2SB1404 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1. Base 2. Collector 3. Emitter 12 3 1 ID 4 k (Typ) 300 (Typ) 3 2SB1404 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -120 V Collector to emitter voltage VCEO -120 V Emitter to base voltage VEBO -7 V Collector current IC -3 A Collector peak current IC(peak) -6 A Collector power dissipation PC 2 W PC* 1 25 Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -120 -- -- V IC = -0.1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -120 -- -- V IC = -25 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -7 -- -- V IE = -50 mA, IC = 0 Collector cutoff current ICBO -- -- -10 A VCB = -100 V, IE = 0 ICEO -- -- -10 VCE = -100 V, RBE = DC current transfer ratio hFE 1000 --
2SB1404 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier Outline TO-220FM 2 0 { 1. Base 2. Collector | Ip 3. Emitter 4kQ 300 Q (Typ) (Typ) wd2SB1404 Absolute Maximum Ratings (Ta = 25C) Item Ratings Unit Collector to base voltage -120 Collector to emitter voltage -120 Emitter to base voltage Collector current Collector peak current C(peak) Collector power dissipation P, ds S| >| >| <| <| < *1 P. 25 Junction temperature qj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at T, = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Max Unit Test conditions Collector to base breakdown voltage Vv -120 (BR)CBO =-0.1 mA, |, =0 I Collector to emitter breakdown voltage Vv -120 (BR)CEO =25 mA, R,, = I Emitter to base breakdown voltage Vv 7 (BR)EBO =-50 mA, |, =0 I. Collector cutoff current CBO -10 CEO -10 vA s-V,, = -100 V, |, = 0 Voz =-100 V, Rye = DC current transfer ratio hee 1000 _ 20000 Veg =-3 V, |p =-1.5 A" Collector to emitter saturation vol
2SB1404 Silicon PNP Power Transistors DESCRIPTION *With TO-220Fa package *High DC current gain *Low collector saturation voltage *DARLINGTON APPLICATIONS *For use in low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector -emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -6 A PC Collector power dissipation Ta=25 2 TC=25 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB1404 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=-25mA; RBE== -120 V V(BR)CBO Collector-base breakdown voltage IC=-100A; IE=0 -120 V V(BR)EBO Emit
r-Base Voltage -7 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak -6 A Collector Power Dissipation @Ta=25 2 PC W Collector Power Dissipation @TC=25 25 TJ Junction Temperature 150 Tstg Storage Temperature -55~150 isc Websitewww.iscsemi.cn 2SB1404 isc Product Specification INCHANGE Semiconductor isc Silicon PNP Darlington Power Transistor 2SB1404 ELECTRICAL CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -25mA; RBE= -120 V V(BR)CBO Collector-Base Breakdown Voltage IC= -0.1mA; IE= 0 -120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50mA; IC= 0 -7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -3mA -1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -3A; IB= -30mA -3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= -1.5A; IB= -3mA -2.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= -3A; IB= -30mA -3.5 V ICBO Collector Cutoff Current VCB= -100V; IE= 0 -10 A ICEO C
