diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1407(L)/(S) Silicon PNP Epitaxial ADE-208-876 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base br

2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -35 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -35 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -20 A VCB = -35 V, IE = 0 60 -- 320 VCE = -2 V, IC =

diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1407(L)/(S) Silicon PNP Epitaxial ADE-208-876 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base br

2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -35 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -35 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -20 A VCB = -35 V, IE = 0 60 -- 320 VCE = -2 V, IC =

2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current IC(peak) -3 A 18 W 1 Collector power dissipation PC* Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -35 -- -- V IC = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -35 -- -- V IC = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V IE = -1 mA, IC = 0 Collector cutoff current ICBO -- -- -20 A VCB = -35 V, IE = 0 60 -- 320 VCE = -2 V, IC = -0.5

2SB1407(L)/(S) Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 ' 2 | 3 1. Base 2. Collector S Type 15 3. Emitter 3 4. Collector L Type2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Voge 35 Vv Collector to emitter voltage Voeo 35 Vv Emitter to base voltage Viso -5 Vv Collector current lo 2.5 A Collector peak current | opeat -3 A Collector power dissipation P.* 18 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value at T, = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown = Vaacgg 439 3 _ _ Vv |, =1 mA, |, =0 voltage Collector to emitter breakdown Vance. 35 _ _ Vv |, =-10 mA, R,, = voltage Emitter to base breakdown Veneso O _ _ Vv |. =1 mA, |, =0 voltage Collector cutoff current lopo _ _ 20 pA Vig = 35 V, 1, =0 DC current transfer ratio Hees 60 _ 320 Voe =

2SB1407(L)/(S) Silicon PNP Epitaxial ADE-208-876 (Z) 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO -35 -- -- V I C = -1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage -35 -- -- V I C = -10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO -5 -- -- V I E = -1 mA, IC = 0 Collector cutoff current I CBO -- -- -20 A VCB = -

diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SB1407(L)/(S) Silicon PNP Epitaxial ADE-208-876 (Z) 1st. Edition September 2000 Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 L Type 1. Base 2. Collector 3. Emitter 4. Collector 2SB1407(L)/(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO -35 V Collector to emitter voltage VCEO -35 V Emitter to base voltage VEBO -5 V Collector current IC -2.5 A Collector peak current I C(peak) -3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base br

2SB1407(L)/(S) Silicon PNP Epitaxial HITACHI Application Low frequency power amplifier complementary Pair with 28D2121(LV(S) Outline DPAK 4 4 \ 2 3 1. Base 2. Collector S Type lo 3. Emitter 3 4. Collector L Type2SB1407(L)(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage Voeno 35 V Collector to emitter voltage Voce 35 V Emitter to base voltage Vero -5 V Collector current I. 2.5 A Collector peak current | eipeaky -3 A Collector power dissipation P,* 18 Ww Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Note: 1. Value atT, = 25C. Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown = Vers, 30 _ _ Vv |, =1 mA, |. =O voltage Collector to emitter breakdown Vorceq 39 _ _ Vv .=10 mA, A, = voltage Emitter to base breakdown Veress 9 9 _ _ Vv -=-1mA,|,=0 voltage Collector cutoff current lesa _ _ -20 HA Vig = 35 V,1,=0 DC current transfer ratio hee, * 60 _ 320 Vie =-2V, |, =-0.5

23.4 1.7 1 1.2 1.5 1.8 1.6 1.8 1.62 0.2 0.2 0.2 0.2 0.9 0.9 0.9 0.9 0.2 0.9 91 Transistors and Diodes Quick Reference Guide to Hitachi Semiconductor Devices Bipolar Power Transistors * General Purpose Type No. Maximum ratings Package Main characteristics 2SB1407(L)/(S) 2SB1409(L)/(S) 2SD2121(L)/(S) 2SD2122(L)/(S) 2SD2123(L)/(S) 2SA715 2SA743 2SA743A 2SA1810 2SB649 2SB649A DPAK DPAK DPAK DPAK DPAK TO-126 MOD TO-126 MOD TO-126 MOD TO-126 MOD TO-126 MOD TO-126 MOD VCEO (V) -35 -160 35 120 160 -35 -50 -80 -200 -120 -160 2SC1162 2SC1212 TO-126 MOD TO-126 MOD 35 50 2.5 1.0 60 - 320 60 - 200 1.0 1.5 2SC1212A 2SC2611 TO-126 MOD TO-126 MOD 80 300 1.0 0.1 60 - 200 30 - 200 1.5 1.5 2SC4046 2SD669 2SD669A 2SD1609 2SD1610 2SC5390 2SD2491 2SD2492 2SB857 2SB858 2SB859 2SB860 2SB861 2SD1133 2SD1134 2SD1135 TO-126 MOD TO-126 MOD TO-126 MOD TO-126 MOD TO-126 MOD TO-126FM TO-126FM TO-126FM TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB TO-220AB 120 120 160 160 200 110 160 200 -50 -60 -80 -100 -150

2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current I C(peak) 3 A 18 W 1 Collector power dissipation PC * Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. 2SD2121(L)/(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 -- -- V I C = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 -- -- V I C = 10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- V I E = 1 mA, IC = 0 Collector cutoff current I CBO -- -- 20 A VCB = 35 V, IE = 0 60 -- 320 VCE = 2 V, IC = 0.5 A*2 hFE2 20 -- -- VCE = 2 V, IC = 1.5 A*2 Base to emitter voltage VBE -- -- 1.5 V VCE = 2 V, IC = 1.5 A*2 Collector to emitte

