80 60 60 500 1000 1000 1000 2000 500 40 100 160 100 75 40 160 250 400 250 - 160 BC635 BC636 45 500 40 250 BC368 BC369 20 1000 60 - MPSW01A MPSW51A 40 1000 50 MPSW01 MPSW51 30 1000 MMBTA06LT1 MMBTA56LT1 80 BCP56T1 BCP56-10T1 BCP56-16T1 PZT2222AT1 - BCP53T1 BCP53-10T1 BCP53-16T1 - PZT2907AT1 PZT651T1 BCP68T1 MHz Min 200/150 (Typ) 60 100 100 60 75 - 200/150 NF dB Max Package Page 0.3/0.5 227, 232 0.5 0.5 0.5 0.5 0.5 0.5 263, 266 227, 232 227, 232 263, 266 822 263, 266 TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 P - 263, 266 65 0.5 208 - 50 - 900, 917 50 - 50 - 500 100 - 100 - 80 80 80 40 60 1000 1000 1000 600 600 40 63 100 100 100 250 160 250 300 300 50 (Typ) 50 (Typ) 50 (Typ) 300 200 - - - - - PZT751T1 60 2000 75 - 75 - BCP69T1 25 1000 85 375 60 (Typ) - 324, 327 - NSL35TT1 35 1000 100 - - - 1043 - NSL12TT1 12 1000 100 - - - - NSL5TT1 5.0 1000 100 - - - - 80 1000 63 160 130 (Typ) - BCX56-10R1 (Typ) TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100 TO-236AB, SOT-23 Case 318-08 Page 1101 SOT 223 S

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

80 60 60 500 1000 1000 1000 2000 500 40 100 160 100 75 40 160 250 400 250 - 160 BC635 BC636 45 500 40 250 BC368 BC369 20 1000 60 - MPSW01A MPSW51A 40 1000 50 MPSW01 MPSW51 30 1000 MMBTA06LT1 MMBTA56LT1 80 BCP56T1 BCP56-10T1 BCP56-16T1 PZT2222AT1 - BCP53T1 BCP53-10T1 BCP53-16T1 - PZT2907AT1 PZT651T1 BCP68T1 MHz Min 200/150 (Typ) 60 100 100 60 75 - 200/150 NF dB Max Package Page 0.3/0.5 227, 232 0.5 0.5 0.5 0.5 0.5 0.5 263, 266 227, 232 227, 232 263, 266 822 263, 266 TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 P - 263, 266 65 0.5 208 - 50 - 900, 917 50 - 50 - 500 100 - 100 - 80 80 80 40 60 1000 1000 1000 600 600 40 63 100 100 100 250 160 250 300 300 50 (Typ) 50 (Typ) 50 (Typ) 300 200 - - - - - PZT751T1 60 2000 75 - 75 - BCP69T1 25 1000 85 375 60 (Typ) - 324, 327 - NSL35TT1 35 1000 100 - - - 1043 - NSL12TT1 12 1000 100 - - - - NSL5TT1 5.0 1000 100 - - - - 80 1000 63 160 130 (Typ) - BCX56-10R1 (Typ) TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100 TO-236AB, SOT-23 Case 318-08 Page 1101 SOT 223 S

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

80 60 60 500 1000 1000 1000 2000 500 40 100 160 100 75 40 160 250 400 250 - 160 BC635 BC636 45 500 40 250 BC368 BC369 20 1000 60 - MPSW01A MPSW51A 40 1000 50 MPSW01 MPSW51 30 1000 MMBTA06LT1 MMBTA56LT1 80 BCP56T1 BCP56-10T1 BCP56-16T1 PZT2222AT1 - BCP53T1 BCP53-10T1 BCP53-16T1 - PZT2907AT1 PZT651T1 BCP68T1 MHz Min 200/150 (Typ) 60 100 100 60 75 - 200/150 NF dB Max Package Page 0.3/0.5 227, 232 0.5 0.5 0.5 0.5 0.5 0.5 263, 266 227, 232 227, 232 263, 266 822 263, 266 TO-226AA, TO 226AA, TO-92 TO 92 Case 29-11 Page 1100 P - 263, 266 65 0.5 208 - 50 - 900, 917 50 - 50 - 500 100 - 100 - 80 80 80 40 60 1000 1000 1000 600 600 40 63 100 100 100 250 160 250 300 300 50 (Typ) 50 (Typ) 50 (Typ) 300 200 - - - - - PZT751T1 60 2000 75 - 75 - BCP69T1 25 1000 85 375 60 (Typ) - 324, 327 - NSL35TT1 35 1000 100 - - - 1043 - NSL12TT1 12 1000 100 - - - - NSL5TT1 5.0 1000 100 - - - - 80 1000 63 160 130 (Typ) - BCX56-10R1 (Typ) TO-226AE (1-WATT) TO-92 Case 29-10 Page 1100 TO-236AB, SOT-23 Case 318-08 Page 1101 SOT 223 S

