BAW56W / BAV99W Surface Mount Switching Diode SWITCHING DIODE 200-215m AMPERRES 70-75 VOLTS Features: *Low Current Leakage *Low Forward Voltage *Reverse Recover Time Trr 6ns *Small Outline Surface Mount SOT-323 Package 3 1 2 SOT-323(SC-70) SOT-323 Outline Demensions Unit:mm A B T OP V IE W C D E G H K J WEITRON http://www.weitron.com.tw L M Dim A B C D E G H J K L M SOT-323 Min 0.30 1.15 2.00 0.30 1.20 1.80 0.00 0.80 0.42 0.10 Max 0.40 1.35 2.40 0.65 0.40 1.40 2.20 0.10 1.00 0.53 0.25 BAS16W / BAV70W BAW56W / BAV99W Maximum Ratings (EACH DIODE) Characteristic Symbol Reverse Voltage Forward Current VR IF Peak Forward Surge Current IFM BAS16W BAV70W BAW56W BAV99W 70 75 215 200 500 Unit Volts mAdc mAdc Thermal Characteristics Max Unit 200 1.6 625 mW mW/ C R qJA 300 2.4 417 mW mW/ C C/W TJ, Tstg -55 to + 150 Symbol Characteristic Total Device Dissipation FR-5 Board *1, TA=25 C Derate Above 25 C PD Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substr

mmon anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (

BAW56W High-speed double diode Product specification Supersedes data of 1996 Sep 17 1999 May 11 Philips Semiconductors Product specification High-speed double diode BAW56W FEATURES DESCRIPTION * Very small plastic SMD package The BAW56W consists of two high-speed switching diodes with common anodes, fabricated in planar technology, and encapsulated in the very small SOT323 plastic SMD package. * High switching speed: max. 4 ns * Continuous reverse voltage: max. 75 V * Repetitive peak reverse voltage: max. 85 V PINNING PIN DESCRIPTION 1 cathode (k1) 2 cathode (k2) 3 common anode * Repetitive peak forward current: max. 500 mA. 2 1 APPLICATIONS * High-speed switching in e.g. surface mounted circuits. 2 1 3 3 MAM092 Top view Marking code: A1. Fig.1 Simplified outline (SOT323; SC-70) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode VRRM repetitive peak reverse voltage VR continuou

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage Rating VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Subst

mmon anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (

5 4.0 150 2.0 1.0 50 1.0 75 Fig. 1 BAS19W BAS20W BAS21W 120 200 250 50 50 50 200 200 200 2.5 2.5 2.5 1.0 1.0 1.0 100 100 100 0.1 0.1 0.1 100 150 200 Fig. 1 Fig. 1 Fig. 1 BAV70W 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 3 BAV99W 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 4 BAW56W 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 2 MMBD4148W 75 4.0 150 2.0 1.0 50 1.0 75 Fig. 1 MMBD4448W 75 4.0 250 4.0 1.0 100 2.5 75 Fig. 1 350mW Switching Diodes / SOT-23 BAL99 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 5 BAW56 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 2 BAV70 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 3 BAV99 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 4 BAS16 75 4.0 150 2.0 1.0 50 1.0 75 Fig. 1 MMBD914 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 1 MMBD4148 75 4.0 150 2.0 1.0 50 2.5 75 Fig. 1 MMBD4448 75 4.0 250 4.0 1.0 100 2.5 75 Fig. 1 MMBD4448H 80 4.0 250 4.0 1.0 100 0.1 70 Fig. 1 MMBD7000 BAS19* BAS20* BAS21* BAS31 BAV23S* 75 4.0 150 2.0 1.25 150 1.0 50 Fig. 4 120 200 250 50 50 50 200 200 200 2.5 2.5 2.5 1.0 1.0 1.0 100 100 100 0.1 0.1 0.1 100 150 200 Fig. 1 Fig. 1 Fig. 1

BAW56WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.6 mW/C RJA 0.625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 419-04, STYLE 4 SC-70/SOT-323 CATHODE 1 3 ANODE 2 DEVICE MARKING BAW56WT1 = A1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 30 2.5 50 -- 2.0 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc

BAW56W DUAL SURFACE MOUNT SWITCHING DIODE Features * * * * * Mechanical Data * * Fast Switching Speed Small Surface Mount Package For General Purpose Switching Applications Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) * * * * Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.006 grams (approximate) SOT323 Top View Internal Schematic Top View Ordering Information (Notes 3 & 4) Part Number BAW56W-7-F BAW56WQ-7-F Notes: Qualification Commercial Automotive Case SOT323 SOT323 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code 0627 (week 27, 2006)

mmon anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features n High switching speed: trr 4 ns n Low leakage current n Small SMD plastic packages n Low capacitance: Cd 2 pF n Reverse voltage: VR 90 V 1.3 Applications n High-speed switching n General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (diode 1) 2 cathode

