BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC546 BC547 BC548 Collector - Base Voltage Vdc 65 45 30 3 EMITTER VCBO BC546 BC547 BC548 Emitter - Base Voltage 2 BASE Unit Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C MARKING DIAGRAM Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54x AYWWG G Operating and Storage Junction Temperature Range 1 2 TO-92 CASE 29 STYLE 17 3 THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC546 BC547 BC548 Collector - Base Voltage Vdc 65 45 30 3 EMITTER VCBO BC546 BC547 BC548 Emitter - Base Voltage 2 BASE Unit Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C MARKING DIAGRAM Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54x AYWWG G Operating and Storage Junction Temperature Range 1 2 TO-92 CASE 29 STYLE 17 3 THERMAL CHARACTERISTICS Characteristic Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Package is Available* COLLECTOR 1 2 BASE MAXIMUM RATINGS Rating Symbol Collector-Emitter Voltage Value VCEO BC546 BC547 BC548 Collector-Base Voltage Vdc 65 45 30 MARKING DIAGRAM VCBO BC546 BC547 BC548 Emitter-Base Voltage Vdc TO-92 CASE 29 STYLE 17 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 3 EMITTER Unit Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 BC 54xx YWW 3 BC54xx = Specifi

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Symbol Collector - Emitter Voltage Value VCEO BC546 BC547 BC548 Collector - Base Voltage Vdc 65 45 30 3 EMITTER VCBO BC546 BC547 BC548 Emitter - Base Voltage Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W Operating and Storage Junction Temperature Range 2 BASE Unit THERMAL CHARACTERISTICS TO-92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD BULK PACK 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommend

BC547A BC547B BC547C BC548B BC548C Amplifier Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol BC546 BC547 BC548 Unit Collector-Emitter Voltage VCEO 65 45 30 Vdc Collector-Base Voltage VCBO 80 50 30 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current -- Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 Watt mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 1 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RJA 200 C/W Thermal Resistance, Junction to Case RJC 83.3 C/W 3 CASE 29-04, STYLE 17 TO-92 (TO-226AA) COLLECTOR 1 2 BASE 3 EMITTER ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO 65 45 30 -- -- -- -- -- -- V Collector-Base Breakdown Voltage (IC = 100 Ad

ambient Rth(j-a) 250 www.rectron.com BC548 30 30 30 5 UNITS V V V V mA mA mA mW o o o C C C/W 1 of 3 BC546 BC547 BC548 Electrical Characteristics (Ta=25 oC unless otherwise specified) DESCRIPTION Collector Emitter Voltage BC546/BC546A/BC546B/BC546C BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C SYMBOL TEST CONDITION IC = 1mA, IB = 0 VCEO Collector Base Voltage BC546/BC546A/BC546B/BC546C BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Emitter Base Voltage BC546/BC546A/BC546B/BC546C BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C VCBO VEBO Collector Cut off Current ICBO Collector Cut off Current ICES BC546/BC546A/BC546B/BC546C BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C BC546/BC546A/BC546B/BC546C BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Base Emitter On Voltage VBE(on) Collector Emitter Saturation Voltage VCE(Sat) Base Emitter Saturation Voltage DC Current Gain VBE(Sat) hFE MIN TYP MAX 65 45 30 UNITS V IC

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547 BC548 Emitter - Base Voltage VCEO VCBO Value Vdc 65 45 30 3 EMITTER Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE Unit THERMAL CHARACTERISTICS TO-92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD 2 3 BENT LEAD TAPE & REEL MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54xy AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547 BC548 Emitter - Base Voltage VCEO VCBO Value Vdc 65 45 30 3 EMITTER Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE Unit THERMAL CHARACTERISTICS TO-92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD 2 3 BENT LEAD TAPE & REEL MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54xy AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

ur Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2004 May, 2004 - Rev. 4 322 Publication Order Number: BC546/D BC546B, BC547A, B, C, BC548B, C ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage (IC = 1.0 mA, IB = 0) BC546 BC547 BC548 V(BR)CEO 65 45 30 - - - - - - V Collector - Base Breakdown Voltage (IC = 100 Adc) BC546 BC547 BC548 V(BR)CBO 80 50 30 - - - - - - V Emitter - Base Breakdown Voltage (IE = 10 A, IC = 0) BC546 BC547 BC548 V(BR)EBO 6.0 6.0 6.0 - - - - - - V - - - - 0.2 0.2 0.2 - 15 15 15 4.0 nA - - - 90 150 270 - - - Collector Cutoff Current (VCE = 70 V, VBE = 0) (VCE = 50 V, VBE = 0) (VCE = 35 V, VBE = 0) (VCE = 30 V, TA = 125C) ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) BC546 BC547 BC548 BC546/547/548 BC547A BC546B/