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage Rating VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg C -65 to +150 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality

applications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg -65 to +150 C 3 SOT-223 CASE 318E STYLE

pplications. * High Current * NPN Complement is BCP56 * The SOT-223 Package can be soldered using wave or reflow. * * * The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1G = AH BCP53-10T1G = AH-10 BCP53-16T1G = AH-16 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2, 4 1 BASE EMITTER 3 MARKING DIAGRAM 4 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1) Derate above 25C PD 1.5 12 W mW/C Operating and Storage Temperature Range TJ, Tstg -65 to +150 C Rating Stresses exceeding thos

pplications. *High Current: 1.5 Amps *NPN Complement is BCP56 *The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die *Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 *Pb-Free Packages are Available MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage VCEO -80 Vdc CollectorBase Voltage VCBO -100 Vdc EmitterBase Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD Operating and Storage Temperature Range TJ, Tstg 1 1.5 12 Watts mW/C -65 to +150 C Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath 2 MARKING DIAGRAM AYW XXXXXG G 3 SOT-223 CASE 318E STYLE 1 1 A Y W XXXXX G = Assembly Location = Year = Work We

can be soldered using wave or reflow. The * * * * http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 W mW/C -65 to +150 C Symbol Max Unit RqJA 83.3 C/W 260 10 C s Operating and Storage Temperature Range TJ, Tstg BASE 1 EMITTER 3 MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating COLLECTOR 2,4 A Y W XXXXX G Thermal Resistance, Jun

, SOT-323 Case 419-04 419 04 SOT-416, SC-75, SC-90 463 01 Case 463-01 ON Semiconductor Selector Guide - Discrete Devices Bipolar Transistors General-Purpose Transistors NPN BCP56T1 BCP56-10T1 BCP56-16T1 - PZT651T1 PZT2222AT1 BCP68T1 BCX56-10R1 PNP BCP53T1 BCP53-10T1 BCP53-16T1 PZT2907AT1 PZT751T1 - BCP69T1 - IC mA Max Min 80 80 80 60 60 40 25 1000 1000 1000 600 2000 600 1000 80 1000 V(BR)CEO hFE fT NF Max MHz Min dB Max 40 63 100 100 75 100 85 250 160 250 300 - 300 375 50 (Typ) 50 (Typ) 50 (Typ) 200 75 300 60 (Typ) - - - - - - - 63 160 130 (Typ) - Package SOT-223 Case 318E-04 SOT-89 Case 1213-02 Devices listed in bold italic are ON Semiconductor preferred devices. http://onsemi.com 149 ON Semiconductor Selector Guide - Discrete Devices Bipolar Transistors General-Purpose Multiple Transistors Device BC846BDW1T1 BC856BDW1T1 BC846BPDW1T1 BC847BDW1T1 BC847CDW1T1 BC857BDW1T1 BC857CDW1T1 BC847BPDW1T1 BC847CPDW1T1 MBT3904DW1T1 MBT3906DW1T1 MBT3946DW1T1 MBT2222ADW1T1 BC848BDW1T1 BC848CDW1T1 BC858BDW1T1 B

pplications. *High Current: 1.5 Amps *NPN Complement is BCP56 *The SOT223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die *Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 *Pb-Free Packages are Available http://onsemi.com MEDIUM POWER HIGH CURRENT SURFACE MOUNT PNP TRANSISTORS COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit CollectorEmitter Voltage VCEO -80 Vdc CollectorBase Voltage VCBO -100 Vdc EmitterBase Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD Operating and Storage Temperature Range TJ, Tstg 1 1.5 12 Watts mW/C -65 to +150 C Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath 2 MARKING DIAGRAM AYW XXXXXG G 3 SOT-223 CASE 318E STYLE 1 1 A Y W XXXXX G = Assembly Locatio

d leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel. Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 Watts mW/C -65 to +150 C Rating Operating and Storage Temperature Range TJ, Tstg Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Semicon

d leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP53T1 to order the 7 inch/1000 unit reel. Use BCP53T3 to order the 13 inch/4000 unit reel. Device Marking: BCP53T1 = AH BCP53-10T1 = AH-10 BCP53-16T1 = AH-16 COLLECTOR 2,4 BASE 1 EMITTER 3 MAXIMUM RATINGS (TC = 25C unless otherwise noted) Symbol Value Unit Collector-Emitter Voltage VCEO -80 Vdc Collector-Base Voltage VCBO -100 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 1.5 Adc Total Power Dissipation @ TA = 25C (Note 1.) Derate above 25C PD 1.5 12 Watts mW/C -65 to +150 C Rating Operating and Storage Temperature Range TJ, Tstg Thermal Resistance, Junction to Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath Symbol Max Unit RJA 83.3 C/W TL C Sec 260 10 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. Semicon