1N5246B 1N5248B 1N5248B 1N5248B 1N5250B 1N5250B 1N5258B 1N5251B 1N5251B 1N5251B 1N5252B 1N5252B 1N5252B 1N5254B 1N5254B 1N5254B 1N5256B 1N5256B 1N5256B 1N5257B 1N5257B 1N5257B 1N5258B 1N5258B 1N5259B 1N5260B 1N5261B 1N5262B 1N5263B 1N5265B 1N5266B 1N5267B BAW56W N/A 1PS301 N/A 1PS765B21 1PS76SB10 1PS76SB21 1PS76SB40 1PS79SB10 1PS79SB30 1PS79SB31 1PS79SB40 1PS88SB48 1PS88SB82 1PS89SB14 1PS89SS04 1PS89SS05 1PS89SS06 1S1834 N/A 1S1835 N/A 1S20 N/A 1S30 N/A 1S355 N/A 1S376 N/A 1S50 N/A 1S60 N/A 1S922 N/A 1S923 N/A 1SMA10A SMAJ10A 1SMA10AT3 1SMA10CA 1SMA10CAT3 1SMA11A SMAJ11A 1SMA11AT3 1SMA11CA 1SMA11CAT3 1SMA12A SMAJ12A 1SMA12AT3 1SMA12CA 1SMA12CAT3 1SMA13A SMAJ13A 1SMA13AT3 1SMA13CA 1SMA13CAT3 1SMA14A SMAJ14A 1SMA14AT3 1SMA14CA 1SMA14CAT3 1SMA15A SMAJ15A 1SMA15AT3 1SMA15CA 1SMA15CAT3 1SMA16A SMAJ16A 1SMA16AT3 1SMA16CA 1SMA16CAT3 1SMA17A SMAJ17A 1SMA17AT3 1SMA17CA 1SMA17CAT3 1SMA18A SMAJ18A 1SMA18AT3 1SMA18CA 1SMA18CAT3 1SMA20A SMAJ20A 1SMA20AT3 1SMA20CA 1SMA20CAT3 1SMA22A SMAJ22A 1SMA22AT3 1SMA22CA

BAW56W/BAV99W/BAL99W List List................................................................................................. 1 Package outline............................................................................... 2 Features.......................................................................................... 2 Mechanical data............................................................................... 2 Maximum ratings ............................................................................. 2 Rating and characteristic curves........................................................ 3~4 Pinning information........................................................................... 5 Marking........................................................................................... 5 Suggested solder pad layout............................................................. 5 Packing information.......................................................................... 6 Reel packing

BAW56W DUAL SURFACE MOUNT SWITCHING DIODE Features * * * * * Mechanical Data * * Fast Switching Speed Small Surface Mount Package For General Purpose Switching Applications Lead Free/RoHS Compliant (Note 1) "Green" Device (Notes 2 and 3) * * * * Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, Note 5. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish annealed over Alloy 42 leadframe (Lead Free Plating) Solderable per MIL-STD-202, Method 208 Polarity: See Diagram Weight: 0.006 grams (approximate) SOT323 Top View Internal Schematic Top View Ordering Information (Notes 3 & 4) Part Number BAW56W-7-F BAW56WQ-7-F Notes: Qualification Commercial Automotive Case SOT323 SOT323 Packaging 3000/Tape & Reel 3000/Tape & Reel 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com. 3. Product manufactured with Date Code 0627 (week 27, 2006)

mmon anode/common cathode BAW56 SOT23 - TO-236AB small dual common anode BAW56M SOT883 SC-101 - leadless ultra small dual common anode BAW56S SOT363 SC-88 - very small quadruple common anode/common anode BAW56T SOT416 SC-75 - ultra small dual common anode BAW56W SOT323 SC-70 - very small dual common anode 1.2 Features and benefits High switching speed: trr 4 ns Low leakage current Small SMD plastic packages Low capacitance: Cd 2 pF Reverse voltage: VR 90 V AEC-Q101 qualified 1.3 Applications High-speed switching General-purpose switching 1.4 Quick reference data Table 2. Symbol Quick reference data Parameter Conditions Min Typ Max Unit IR reverse current VR = 80 V - - 0.5 A VR reverse voltage - - 90 V trr reverse recovery time - - 4 ns Per diode [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA. BAV756S; BAW56 series NXP Semiconductors High-speed switching diodes 2. Pinning information Table 3. Pin Pinning Description Simplified outline Symbol BAV756S 1 anode (

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage Rating VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Subst

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features www.onsemi.com * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junctio