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547 BC548 Emitter - Base Voltage VCEO VCBO Value Vdc 65 45 30 3 EMITTER Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE Unit THERMAL CHARACTERISTICS TO-92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD 2 3 BENT LEAD TAPE & REEL MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54xy AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended

ackage name. http://onsemi.com 7 Bipolar Transistors General-Purpose Transistors NPN - BC449 BC449A BC447 MPS8099 MPSA06 2N4410 - BC546 BC546B BC487 BC487B MPSA05 - - BC182 BC182A BC182B BC237 BC237A BC237B BC237C BC337 BC337-16 BC337-25 BC337-40 BC550C - BC547A BC547B BC547C MPSA18 MPSA20 MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C - MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338-25 MPS4124 - MPS5172 MPS6521 PNP MPSL51 - - - MPS8599 MPSA56 - MPS6729 - BC556B - BC488B MPSA55 MPS2907A 2N5087 BC212 - BC212B - - BC307B BC307C BC327 BC327-16 BC327-25 BC327-40 BC560C BC557 BC557A BC557B BC557C - - - 2N4403 MPS6652 2N3906 BC558B BC558C BC213 - - - - - - - - MPS4126 - MPS6523 V(BR)CEO 100 100 100 80 80 80 80 80 65 65 60 60 60 60 50 50 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 25 25 25 25 25 25 25 25 25 IC mA Max Min 600 300 300 500 500 500 250 500 100 100 500 500 500 600 50 100 100 100 100 100 100 100 800 800 800 800 100 100 100 100 100 200 100 600 600 1000 200 100

PXTA42 Phi N SOT89 MPSA42 300V npn t1D PMBTA42 Phi N SOT23 MPSA42 300V npn t1D PMSTA42 Phi N SOT323 MPSA42 300V npn 1Ds BC846U Sie N SC74 BC456 1Ds BC846U Sie SOT363 BC456 1DN 2SC4083 Roh N 1DR MSD1328R Mot N SOT346 npn gp 25V 500mA 1E BC847A Phi N SOT23 BC547A 1E BC847AT Phi N SOT416 BC547A 1E BC847AT Dio N SOT523 BC547A 1Ep BC847A Phi N SOT23 BC547A 1Et BC847A Phi N SOT23 BC547A 1Et BC847A Phi N SOT323 BC547A 1E- BC847A Phi N SOT323 BC547A 1ER BC847AR Phi R SOT23R BC547A 1E FMMT-A43 Zet N 1E MMBTA43 Mot N SOT23 MPSA43 200V npn t1E PMBTA43 Mot N SOT23 MPSA43 200V npn t1E PMSTA43 Mot N SOT323 MPSA43 200V npn 1Es BC847A Sie N SOT23 BC457 1Es BC847AW Sie N SOT323 BC457 1EN 2SC4084 Roh N 1F BC847B Phi N SOT23 BC547B 1F BC847BT Phi N SOT416 BC547B 1F BC847BT Dio N SOT523 BC547B 1Fs BC847B Sie N SOT23 BC547B 1Fs BC847BT Sie N SC75 BC547B 1Fs BC847BW Sie N SOT323 BC547B 1Fp BC847B Phi N SOT23 BC547B 1Ft BC847B P

