2SB1401 Silicon PNP Triple Diffused ADE-208-875 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter 55 k (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -300 V Collector to emitter voltage VCEO -300 V Emitter to base voltage VEBO -7 V Collector current IC -0.3 A Collector peak current I C(peak) -0.6 A Collector power dissipation PC 2 W PC * 1 15 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -300 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -300 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -7 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -10 A VCB = -300 V, IE = 0 I CEO -- -- -10 VCE = -60 V, RBE = I E

2SB1401 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 55 k (Typ) 3 2SB1401 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -300 V Collector to emitter voltage VCEO -300 V Emitter to base voltage VEBO -7 V Collector current IC -0.3 A Collector peak current IC(peak) -0.6 A Collector power dissipation PC 2 W PC* 1 15 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -300 -- -- V IC = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -300 -- -- V IC = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -7 -- -- V IE = -1 mA, IC = 0 Collector cutoff current ICBO -- -- -10 A VCB = -300 V, IE = 0 ICEO -- -- -10 VCE = -60 V, RBE = IEBO -- -- -10 VEB = -5 V, IC = 0 hFE1 1000 -- --

2SB1401 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base 2. Collector 3. Emitter 55 kQ (Typ) 2SB1401 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Voge 300 Vv Collector to emitter voltage Voeo 300 Vv Emitter to base voltage Viso 7 Vv Collector current lo 0.3 A Collector peak current | opeat 0.6 A Collector power dissipation P. 2 W Po 15 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at T, = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V,..,, 300 _ Vv |, =1 mA, |, =0 voltage Collector to emitter breakdown V,..-. 300 _ Vv |, =-10 mA, R,, = voltage Emitter to base breakdown Veneao ! _ _ Vv |. =1 mA, |, =0 voltage Collector cutoff current lopo _ _ 10 pA Vig = -300 V, I. = 0 loeo 10 Voe = 60 V, R,, =o lego 10 Vig =O V,1,=0 DC current transfer ratio Nees 1000. _ Voge = 1.5 V, |, =-20 mA" eee

2SB1401 - Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25C) 10-220 EM | item Symbol Rating Unit Collector to base voltage Veep 300 OV Collector to emitter vollage Veeg ~300 V Emitter to base voltage Vegan o-? OV 5 Conector Collector current le ~0.3 =A 3. Emitter Collector peak current icipeaky 78.6 A Collector power dissipation Pc 2 Ww 2 Pot 15 Junction temperature T} 1 50 C | ' Storage temperature Tstg ~55 to C +150 i Note: 1. Value at Te = 256C. 55k 2 (typ) 3 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition Collector to base breakdown voltage Viamceo ~300 Vv lo = -1t mA, Ip = 0 Collector to emitter breakdown voltage = Vignyceg ~300 _ Vv Ig = -10 MA, Rog = Emitter to base breakdown vollage Viamceo 7 ~~ Vv lp =-1 mA, Ie = 0 Collector cutoff current leBo _ ~10 pA Veg = 300 V, Ip = 0 Ico OCHO = BO V, Rag = ko OCHO Veg=-SVilg=0 DC current transfer ratio Keey 1000 ~ _ Vee e - 1.5 V, Ie 20 ma! Hee 1500 ~_ Veg = -1.5V, Ie = -1

2SB1401 Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25C) TO-220 FM Item Symbol Rating Unit Collector to base voltage Vceo 300 V Collector to emitter volage Vegq -300 V Emitter to base voltage Vepo -?7 V y Bae or Collector current Ic -0.3 A 3. Emitter Collector peak current icipeak) ~0.6 A Collector power dissipation Pe 2 Ww 2 Pot 15 Junction temperature Tj 150 C 1 Storage temperature Tstg -55 to C +150 Note: 1. Value at Te = 25C. 55k2 (typ.) 3 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition Collector to base breakdown voltage Viaryceso ~300 V lc =-1 MA, Ie = 0 Collector to emitter breakdown voltage Vigayceo -300 V Io =-10 mA, Reg = @ Emitter to base breakdown voltage Vigryepo ~7 0 _ V le =-1 mA, I, =0 Collector cutoff current logo -10 pA Vog=-300V, Ie = 0 Iceo - -10 Vog = -60 V, Reg = 22 leso ~ -10 Veg =5V,Io=0 7 DC current transfer ratio heey 1000 Veg =-1.5 V, Io =-20 mA" heee 1500 _ Vee =-15V, lo =-100 mAt HITACHI El

20 70 -2 0.5 -0.5 -1 70.05 2SB1398 RE LF PA =30 ~25 -5 i -0.1] -10 90 205 72 -2 v1 -3 0.1 28B1399 AW. LF PA ~120 -120 -10 2 30 -10 | -100 1000} 20000; -3 = -1.5 -2 - -0. 01 2SB1400 Biz LF PA 7120 -120 6 2 25 -10 | -100 1000 | 20000 -3 -3 1.5 -2 -3 -0. 006 2SB1401 EZ LF PA -300 -300 -0. 3 2 25 -10 | -300 1000 ~1.5 | -0.02 1.5 2 ~0.1 | 0.0002 25B1402 Ar LF PA -120 -120 =3 2 25 -10 | -100 1000 | 20000 -3 v1.5 1.5 2 1.5 -0. 003 2SB1403 A LF PA -120 -120 -6 2 25 -10 | -100 1000 | 20000 -3 73 -1.5 -2 -3 -0. 006 2SBi404 Ayr LF PA -120 -120 -3 2 29 -10 | -100 1000 | 20000 -3 71.5 1.5 2 -1.5 ~0. 003 2SB1405 = GD -80 -50 -0.7 1 -0.1 | -40 $000 -2 4 -0.05 1.2 2 -0.1} -0.0001 2881406 = GD -sof-so! 1 1 -0.11 -40! 4000 2} -0.5/ -15/ 2] -0.5| -0.0005 2SB1407L/S FZ LF PA -35{ 35] -2.5 18{ 20 [ -35 60; 320; -2{ -0.5{ -1 =2 0.2 2SB1409L/S Ea LF PA -180 | -160 | -1.5 18 [__10 [-160 so{ 200, -5[ 015) -1 =0.5{ _-0.05 - 89 - a Ri ) LS He (Ta=25C) [#E [Md ttyp il] ayTy BER fr SW Time Cob Cre Oth OF BRA na OG BS Vee | I

50/150V, 50/100mA, 200MH (2802240 35a(1,6mm) SSMini - 2 SB 1464 Si-P-Darl+Di__$ P, 60/60V, 8/12A, 25W, 20MHz, hFE 0 17c T0-2201so _ 2SB1020 176 28B1021...22, 2581224...25 2SB 1465 _ Si-P-Darl 300/300V, 0,3A, 25W, 25MHz, hFE=1,5k...30k {2SD2217 17c SOT-186 2SB1401 : 2 SB 1466 Si-P-Darl+Di__$ P, 100/100V, 15/20A, 100W, hFE=1k...20k _ {2SD2149. 18) TO-3Po BDV 66A...D, BDW84C...D,25B969 2 SB 1467 Si-P P, 60/30V, 8A, 20W, 120MHz, 100/230ns (28D2218 17c TO-220 Iso 2SB1018 17c BD 202F, BD 204F 2SB1018...19, 2SB1135++ 288 1468 Si-P _P, 60/30V, 12A, 25W, 120MHz, 100/330ns (2802219 17c TO-220 {so 2SA1451, 251568, 2541600 2 SB 1469 Si-P-Dart 160/140V, 7/12A, 100W, 20MHz, hFE=5k...30k (2SD2221 18} TO-3P 2$B1493 2 SB 1470 _Si-P-Darl 160/160V, 8/15A, 150W, 20MHz, hFE=3k...30k {2D2222 77) TOP-3L . 2$B1490, 2501503 2 SB 1471 Si-P-Dart 7O/6OV, 4A, 30W, 20MH7, 0,5/2,6us, hFE>2k {2SD2223 30c . (TO-220MF) (BD 902)6 17j (BDW 24B...C, BDW 64B...D, 29B1342,++)6 2 SB 1472 Si-P-Dart 7O/6OV, 7A, 35W, 0,5/2,9y1s, 20MHz, hF

2sc4913 2sc5022 2sc5273 2sd1137 2sd1138 2sd1163a 2sd1527 2sd2107 2sd2115ls 2sd2337 2sd476ak 2sd975 Transistors Bipolar Power Transistors Switching (Darlington Type) 2sa1194k 2sb1012k 2sb1032k 2sb1079 2sb1091 2sb1103 2sb1389 2sb1390 2sb1391 2sb1399 2sb1400 2SB1401 2sb1494 2sb727k 2sb791k 2sb955k 2sc1881k 2sc2324k 2sc4500ls 2sd1113k 2sd1126k 2sd1376k 2sd1436k 2sd1521 2sd1559 2sd1606 2sd1970 2sd1976 2sd2019 2sd2101 2sd2104 2sd2106 2sd2124ls 2sd2256 2sd768k 2sd970k Transistors Power MOS FET Modules High Frequency Amplifiers pf01410a pf01411a pf01411b pf01412a pf04115b pf0414a pf0414b pf0415a pf08103a pf08103b pf08107b pf08107bp pf08109b pf08114b Transistors Power MOS FET Modules IGBTs 2sh11 2sh12 2sh13 2sh14 2sh15 2sh16 2sh17 2sh18 2sh19 2sh20 2sh21 2sh22 2sh26 2sh27 2sh28 2sh29 2sh30 2sh31 Transistors Power MOS FETs - FET 2sj574 2sj575 2sj576 2sj586 2sj587 2sj588 2sk3287 2sk3288 2sk3289 2sk3290 2sk3348 2sk3349 2sk3378 2sk3380 h5n0301sm Transistors Power MOS FETs Amplifier 2sj160 2sj351 2sj76 2sk1056