ad for good SOT89 heat transfer; 3 leads [1] Valid for all available selection groups. [2] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4. Marking Table 5. Marking codes Type number Marking code BC640 C640 BCP53 BCP53 BCP53-10 BCP53/10 BCP53-16 BCP53/16 BCX53 AH BCX53-10 AK BCX53-16 AL BC640_BCP53_BCX53_8 Product data sheet (c) NXP B.V. 2008. All rights reserved. Rev. 08 -- 22 February 2008 3 of 15 BC640; BCP53; BCX53 NXP Semiconductors 80 V, 1 A PNP medium power transistors 5. Limiting values Table 6. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -100 V VCEO collector-emitter voltage open base - -80 V VEBO emitter-base voltage open collector - -5 V IC collector current - -1 A ICM peak collector current single pulse; tp 1 ms - -1.5 A IBM peak base current single pulse; tp 1 ms - -0.2 A Ptot total power dissipation Tamb 25 C BC640 [1] - 0.83

applications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg -65 to +150 C 3 SOT-223 CASE 318E STYLE

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

pplications. *High Current: 1.5 Amps *NPN Complement is BCP56 *The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die *Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 *Pb-Free Packages are Available http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage VCEO -80 Vdc CollectorBase Voltage VCBO -100 Vdc EmitterBase Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD Operating and Storage Temperature Range TJ, Tstg 1 1.5 12 Watts mW/C -65 to +150 C Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath 2 MARKING DIAGRAM AYW XXXXXG G 3 SOT-223 CASE 318E STYLE 1 1 A Y W XXXXX G = Assembly Locatio

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

can be soldered using wave or reflow. The * * * * http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 W mW/C -65 to +150 C Symbol Max Unit RqJA 83.3 C/W 260 10 C s Operating and Storage Temperature Range TJ, Tstg BASE 1 EMITTER 3 MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating COLLECTOR 2,4 A Y W XXXXX G Thermal Resistance, Jun

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

223 1999 Jun 11 28 Philips Semiconductors Small Signal Transistors and Diodes TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE BCP52-16 BCP52/16 SC-73/SOT223 BCW30 C2p; C2t SOT23 BCP53 BCP53 SC-73/SOT223 BCW31 D1p; D1t SOT23 BCP53-10 BCP53/10 SC-73/SOT223 BCW32 D2p; D2t SOT23 BCP53-16 BCP53/16 SC-73/SOT223 BCW33 D3p; D3t SOT23 BCP54 BCP54 SC-73/SOT223 BCW60B ABp; ABt SOT23 BCP54-16 BCP54/16 SC-73/SOT223 BCW60C ACp; ACt SOT23 BCP55 BCP55 SC-73/SOT223 BCW60D ADp; ADt SOT23 BCP55-10 BCP55/10 SC-73/SOT223 BCW61B BBp; BBt SOT23 BCP55-16 BCP55/16 SC-73/SOT223 BCW61C BCp; BCt SOT23 BCP56 BCP56 SC-73/SOT223 BCW61D BDp; BDt SOT23 BCP56-10 BCP56/10 SC-73/SOT223 BCW69 H1p; H1t SOT23 BCP56-16 BCP56/16 SC-73/SOT223 BCW70 H2p; H2t SOT23 BCP68 BCP68 SC-73/SOT223 BCW71 K1p; K1t SOT23 BCP68-25 BCP68/25 SC-73/SOT223 BCW72 K2p; K2t SOT23 BCP69 BCP69 SC-73/SOT223 BCW89 H3p; H3t SOT23 BCP69-16 BCP/16 SC-73/SOT223 BCX17 T1p; T1t SOT23 BCP69-25 BCP/25 SC-73/SOT223 BCX18 T2p; T2t SOT23 BCV