ackage name. http://onsemi.com 7 Bipolar Transistors General-Purpose Transistors NPN - BC449 BC449A BC447 MPS8099 MPSA06 2N4410 - BC546 BC546B BC487 BC487B MPSA05 - - BC182 BC182A BC182B BC237 BC237A BC237B BC237C BC337 BC337-16 BC337-25 BC337-40 BC550C - BC547A BC547B BC547C MPSA18 MPSA20 MPS2222A 2N4401 MPS6602 2N3904 BC548B BC548C - MPS2222 2N5088 2N5089 BC238B BC238C BC239C BC338-25 MPS4124 - MPS5172 MPS6521 PNP MPSL51 - - - MPS8599 MPSA56 - MPS6729 - BC556B - BC488B MPSA55 MPS2907A 2N5087 BC212 - BC212B - - BC307B BC307C BC327 BC327-16 BC327-25 BC327-40 BC560C BC557 BC557A BC557B BC557C - - - 2N4403 MPS6652 2N3906 BC558B BC558C BC213 - - - - - - - - MPS4126 - MPS6523 V(BR)CEO 100 100 100 80 80 80 80 80 65 65 60 60 60 60 50 50 50 50 45 45 45 45 45 45 45 45 45 45 45 45 45 45 40 40 40 40 40 30 30 30 30 30 25 25 25 25 25 25 25 25 25 IC mA Max Min 600 300 300 500 500 500 250 500 100 100 500 500 500 600 50 100 100 100 100 100 100 100 800 800 800 800 100 100 100 100 100 200 100 600 600 1000 200 100

222 2N2222 dual cc GP RF pin diode MPSA20 MPS3904 p-ch mosfet 20V 0.6A BC457 BC456 BC456 BC456 BC456 MPSA42 300V npn p-ch mosfet 30V 0.6A MPSA42 300V npn MPSA42 300V npn MPSA42 300V npn MPSA42 300V npn BC456 BC456 npn 11V 3.2GHz TV tuners npn gp 25V 500mA BC547A BC547A BC547A BC547A BC547A BC547A BC547A MPSA43 MPSA43 200V npn MPSA43 200V npn MPSA43 200V npn BC457 BC457 npn 20V 2.0GHz TV tuners BC547B BC547B BC547B BC547B BC547B BC547B BC547B BC547B BC547B BC547B 2N5550 140V npn 2N5550 140V npn 2N5550 140V npn 2N5550 140V npn 2N5550 140V npn BC547C BC547C BC547C BC547C BC547C BC547C 1Gs 1GR 1GT 1G 1G p1G t1G t1G 1GM 1Hp 1Ht 1Ht 1H1H 1H t1H 1HT 1J 1Js 1Js 1J 1J 1Js 1Jp p1J t1J t1J 1JA 1JR 1JZ 1K 1Kp 1Ks 1Ks 1K p1K t1K t1K 1K 1Ks 1Kp 1KR 1KM 1KZ 1L 1Lp 1Ls 1Ls 1L 1L 1L 1Lp p1L t1L t1L 1LR 1Mp 1M 1Mp 1M BC847CW BC847CR SOA06 FMMT-A06 MMBTA06 PMMTA06 PMMTA06 PMMTA06 MMBTA06 BC847 BC847 BC847W BC847W FMMT-A05 MMBTA05 MMBTA05

BC547A, B, C, BC548B, C Amplifier Transistors NPN Silicon Features http://onsemi.com * Pb-Free Packages are Available* COLLECTOR 1 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Symbol BC546 BC547 BC548 BC546 BC547 BC548 Emitter - Base Voltage VCEO VCBO Value Vdc 65 45 30 3 EMITTER Vdc 80 50 30 VEBO 6.0 Vdc Collector Current - Continuous IC 100 mAdc Total Device Dissipation @ TA = 25C Derate above 25C PD 625 5.0 mW mW/C Total Device Dissipation @ TC = 25C Derate above 25C PD 1.5 12 W mW/C TJ, Tstg -55 to +150 C Operating and Storage Junction Temperature Range 2 BASE Unit THERMAL CHARACTERISTICS TO-92 CASE 29 STYLE 17 1 12 3 STRAIGHT LEAD 2 3 BENT LEAD TAPE & REEL MARKING DIAGRAM Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Ambient RqJA 200 C/W Thermal Resistance, Junction-to-Case RqJC 83.3 C/W BC 54xy AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended