HGT1S12N60B3S Data Sheet December 2001 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25 oC and 150oC. * 27A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Packaging JEDEC TO-220AB Formerly developmental type TA49171.

HGT1S12N60B3S Data Sheet January 2000 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 27A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4410.2 * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" Packaging JEDEC TO-220AB Formerly developme

HGT1S12N60B3S Data Sheet April 2002 27A, 600V, UFS Series N-Channel IGBTs Features This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 27A, 600V, TC = 25oC * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC TO-220AB (ALTERNATE VERSION) COLLECTOR (FLANGE) Formerly developmental type TA49171. E C G Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60B3 TO-220AB G12N60B3 HGTG12N60B3 T

HGT1S12N60B3S Semiconductor 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description * 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Ordering Information Formerly develo

HGT1S12N60B3S S E M I C O N D U C T O R 27A, 600V, UFS Series N-Channel IGBTs December 1997 Features Description * 27A, 600V, TC = 25oC The HGTP12N60B3, HGT1S12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 600V Switching SOA Capability * Typical Fall Time . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Ordering Information For

HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49171. Ordering Information PART NUMBER PACKAGE BRAND HGTP12N60B3 TO-220AB G12N60B3 HGT1S12N60B3S TO-263AB G12N60B3 NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g., HGT1S12N60B3S9A. Symbol HGTP12N60B3, HGT1S12N60B3S January 2000 File Number 4410.2 Features * 274A, 600V, Tc = 25C * 600V Switching SOA Capab

HGT1S12N60B3S 27A, 600V, UFS Series N-Channel IGBTs Features * 27A, BO00V, Te = 25C + 600V Switching SOA Capability Typical Fall Time .............. * Short Circuit Rating + Low Conduction Loss + Related Literature - TB334 Guidelines for Soldering Surface Mount Components to PC Boards 112ns at Ty = 150C Description The HGTP12N60B3, HGT1S12N60B3 and HGT1812N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipclar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AG and DG motor controls, power sup- plies and drivers for solenoids, relays and contactors. Ordering Information Formerly developmental type TA49171. PART NUMBER PACKAGE BRAND HGTP12N60B3

Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 HGTP12N60B3, HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 27A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. * Related Literature - TB334 "

HGT1S12N60B3S Data Sheet January 2000 File Number 4410.2 27A, 600V, UFS Series N-Channel IGBTs Features The HGTP12N60B3 and HGT1S12N60B3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. * 27A, 600V, TC = 25oC The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. * Related Literature - TB334 "Guidelines for Soldering Surface Mount Components to PC Boards" * 600V Switching SOA Capability * Typical Fall Time. . . . . . . . . . . . . . . . 112ns at TJ = 150oC * Short Circuit Rating * Low Conduction Loss Packaging JEDEC TO-220AB Formerly developmen

T1S3N60A4DS 600 8 2 47 No Yes Power Conversion (SMPS Series) HGT1S3N60A4S 600 8 2 47 No No Power Conversion (SMPS Series) SGW10N60RUF 600 10 2.2 158 Yes No Motor Control; Power Conversion SGW10N60RUFD 600 10 2.2 158 Yes Yes Motor Control; Power Conversion HGT1S12N60B3S 600 12 1.6 62 Yes No Motor Control; Power Conversion HGT1S12N60C3DS 600 12 1.65 100 Yes Yes Motor Control HGT1S12N60C3S 600 12 1.65 100 Yes No Motor Control SGW23N60UF 600 12 2.1 70 No No Motor Control; Power Conversion SGW23N60UFD 600 12 2.1 70 No Yes Motor Control; Power Conversion FGB20N6S2 600 13 2.2 50 No No Power Conversion (SMPS Series) FGB20N6S2D 600 13 2.2 50 No Yes Power Conversion (SMPS Series) HGT1S7N60A4DS 600 14 1.9 45 No Yes Power Conversion (SMPS Series) HGT1S7N60A4S 600 14 1.9 45 No No Power Conversion (SMPS Series) SGW15N60RUF 600 15 2.2 118 Yes No Motor Control; Power Conversion FGB30N6S2 600 20 2 53 No No Power Conversion (SMPS Series) FGB30N6S2D 600 20 2 53 No Yes Power Conversion (SMPS Series) HGT1S20N60C3S 60

