892% 0.250 15 125 0.05 0.70 2N893* 0.250 15 125 0.05 0.70 IN894%* 0.250 30/15 125 0.05 0.70 2N895%* 0.250 30/15 125 0.05 0.70 2N896* 0.250 60/15 125 0.05 0.70 2N897* 0.250 60/15 125 0.05 0:70 2N898* 0.250 100/15 125 0.05 0.70 2N899% 0.250 100/15 125 0.05 0.70 2N900* 0.250 200/15 125 0.05 0.70 2N9O1L* 0.250 200/15 125 0.05 0.70 2N948 6.26 30 1

41 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A 2N6345 2N6345A 2N6346A 2N6347A 2N6348A 2N6349 2N6349A 2N6394 2N6395 2N6396 2N6397 2N6398 2N6399 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 2N6504 2N6505 2N6506 2N6507 2N6508 2N6509 2N6564 2N6564 2N6565 2N6565 2N877 2N878 2N879 2N880 2N881 2N885 2N886 2N887 2N888 2N889 2P05M 2P1M 2P2M 2P4M 2P5M 2P6M 30TPS08 3P4J 40TPS08 5P05M 5P1M 5P2M 5P4M 5P5M 5P6M 8T04HA 8T04SH 8T14HA 8T14SH 8T24HA A-2 Teccor Device Direct or Suggested Replacement Teccor Package T106B1 T106B1 T106B1 T106D1 T106M1 Q2008R4 Q2012RH5 Q4008R4 Q4012RH5 Q6008R5 Q6012RH5 Q8008R5 Q8012RH5 Q2015R5 Q4015R5 Q6015R5 Q8010R5 Q8015R5 S2012R S2012R S2012R S4012R S6012R S8012R S2016R S2016R S2016R S4016R S6016R S8016R S2025R S2025R S2025R S4025R S6025R S8025R 2N6565 EC103D 2N6565 EC103D EC103B EC103B EC103B EC103B EC103B 2N5064 2N5064 2N5064 2N5064 2N5064 T106B1 T106B1 T106B1 T106D1 T106M1 T106M1 S8035K T106D2 S8035K S2008R S2008R S2008R S4008R S6008R S6008R Q2004F41 L2004F81 Q2004F41 L2004F81 Q200

2N877-81 2N1929-35 ~ 2N2344-48 2N2322-29* 2N1595-99 ELECTRICAL SPECIFICATIONS | VOLTAGE RANGE FORWARD CONDUCTION IryRms) Max. RMS on-state current (A) Irjay} Max. average on-state current @ 180 conduction (A) @ Tc Itsm Max. peak one cycle, non-repetitive surge current (A) Vt Max. Wt for fusing for <1.5 msec (A? sec) Max. peak on-state voltage @ 25C, 180 conduction, rated tray) (V) Max. internal thermal resistance, de, junction-to-case (C/W) Typical holding current @ 25C (mA) Typical turn-off time (usec) Typical turn-on time (sec) Max. rate-of-rise turned-on current (A/sec} Ty Junction operating temperature range (C) BLOCKING dv/dt Typical critical rate-of-rise of off-stage voltage, exponential to rated Vorm @ max. rated Ts (V/usec) FIRING 25-200 25-400 15-400 1.60 1.0 @ 85C 45 0.5 2.2 18 2.0 40 1.4 50 or Max. required gate current to trigger (uA) @ 65C @ 40c @ 25C @ 125C Vor Max. required gate voltage to trigger (V) @ 65C @ 40C @ 25C Ver Min. required gate voltage to trigger (V) @ 100C @ 125C VOL

Pps +155 2NB442 NPN fF 4604 140 | 10 [-a40% | -65... 20-70 | 4] 2 2 coe +155 2N4348 NPN [44D ] 120 | 10 -55... 1-60 | 8| 2 | 4 59 PT +155 2N3055 NPN F490 | 60 | 10 -55.., 20-70 | 4] 2 | 44 aor +155 .BDY56 NPN [150 .| 120 10 -55... 20-100 4] 10 | 25 : +155 2N8773 NPN [480,.] 140 | 10 -56... 15- 60 8 2 | 44 me +155 2N3772 NPN foo =! 60 10 f.-20 (} -460 2) -65.., 15-60 | 10 2 1,4 ae Sor gr Td 4185 Hitri silicijevi monostni transistorji Power silicon switching transistors Polariteta f-Ucso | Uceo | Usso f to --1 Prot Yop hee prifat Ig fr | Ucesat | Sb/ Tip/Type Polarity - 7 Te, Fig. av) | ) | M) baa | mM |] Co) (A) | (MHz) | (V) BU134 NPN - 600 | 350 10 4 fo 2887 | 65.4155 | 30-120 i 10 1 BDX18 PNP sf. 100 60 7 PMB | 447 | -55..4185 20-70 4 4 11 BDX20 PNP - 460 | 140 7 F904 717 | - 55.4185 20-70 4 4 11 BDY26 NPN f 300:/ 180 7B da -55..4155 15-120 2 | 10 0,6 BDY27 NPN [| 400 | 200 8 | 55.4155 15-120 2 | 10 0,6 BDY28 NPN f -500 | 250 3 BS - 55.4155 15-120 2 | 410 0,6 BUV20 NPN 2460 | 125 60 .| -55..+15