Signal Transistors) Status CBT CBT CBT CBT Package TO-92 Type No. HIT9011 HIT9016 Ratings VCEO IC (V) (A) 20 0.1 20 20 m Characteristics Cob fT (GHz) NF (dB) typ typ f (GHz) (pF) max - Status Power Transistors *General Amplification Package DPAK Type No. 2SB1407(L)/(S) 2SB1409(L)/(S) 2SD2121(L)/(S) 2SD2122(L)/(S) 2SD2123(L)/(S) Ratings VCEO IC (V) (A) -35 -2.5 -160 -1.5 35 2.5 120 1.5 160 1.5 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 200 -1.0 60 to 320 1.0 60 to 200 1.0 60 to 200 1.0 Status O O O * O Package TO-220 AB Type No. 2SB857 2SB858 2SB859 2SB860 2SB861 2SD1133 2SD1134 2SD1135 Ratings VCEO IC (V) (A) -50 -4.0 -60 -4.0 -80 -4.0 -100 -4.0 -150 -2.0 50 4.0 60 4.0 80 4.0 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 320 -1.0 60 to 200 -2.0 50 to 250 -1.0 60 to 200 -3.0 60 to 320 1.0 60 to 320 1.0 60 to 200 2.0 Status O O O O O O O O *General Switching Ratings Package Type No. DPAK 2SC4499(L)/(S) 2SD2115(L)/(S) TO-220 2SB566(K) AB 2SB566A(K) 2SC2612 2SC2613 2SC2816

b fT (GHz) NF (dB) typ typ f (GHz) (pF) max -- -- -- -- Status # # # # #CBT # #CBT # #CBT # # # # Note) #: Large order device (Unit: Refer packing unit (P.19)) CBT : Center Base Type 9 Power Transistors !General Amplification Package Type No. DPAK(L)-(1)/ 2SB1407(L)/(S) (S) 2SB1409(L)/(S) 2SD2121(L)/(S) 2SD2122(L)/(S) 2SD2123(L)/(S) Ratings VCEO IC (V) (A) -35 -2.5 -160 -1.5 35 2.5 120 1.5 160 1.5 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 200 -1.0 60 to 320 1.0 60 to 200 1.0 60 to 200 1.0 Status Package TO-220 AB Type No. 2SB857 2SB858 2SB859 2SB860 2SB861 2SD1133 2SD1134 2SD1135 Ratings VCEO IC (V) (A) -50 -4.0 -60 -4.0 -80 -4.0 -100 -4.0 -150 -2.0 50 4.0 60 4.0 80 4.0 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 320 -1.0 60 to 200 -2.0 50 to 250 -1.0 60 to 200 -3.0 60 to 320 1.0 60 to 320 1.0 60 to 200 2.0 Status !General Switching Ratings Package DPAK(L)-(1)/ (S) TO-220 AB Type No. 2SD2115(L)/(S) 2SC4499(L)/(S) 2SB566(K) 2SB566A(K) 2SD476(K) 2SD476A(K) 2SD1137 2SD1

2SB1407(L)/(S) Outline DPAK 4 4 1 2 3 S Type 12 3 1. Base 2. Collector 3. Emitter 4. Collector L Type Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Collector to base voltage VCBO 35 V Collector to emitter voltage VCEO 35 V Emitter to base voltage VEBO 5 V Collector current IC 2.5 A Collector peak current IC(peak) 3 A 18 W 1 Collector power dissipation PC* Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Note: 1. Value at TC = 25C. 2SD2121(L)/(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test conditions Collector to base breakdown voltage V(BR)CBO 35 -- -- V IC = 1 mA, IE = 0 Collector to emitter breakdown V(BR)CEO voltage 35 -- -- V IC = 10 mA, RBE = Emitter to base breakdown voltage V(BR)EBO 5 -- -- V IE = 1 mA, IC = 0 Collector cutoff current ICBO -- -- 20 A VCB = 35 V, IE = 0 60 -- 320 VCE = 2 V, IC = 0.5 A* 2 hFE2 20 -- -- VCE = 2 V, IC = 1.5 A* 2 Base to emitter voltage VBE -- -- 1.5 V VCE = 2 V, IC = 1.5 A* 2 Collector to emitter s

2.2 56 22 20 4.7 70 47 R1/R2 typ 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Status Note) : Large order device (Unit: Refer packing unit (P.19)) CBT : Center Base Type 9 Power Transistors General Amplification Package Type No. DPAK(L)-(1)/ 2SB1407(L)/(S) (S) 2SB1409(L)/(S) 2SD2121(L)/(S) 2SD2122(L)/(S) 2SD2123(L)/(S) Ratings VCEO IC (V) (A) -35 -2.5 -160 -1.5 35 2.5 120 1.5 160 1.5 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 200 -1.0 60 to 320 1.0 60 to 200 1.0 60 to 200 1.0 Status Package TO-220 AB Type No. 2SB857 2SB858 2SB859 2SB860 2SB861 2SD1133 2SD1134 2SD1135 Package TO-220 AB Type No. 2SC2898 2SC2979 2SD1527 2SC5273 2SC4913 2SB1392 2SB1530 2SD2107 2SD2337 2SC5022 2SC3336 2SC3365 Ratings VCEO IC (V) (A) -50 -4.0 -60 -4.0 -80 -4.0 -100 -4.0 -150 -2.0 50 4.0 60 4.0 80 4.0 Characteristics VCE(sat) hFE (V) max 60 to 320 -1.0 60 to 320 -1.0 60 to 200 -2.0 50 to 250 -1.0 60 to 200 -3.0 60 to 320 1.0 60 to 320 1.0 60 to 200 2.0 Status General Switching Ratings Packag