BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage Rating VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Subst

BAW56WT1 ON Semiconductor Preferred Device MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 200 mW 1.6 mW/C RJA 0.625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -55 to +150 C Peak Forward Surge Current 3 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 TA = 25C Derate above 25C Board(1) Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature CASE 419-04, STYLE 4 SC-70/SOT-323 CATHODE 1 3 ANODE 2 DEVICE MARKING BAW56WT1 = A1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- 30 2.5 50 -- 2.0 -- -- -- -- 715 855 1000 1250 -- 6.0 OFF CHARACTERISTICS Reverse Breakdown Voltage (I(BR) = 100 Adc) Reverse Voltage Leakage Current (VR = 25 Vdc, TJ = 150C) (VR = 70 Vdc) (VR = 70 Vdc

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features http://onsemi.com AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage Rating VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Subst

109 503 485 487 167 178 183 500 176 485 487 165 General-Purpose Signal and Switching Diodes Device M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 DAP202U MMSD914T1 VR Min Volts IR Max A 40 40 80 80 40 40 80 80 75 40 80 100 80 80 70 70 70 70 40 40 - 100 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.02 0.1 0.1 5.0 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 0.1 5.0 VF trr Max ns Type Min Volts Max Volts CT Max pF - - - - - - - - - - - - - - - - - 10 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.25 1.2 1.2 1.0 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 1.2 1.0 2.0 2.0 2.0 2.0 15 2.0 15 2.0 2.0 2.0 2.0 4.0 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.5 4.0 3.0 3.0 3.0 3.0 10 3.0 10 3.0 6.0 3.0 3.0 4.0 3.0 10 6.0 6.0 6.0 6.0 3.0 10 10 4.0 Single Single Single Single Dual Common Anode Dual Common Cathode Dual Common Anode Dual Common Cathode Single Single Single Single Dual Common Cathode Dual

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features www.onsemi.com * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junctio

BAW56WT1 Preferred Device Dual Switching Diode Features * Pb-Free Package is Available http://onsemi.com MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Characteristic Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature 2 CATHODE MARKING DIAGRAM 3 Symbol Max Unit PD 200 mW 1.6 mW/C RqJA 0.625 C/W PD 300 mW 2.4 mW/C RqJA 417 C/W TJ, Tstg -55 to +150 C A1 M G G SC-70 CASE 419 STYLE 4 1 1 2 THERMAL CHARACTERISTICS (TA = 25C) Total D

BAW56WT1G, SBAW56WT1G Dual Switching Diode, Common Anode Features www.onsemi.com * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current CATHODE 1 ANODE 3 2 CATHODE MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A1 M G G THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junctio

BAW56WT1G, SBAW56WT1G Features www.onsemi.com * S Prefix for Automotive and Other Applications Requiring Unique * Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant SC-70 CASE 419 STYLE 4 MAXIMUM RATINGS (TA = 25C) Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA Peak Forward Surge Current IFM(surge) 500 mA Forward Surge Max Current (Single Square Wave) IFSM Rating 1 s 1 ms 1s 2 CATHODE MARKING DIAGRAM A 4 1 0.5 CATHODE 1 ANODE 3 A1 M G G Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Der

BAW56WT1 Preferred Device Dual Switching Diode, Common Anode Features * Pb-Free Package is Available http://onsemi.com CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. MARKING DIAGRAM 3 1 SC-70 CASE 419 STYLE 4 2 A1 M G G 1 THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.6 mW/C RJA 625 C/W PD 300 mW 2.4 mW/C R

BAW56WT1 Preferred Device Dual Switching Diode Features * Pb-Free Package is Available http://onsemi.com MARKING DIAGRAM MAXIMUM RATINGS (TA = 25C) Rating 3 Symbol Max Unit Reverse Voltage VR 70 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Peak Forward Surge Current Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature SC-70 CASE 419 STYLE 4 1 A1 D 2 1 A1 D 2 = Specific Device Code = Date Code ORDERING INFORMATION THERMAL CHARACTERISTICS (TA = 25C) Charac

109 503 485 487 167 178 183 500 176 485 487 165 General-Purpose Signal and Switching Diodes Device M1MA151AT1 M1MA151KT1 M1MA152AT1 M1MA152KT1 M1MA151WAT1 M1MA151WKT1 M1MA152WAT1 M1MA152WKT1 BAS16WT1 M1MA141KT1 M1MA142KT1 M1MA174T1 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 DAP202U MMSD914T1 VR Min Volts IR Max A 40 40 80 80 40 40 80 80 75 40 80 100 80 80 70 70 70 70 40 40 - 100 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.1 0.02 0.1 0.1 5.0 0.1 0.1 2.5 5.0 2.5 2.5 0.1 0.1 0.1 5.0 VF trr Max ns Type Min Volts Max Volts CT Max pF - - - - - - - - - - - - - - - - - 10 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.2 1.25 1.2 1.2 1.0 1.2 1.2 1.0 1.0 1.0 1.0 1.2 1.2 1.2 1.0 2.0 2.0 2.0 2.0 15 2.0 15 2.0 2.0 2.0 2.0 4.0 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.5 4.0 3.0 3.0 3.0 3.0 10 3.0 10 3.0 6.0 3.0 3.0 4.0 3.0 10 6.0 6.0 6.0 6.0 3.0 10 10 4.0 Single Single Single Single Dual Common Anode Dual Common Cathode Dual Common Anode Dual Common Cathode Single Single Single Single Dual Common Cathode Dual

BAW56WT1G Dual Switching Diode, Common Anode Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant CATHODE 1 ANODE 3 2 CATHODE MAXIMUM RATINGS (TA = 25C) Rating Symbol Max Unit Reverse Voltage VR 70 V Forward Current IF 200 mA IFM(surge) 500 mA Peak Forward Surge Current Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS (TA = 25C) Characteristic Total Device Dissipation FR-- 5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction--to--Ambient Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction--to--Ambient Junction and Storage Temperature Symbol Max Unit PD 200 mW 1.6 mW/C RJA 625 C/W PD 300 mW 2.4 mW/C RJA 417 C/W TJ, Tstg -- 55

BAW56WT1G Features * We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 CASE 419-04, STYLE 4 SOT-323 (SC-70) MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltag Forward Current Peak Forward Surge Current Symbol Max Unit VR 70 200 500 Vdc mAdc mAdc IF IFM(surge) CATHODE 2 CATHODE 1 3 ANODE Ordering Information Device Marking Shipping LBAW56WT1G A1 3000/Tape&Reel LBAW56WT3G A1 10000/Tape&Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW RJA PD 1.6 0.625 300 mW/C C/W mW RJA TJ, Tstg 2.4 417 -55 to +150 mW/C C/W C Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- -- 30 2.5 50 2.0 -- -- -- -- -- 715 855 1000 1250 6.0 ELECTRICAL CHARACTERISTICS (TA = 25C unles

BAW56WT1G Features * We declare that the material of product compliance with RoHS requirements. 3 1 DEVICE MARKING 2 LBAW56WT1G = A1 SC-70 MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltag Forward Current Peak Forward Surge Current Symbol Max Unit VR 70 200 500 Vdc mAdc mAdc IF IFM(surge) CATHODE 2 CATHODE 1 3 ANODE Ordering Information Device Marking Shipping LBAW56WT1G A1 3000/Tape&Reel LBAW56WT3G A1 10000/Tape&Reel THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board(1) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate(2) TA = 25C Derate above 25C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 200 Unit mW RJA PD 1.6 0.625 300 mW/C C/W mW RJA TJ, Tstg 2.4 417 -55 to +150 mW/C C/W C Symbol Min Max Unit V(BR) 70 -- Vdc -- -- -- -- 30 2.5 50 2.0 -- -- -- -- -- 715 855 1000 1250 6.0 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characterist

50 50 100 100 2.0 15 2.0 1.5 1.5 1.5 2.0 15 3.0 10 6.0 6.0 6.0 6.0 3.0 10 5 4 4 5 9 10 5 4 70 -- 1.2 100 3.5 4.0 4 70 -- 1.2 100 3.5 4.0 5 CT(30) trr Case 318D-04 -- SC-59 M1MA151WAT1 M1MA151WKT1 MN MT Case 419-02 -- SC-70/SOT-323 M1MA142WKT1 M1MA142WAT1 BAW56WT1 BAV70WT1 BAV99WT1 BAV99RWT1 M1MA141WKT1 M1MA141WAT1 MU MO A1 A4 A7 F7 MT MN 80 80 70 70 70 70 40 40 Case 463-01 -- SOT-416/SC-90 (Common Anode) DAP222 P9 80 100 100 Case 463-01 -- SOT-416/SC-90 (Common Cathode) DAN222 N9 80 100 100 Table 48. Low-Leakage Medium Speed Switching Diodes -- Single V(BR)R Device Marking Min Volts @ IBR (A) IR VF Max (nA) @ VR Volts Min Volts Max Volts @ IF (mA) Max (pF) Max (ns) Case Style 100 100 5.0 0.5 75 30 -- -- 1.0 0.95 10 10 2.0 2.0 3000 3000 8 6 30 100 0.5 30 -- 0.95 10 2.0 3000 2 30 100 0.5 30 -- 0.95 10 2.0 3000 2 30 100 0.5 30 -- 0.95 10 2.0 3000 1 Case 318-08 -- TO-236AB (SOT-23) BAS116LT1 MMBD1000LT1 JV AY 75 30 Case 419-02 -- (SOT-323)/(SC-70) MMBD2000T1 DH Case 318D-04 -- (SC-59) MMBD3000T1 XP