A 28 500 125 40 2.0 2N690 25 600 125 40 2.0 QN690A 25 600 125 4.0 2:0 2N691 25 700 125 40 2.0 2N692 25 800 125 40 2.0 2N764%* 0.39 30 125 1.0 110 2N765* 0.20 60 125 1.0 1.0 2N766%* 0.20 100 125 1.0 1.0 2N767* 0.20 200 125 1.0 1.0 2N876 0.35 15 150 0.2 0.8 2N877 0.35 30 150 0.2 0.8 2N878 0.35 60 150 0.2 0.8 2N879 0.35 100 150 0.2 0.8 2N880 0.35 150 150 0.2 0.8 2N881 0.35 200 150 0.2 0.8 2N882 0.35 300 150 0.2 0.8 2N8833 0.35 400 150 0.2 0.8 2N884 0.35 15 150 0.02 0.6 2N885 0.35 30 150 0.02 0.6 2N886 0.35 60 150 0.02 0.6 2N887 0.35 100 150 0.02 0.6 2N888 0.35 150 150 0.02 0.6 2N889 0.35 200 150 0.02 0.6 2N890 0.35 300 150 0.02 0.6 2N891 0.35 400 150 0.02 0.6 2N892% 0.250 15 125 0.05 0.70 2N893* 0.250 15 125 0.05 0.70 IN894%* 0.250 30/15 125 0.05 0.70 2N895%* 0.250 30/15 125 0.05 0.70 2N896* 0.250 60/15 125 0.05 0.70 2N897* 0.250 60/15 125 0.05 0:70 2N898* 0.250 100/15 125 0.05 0.70 2N899% 0.250 100/15 125 0.05 0.70 2N900* 0.250 200/15 125 0.05 0.70 2N9O1L* 0.250 200/15 125 0.05 0.70 2N948 6.26 30 1

40 2N6241 2N6342 2N6342A 2N6343 2N6343A 2N6344 2N6344A 2N6345 2N6345A 2N6346 2N6346A 2N6347 2N6347A 2N6348 2N6348A 2N6349 2N6349A 2N6394 2N6395 2N6396 2N6397 2N6398 2N6399 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 2N6504 2N6505 2N6506 2N6507 2N6508 2N6509 2N877 2N878 2N879 2N880 2N881 2N884 2N885 2N886 2N887 2N888 2N889 2N948 2N949 2N950 B136-500F B136-600F B136-800F B149B ON Semiconductor Nearest Replacement MCR106-6 MCR106-8 2N6344 2N6344 2N6344 2N6344A 2N6344 2N6344A 2N6349 2N6349A 2N6348A 2N6348A 2N6348A 2N6348A 2N6348A 2N6348A 2N6349 2N6349A 2N6394 2N6395 2N6397 2N6397 2N6399 2N6399 2N6400 2N6401 2N6402 2N6403 2N6404 2N6405 2N6504 2N6505 2N6507 2N6507 2N6508 2N6509 MCR100-3 MCR100-3 MCR100-3 MCR100-4 MCR100-4 MCR100-3 MCR100-3 MCR100-3 MCR100-3 MCR100-4 MCR100-4 MCR100-3 MCR100-3 MCR100-3 MAC4M MAC4M MAC4N MCR100-4 Page Number 249, 572 249, 572 253, 278 253, 278 253, 278 254, 283 253, 278 254, 283 253, 278 254, 283 254, 283 254, 283 254, 283 254, 283 254, 283 254, 283 253, 278 254, 283 251,

2N877.... Igy = 0,.2mA_ ; | | | t ' ! | rt | ] 06 roto | toto I \ 1,6 | 2N 2322 a T 1 { i ! plastic packages boitiers plastiques am t T 08 | BRYSS.... igt = 0.2mA , va | LP 1398 0,8 } { | \ ' ? 18 PTL AO7. a . | 4 TLS106.. 0 ! ( 4 TLS 107.00 | t 4 TYS 406... | ! ! 4 TYS 407... [ 6 TYS 606... 2 mA I I 6 : TYS607 ... 5 nf : | { | 8 [tyse06.. igt = 0.2mA | ' ! 8 TYS 807...) a : IGT =0,5mA I 1 10 | TYS 1006... gt = 0.2 ma | t ' 10 TYS 1007... iet = oma |