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

BCP53-10/16 omponents 20736 Marilla Street Chatsworth !"# $ % !"# PNP Plastic-Encapsulate Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP54 ... BCP56 (NPN) Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix "-HF" SOT-223 Maximum Ratings @ 25oC Unless Otherwise Specified Charateristic Symbol Collector-Base Voltage BCP51-10/16 BCP52-10/16 V C B O Collector-Emitter Voltage BCP53-10/16 BCP51-10/16 BCP52-10/16 BCP53-10/16 VC E O V EBO Emitter-Base Voltage Collector Current-Continuous IC Thermal Resistance Junction to Ambient Collector Power Dissipation Operating & Storage Temperature Value -45 -60 -100 -45 -60 -80 -5.0 Unit 1.0 A V V V - RthJA 94 PC 1.5 Tj, T S T G -55~150 3 2 1 o C/W W o 1.BASE 2.COLLECTOR 3.EMITTER C DIM A M

223 1999 Jun 11 28 Philips Semiconductors Small Signal Transistors and Diodes TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE BCP52-16 BCP52/16 SC-73/SOT223 BCW30 C2p; C2t SOT23 BCP53 BCP53 SC-73/SOT223 BCW31 D1p; D1t SOT23 BCP53-10 BCP53/10 SC-73/SOT223 BCW32 D2p; D2t SOT23 BCP53-16 BCP53/16 SC-73/SOT223 BCW33 D3p; D3t SOT23 BCP54 BCP54 SC-73/SOT223 BCW60B ABp; ABt SOT23 BCP54-16 BCP54/16 SC-73/SOT223 BCW60C ACp; ACt SOT23 BCP55 BCP55 SC-73/SOT223 BCW60D ADp; ADt SOT23 BCP55-10 BCP55/10 SC-73/SOT223 BCW61B BBp; BBt SOT23 BCP55-16 BCP55/16 SC-73/SOT223 BCW61C BCp; BCt SOT23 BCP56 BCP56 SC-73/SOT223 BCW61D BDp; BDt SOT23 BCP56-10 BCP56/10 SC-73/SOT223 BCW69 H1p; H1t SOT23 BCP56-16 BCP56/16 SC-73/SOT223 BCW70 H2p; H2t SOT23 BCP68 BCP68 SC-73/SOT223 BCW71 K1p; K1t SOT23 BCP68-25 BCP68/25 SC-73/SOT223 BCW72 K2p; K2t SOT23 BCP69 BCP69 SC-73/SOT223 BCW89 H3p; H3t SOT23 BCP69-16 BCP/16 SC-73/SOT223 BCX17 T1p; T1t SOT23 BCP69-25 BCP/25 SC-73/SOT223 BCX18 T2p; T2t SOT23 BCV

et 1. Product profile 1.1. General description PNP medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package BCP53T NPN comlement Nexperia JEDEC SOT223 SC-73 BCP56T BCP53-10T BCP56-10T BCP53-16T BCP56-16T 1.2. Features and benefits * * * * High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified 1.3. Applications * * * * * Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers 1.4. Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -80 V IC collector current - - -1 A ICM peak collector current - - -2 A single pulse; tp 1 ms BCP53T series Nexperia 80 V, 1 A PNP medium power transistors Symbol Parameter Conditions Min Typ Max hFE DC current gain [1] 63 - 250 BCP53-10

. Product profile 1.1 General description PNP medium power transistors in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number BCP53T Package NPN complement NXP JEITA JEDEC SOT223 SC-73 - BCP56T BCP53-10T BCP56-10T BCP53-16T BCP56-16T 1.2 Features and benefits High collector current capability IC and ICM Three current gain selections High power dissipation capability AEC-Q101 qualified 1.3 Applications Linear voltage regulators MOSFET drivers High-side switches Power management Amplifiers 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - 80 V IC collector current - - 1 A ICM peak collector current - - 2 A single pulse; tp 1 ms BCP53T series NXP Semiconductors 80 V, 1 A PNP medium power transistors Table 2. Quick reference data ...continued Tamb = 25 C unless otherwise specified. Symbol hFE [1] Parameter

cations. * High Current: 1.5 A * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. The * * formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating MARKING DIAGRAM Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg -65 to +150 C Symbol Max Unit RqJA 83.3 C/W 260 10 C s Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Sold

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg -65 to +150 C Rating Stresses exceeding thos