2SB1403 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 1. Base | 2. Collector C Dp 3. Emitter AWW 3.0kQ 1800 (Typ) (Typ) woo2SB1403 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Voge 120 Vv Collector to emitter voltage Voeo 120 Vv Emitter to base voltage Viso 7 Vv Collector current lo on) A Collector peak current | opeat 12 A Collector power dissipation P. 2 W Po 25 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C C to E diode forward current LL 6 A Note: 1. Value at T, = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown V3, 120 _ Vv |, =0.1 mA, |, =0 voltage Collector to emitter breakdown V2. 120 _ Vv |, =-25 mA, R,, = voltage Emitter to base breakdown Veneao ! _ _ Vv |. =50 mA, |, = 0 voltage Collector cutoff current lopo _ _ 10 pA Vig = 100 V, 1. = 0 loeo 10 Voge = 100 V, Ry, = DC current transfer ratio hee 10

2SB1403 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 12 3 1. Base 2. Collector 3. Emitter ID 3.0 k (Typ) 180 (Typ) 3 2SB1403 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -120 V Emitter to base voltage VEBO -7 V Collector current IC -6 A Collector peak current IC(peak) -12 A Collector power dissipation PC 2 W PC* 1 Junction temperature Tj Storage temperature Tstg C to E diode forward current Note: ID * 25 1 150 C -55 to +150 C 6 A 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -120 -- -- V IC = -0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -120 -- -- V IC = -25 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -7 -- -- V IE = -50 mA, IC = 0 Collector cutoff current ICBO -- -- -10 A VCB = -100 V, IE = 0 ICEO -- -- -10 VCE = -100 V,

2SB1403 Silicon PNP Triple Diffused Low Frequency Power Amplifier Absolute Maximum Ratings (Ta = 25C) 10-220 FM Item Symbol Rating Unit Collector to base voltage Vepo -120 V Collector to emitter volage Vegqg -120 V Emitter to base voltage Veso -% V 5 nee or Collector current Ic -6 A 3. Emitter Collector peak current icipeaky) 12 A Collector power dissipation Po 2 Ww 5 Pol 25 Junction temperature Tj 150 C ' Storage temperature Tstg -55 to C ae | lo +150 C to E diode forward current Ip"! 6 A WN 3.0k2 1802 Note: 1. Value at Te = 25C. (typ.) (typ) & 3 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test condition Collector to base breakdown voltage Vipricpo ~120 - _ V Io =-0.1 MA, Ie = 0 Collector to emitter breakdown voltage = Vignyceo -120 V Io = -25 mA, Rae = Emitter to base breakdown voltage VieR)e80 Fo V Iz = -50 mA, Ic = 0 Collector cutoff current lcBo -10 pA Veg =-100V, I; =0 leo -10 Vog = -100 V, Rag = DC current transfer ratio hee 1000 20000 i Vee =-3V, Io =-3 A"! Collecto

2SB1403 Silicon PNP Power Transistors DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1403 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE== -120 V V(BR)CBO Collector-base breakdown voltage IC=-100A; IE=0 -120 V V(BR)EBO

2SB1403 Silicon PNP Power Transistors DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -6 A ICM Collector current-peak -12 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 Inchange Semiconductor Product Specification 2SB1403 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE= -120 V V(BR)CBO Collector-base breakdown voltage IC=-100A; IE=0 -120 V V(BR)EBO E

2SB1400 Biz LF PA 7120 -120 6 2 25 -10 | -100 1000 | 20000 -3 -3 1.5 -2 -3 -0. 006 2SB1401 EZ LF PA -300 -300 -0. 3 2 25 -10 | -300 1000 ~1.5 | -0.02 1.5 2 ~0.1 | 0.0002 25B1402 Ar LF PA -120 -120 =3 2 25 -10 | -100 1000 | 20000 -3 v1.5 1.5 2 1.5 -0. 003 2SB1403 A LF PA -120 -120 -6 2 25 -10 | -100 1000 | 20000 -3 73 -1.5 -2 -3 -0. 006 2SBi404 Ayr LF PA -120 -120 -3 2 29 -10 | -100 1000 | 20000 -3 71.5 1.5 2 -1.5 ~0. 003 2SB1405 = GD -80 -50 -0.7 1 -0.1 | -40 $000 -2 4 -0.05 1.2 2 -0.1} -0.0001 2881406 = GD -sof-so! 1 1 -0.11 -40! 4000 2} -0.5/ -15/ 2] -0.5| -0.0005 2SB1407L/S FZ LF PA -35{ 35] -2.5 18{ 20 [ -35 60; 320; -2{ -0.5{ -1 =2 0.2 2SB1409L/S Ea LF PA -180 | -160 | -1.5 18 [__10 [-160 so{ 200, -5[ 015) -1 =0.5{ _-0.05 - 89 - a Ri ) LS He (Ta=25C) [#E [Md ttyp il] ayTy BER fr SW Time Cob Cre Oth OF BRA na OG BS Vee | Ic/lz } ton tf tstg | (max) | (max) AUBY {i & (MHz) | (VW) | (A) | Cus) | Cus) | (us) | GF) | (pF) ig 8 mt a tbe} -5 0.5 TO-220 BCE 2SB1369 ibe] -5 0.5 TO-220FP BCE 28B1370

= # 28B1015 2SB1304 2SB941 28B1370 288 Od 2SA1552 2SA1006 2SB1409 2SB1199 288 os 2SA984 2SA1015(L) 254953 2SB1321A 2SA1115 2B Od 28B1229 ISA1427 2SB1434 288 oA 2SA1708 2SA1425 2SA1674 28B ods 28A1782 28A1015 2SB790 2SA1115 28B AO 2SB1402 2SB950A 238 A OW 2SB1403 2SB1194 2SB1340 288 ie 2SB1024 2SB974 2SB950A 288 ST 2SB886 2881020 2SB975 2SB1195 2SB1344

0-4 Type No. Manuf. SANYO TOSHIBA NEC HITACHI FUJITSU MATSUSHITA | MITSUBISHI ROEM 288 1426 | OA 2881395 281266 2SB1117 2sB1446 288 1427 | OA asBL114 2SBi434 2841363 288 1428 = [Oz 258892 | _2sBiii7 2SB1446 238 1429 | RS 28B1317 28 140 =| A 288913 2$B1021 2SB1403 2SB1264 2981340 238 1431 [BO 288919 2$B1020 28B1391 2$B1255 288 1492 |B @ 258887 2881020 2581399 2581432 2sB 1433 [BO 288892 2841020 2SB1434 281374 288 1434 | OF 2SA1708 238 1435 [# OF asBil42 288 1436 | OA 2SB1140 2SA1387 28B1447 2b 147 | AF 2841708 288 1438 | AF 2841709 asp 1439 [OF 2SB1144 288 1460 | AOE 2SA1708 251213 2SA1797 288 144) | OA 2SAl417 28B1520 2SB1440 288 1442 | BO 2881229 2$A1020 288 1443 | OA 2SA1706 2SA1428 2SB1434 288 144g | OA 2541709 2SB1434 28B 1445 | OA 2$B1295 2841298 288970 2sB 1446 OF 2841702 2SA1428 2SA1985 238 1447 [AF 2$B1165 2SA1385 2881358 288 1448 | RET 258883 288 1449 =O 2SB553 2SA1385 2SB1447 288 1450 =O 2SB553 2sB1177 2B 14st [= asBli76 288 165 | =O 2SB1177 2B 14a |B OB 2SB1274 28B1015 2SB941 28B1370 2

2SA1012 2SA1069 2SB942 28B 1335 w | OA 2SA1469 28A1307 2SB1096 2SB942 28B 1336 Aa 2SB8 16 28A1264 2SBI177A 28B 1337 o- 2SA1011 2SA940 2SB536A 2SA1133 25B 1338 o-L 2SA1606 2SA1304 28B1096 2SB940 288 1339 o-L 2SB886 2SB1106 2SB1194 28B 1340 ~ | O-4 2SB1228 2SB1403 2SBi194 28B 1341 o-L 2SB885 2SB676 2S3B1087 2SB1102 2SB950 28B 1342 ~ |O-L 28B1227 2SB1024 28B1430 2SB1389 2SB950 2SB 1343 o-L 2SB886 2SB791 (Kk) 2SB1195 2SB 1344 o-L 28B1228 28B1431 2SB1391 28B1195 28B 1345 o-L 2SB849 2SB1056 288 1346 = # 2SB834 2SB1089 2SB941 2SB1369 28B 1347 "| eA OF 2SB817 2SA1301 2SB941 2SB 1348 AoW 28A1207 2SA1320 2SA1123 28B 1349 AoW aSA1624 28A1320 aSA1123A 23B 4360 ae aSA1172 25B 1351 GUTyY 2SB1432 2SB 1352 GUTY 2SB1137

Collector Dissipation Curve 30 20 s ' oO ~ a x > c wn & 20 2 S e 4 a & a 2 5-05 3 1) D 8S +02 = 10 o 2 2 Qt Qa 3 a. 5 Os 3 = 4.02 3 ~ 3 30 0 50 +50 Case temperature Te (C) Area of Safe Operation Collector to emitter voltage Vee (V} a Ce =30 199 a0HITACHI 2SB1403 DC Current Transfer Ratio vs. Typical Output Characteristics Collector Current | | an, a i < 2 2 | a | & - a ay Ww 3 6 S = 3 e 2 2 8 5 oO o OQ a , -O1 63 18 3 =a Collector to emitter voltage Veg (V) Collector current Io (A) : Saturation Voltage vs. Sage Collector Current = CS 16 on oy + 4 + ollecior to emitter saturation vol Base to emitier saturation vollace V. im wi Collector current Ic (A}HITACHI 28B 1403 Thermal resistance 6, (C/W) 10m Transient Thermal Flesistance