on Voces: _ _ 1.5 |, =-1.5A, |, =-3 mA* voltage cea? -3.0 |, =-3 A, |, =-30 mA* Base to emitter saturation peta) 2.0 |, =1.5 A, |, =-3 mA voltage Vecran2 9 3.5 |, =A, |, =-30 mA* Note: 1. Pulse test. See switching characteristic curve of 25B765(K). HITACHI2SB1404 Collector power dissipation Pe (W) Collector current I_ (A) Maximum Collector Dissipation Curve 50 100 150 Case temperature Te (C) Typical Output Characteristics a) a 3 Te = 25C | VS -O2mA =0 -1 -2 -3 4 5 Collector to ernitter voltage Voe (Vv) Gollecter current Ip (A) DG current transfer ratio Hee Area of Sate Operation 20 10 aa] -2 d A 10 C2. O5 Kan oa bTa=25C * 1 Shot Pulse -O1 0 05 0 02 -3 -16 -30 106 -300 Collector to emitter voliage Voe (V) DC Current Transter Ratio vs Collector Current 30000 Voge =-3 10000 aA ay 3000 1600 300 01 03 -10 -8 -10 Collector current Ie (A) HITACHI25B1404 Saturation Voltage vs Gollector Gurrent A a Te = 25 de _ VBE (eat) Vee teat) 1 a oo Collector to emitter saturation voltage Vegjeq) () Base to emitter s
1136 = # 2SA1444 2SB1604 28B 1137. A 2SB1362 288 1140 ~ (= 2SA1357 2SB1151 2SB945 28B1436 2B 41 |= = 2SA1359 2SB1052 2SB891 288 1142 |= # 2SBI12 2SB943 2SB1065 2B 143- |S 2SB1151 2SB944 2B 4d |S 2841408 28A1220 2SB1192 2SB1086 ES 114 AY 2SB1226 | 2SBi098 2SB1404 2SB1340 288 1146 S |} A 28B1228 | 2SB1098 2SB1400 2SB1108 2SB1340 288 1147 | A OW 2SB1228 28B1099 2SB1391 2SB1108 2SB1344 288 1148 BOF 2SB1267
' j 4 ao ~o) ~9. Collector to emitter voltage Vcg (V} Saturation Voitage vs. Collector Current Ak J Collector current Ip (A) DC current transter ratio hes DC Current Transfer Ratio vs. Collector Current 300 ~oi O ~ 4 -3 16 Collector current Ic (A)HITACHI 2SB1404 Thermal resistance 6;., (C/W) im 10m Transient Thermal Resistance 100m 1.0 Time t(s) 10 100
O-220F 2SB1389 TO-220Fa 2SB980 TO-3PN 2SB1063 TOP-220Fa 2SB1226 TO-220F 2SB1392 TO-220Fa 2SB981 TO-3PN 2SB1064 TO-220 2SB1227 TO-220F 2SB1393 TO-220Fa 2SB982 TO-3PN 2SB1065 TO-126 2SB1230 TO-3PN 2SB1402 TO-220Fa 2SB983 TO-220 2SB1069 TO-220 2SB1231 TO-3PN 2SB1404 TO-220Fa 2SB988 TO-220 2SB1071 TO-220Fa 2SB1250 TO-220Fa 2SB1411 TO-220F 2SB989 TO-220 2SB1075 TO-126 2SB1251 TO-220Fa 2SB1419 TO-3PL 2SB991 TO-220 2SB1077 TO-220 2SB1252 TO-220Fa 2SB1421 TO-3PN 2SB992 TO-220F 2SB1078 TO-220 2SB1257 TO-220F 2SB1429 TO-3PL 2SB993 TO-220F 2SB1085 TO-220 2SB1273 TO-220 2SB1430 TO-220F 2SB994 TO-220F 2SB1087 TO-220F 2SB1274 TO-220Fa 2SB1454 TO-220F 2SB995 TO-220F 2SB1089 TO-220 2SB1286 TO-220 2SB1455 TO-220F 2SB996 TO-220F 2SB1090 TO-220 2SB1287 TO-220F 2SB1477 TO-247 2SB1372 TOP-3Fa 2SB1003 TO-220F 2SB1094 TO-220Fa 2SB1289 TO-220 2SB1478 TO-247 2SB1004 TO-220F 2SB1095 TO-220Fa 2SB1290 TO-220Fa 2SB1495 TO-220F 2SB1134 TO-220F 2SB1096 TO-220Fa 2SB1291 TO-220 2SB1135 TO-220F 2SB1097 TO-220F 2SB1292 TO-220Fa 2S
28B 1562 R= 2SB1124 2SB1094 2SBi299 28B 1563 o-A 2SA1507 2SA1408 2SA1220 2SB1414 28B 1564 ods 2SB1142 2SA1359 2SBT44A 2SB1416 288 1965 ~ | Od 28B1133 28B1015 2SB1094 2SB941 28B 1566 - |OA 2SB1133 2SB1375 2SB1094 2SB943 28B 1567 o-A 28B1226 2SB1411 28A1395 2SB1404 2SB949 288 1668 ~ |OA 28B1227 2SB1024 2SB1095 2SB1389 2SB950 28B 1569 o-s 2SB1037 2SA1304 2SB1192 28B 1571 Az 28B1302 28B1073 28B 1572 A Be 28B1124 2SA1736 2SB1573 28B 1573 moOF 2881202 2SB906 2SB1261 2SB1314 2SB1516 28B 1574 BOF 28Bi 201 2SB906 2SB1261 2SB1314 2SB1184 28B 1875 OF 2SB1203 2SAL244 2SA1385 28B 1576 wm OF 2SB1316
2SA2005 2881137 BS 2SB1587 2SB1362 2581140 = # 2SA1357 28B1 151 2SB1446 2$B1326 28B1141 = # 2SA1359 2SA900 2SB1243 2381142 = 3 2SB772 2541096 2SB1243 2581143 = 2SA1488 2SB1151 2SB944 2SB1243 7881144 = 2SA1408 2841220 2SB1192 2SB1236A 2381145 BOW 28B1098 + 2SB1404 28B1940 2881146 AY 2SB1098 2SB1400 2SB1108 2SB1340 7881147 a oY 2$B1099 2SB1391 2SB1108 25B1340 781143 F 2B) 267 25811484 wm OF 2SB1267 2381149 Ae 2SB93TA 2SB1316 2581190 ae 2SB1257 2SB1526 2SB1316 2881151 A Ss 2SA1488 2SB1165 2SB933 2SA1952 28B1152 HOF 2SB817 % 2SB863 2SA1227A 28B1153 HOF 9841302 2SB1154 wOF 2SA1746 2SB1155 OF 2SA1746 ISB1371 2581136 wm OF 2SB1372 seis? | 2SA1907 2SB1361 | 7381158 OF 2SA1907 2SB13T1 2SB1159 MOF 2SA1908 2981160 HOF 2SB1361 | 2581161 OF 2SA1860 2SB1373