HGTD1N120CNS HGTD2N120BNS HGTD2N120CNS TO-262 (I2PAK) HGT1S2N120CN TO-263 (D2PAK) HGT1S3N60C3DS SGW6N60UF SGW6N60UFD SGW5N60RUF SGW5N60RUFD SGW13N60UF SGW13N60UFD HGT1S7N60B3DS HGT1S7N60B3S HGT1S7N60C3DS HGT1S3N60A4DS HGT1S3N60A4S SGW10N60RUF SGW10N60RUFD HGT1S12N60B3S HGT1S12N60C3DS HGT1S12N60C3S SGW23N60UF SGW23N60UFD HGT1S7N60A4DS HGT1S7N60A4S SGW15N60RUF FGB30N6S2 FGB30N6S2D HGT1S20N60C3S SGW20N60RUF HGT1S12N60A4DS 400 600 400 600 1200 * TC=25C unless otherwise specified 3 http://store.iiic.cc/ Products VCE (sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-In Diode 23 35 40 3.2 5.6 7 7 10 10 12 12 17 22 2 1.9 1.8 2.05 2.45 2.05 2.05 2.45 2.45 2.1 2.1 2.45 2.1 18 55 32 365 130 260 260 130 130 280 280 100 190 No No No Yes Yes Yes Yes Yes Yes Yes Yes Yes No No No No Yes No Yes No Yes No Yes No No No Power Conversion (SMPS Series) Power Conversion (SMPS Series) Power Conversion (SMPS Series) Motor Control Motor Control; Power Conversion Motor Control Motor Control Motor Control; Power Conversio

V RUGGED UFS 600V 200ns UFS 600V 275ns UFS IC AT 110oC TO-247 600V 200ns UFS TO-264 HGT1S20N60C3S 1.8V 1500J HGT1S12N60C3S HGT1S12N60C3DS 2.0V 900J HGT1S7N60C3DS 2.0V 600J HGT1S3N60C3DS 2.0V 245J 600V 275ns UFS M A 600V RUGGED UFS HGT1S20N60B3S 2.0V 1050J HGT1S12N60B3S HGT1S12N60B3DS 2.0V 800J HGT1S7N60B3DS 2.0V 350J HGT1S3N60B3DS 2.0V 200J 600V 200ns UFS ITALICS = Future Product Offerings HGTP20N60B3 2.0V 1050J HGTP12N60B3 HGTP12N60B3D 2.0V 800J HGTP7N60B3D 2.0V 350J HGTP3N60B3D 2.0V 200J PART NOMENCLATURE HGTP20N60C3 1.8V 1500J HGTP12N60C3 HGTP12N60C3D 2.0V 900J HGTP7N60C3 HGTP7N60C3D 2.0V 600J HGTP3N60C3D 2.0V 245J 600V 200ns UFS TO-220AB POLARITY N-Channel or P-Channel CONTINUOUS CURRENT Rating at TC = +110oC PACKAGE D: 3 Lead TO-251/TO-252 1S: 3 Lead TO-262/TO-263 P: 3 Lead TO-220 G: 3 Lead TO-247 1Y: 3 Lead TO-264 VOLTAGE BREAKDOWN/10 i.e. (60, 120) LC96585 MAX FALL TIME AT TJ = +150oC A: 100ns E: 1s B: 200ns F: 2s C: 500ns G: 5s D: 750ns 1: First Generation 2: Second Generation 3: Third Ge

HGTD1N120CNS HGTD2N120BNS HGTD2N120CNS TO-262 (I2PAK) HGT1S2N120CN TO-263 (D2PAK) HGT1S3N60C3DS SGW6N60UF SGW6N60UFD SGW5N60RUF SGW5N60RUFD SGW13N60UF SGW13N60UFD HGT1S7N60B3DS HGT1S7N60B3S HGT1S7N60C3DS HGT1S3N60A4DS HGT1S3N60A4S SGW10N60RUF SGW10N60RUFD HGT1S12N60B3S HGT1S12N60C3DS HGT1S12N60C3S SGW23N60UF SGW23N60UFD HGT1S7N60A4DS HGT1S7N60A4S SGW15N60RUF FGB30N6S2 FGB30N6S2D HGT1S20N60C3S SGW20N60RUF HGT1S12N60A4DS 400 600 400 600 1200 * TC=25C unless otherwise specified 3 Products VCE (sat) Typ (V) tf Typ (ns) Short Circuit Rated Built-In Diode 23 35 40 3.2 5.6 7 7 10 10 12 12 17 22 2 1.9 1.8 2.05 2.45 2.05 2.05 2.45 2.45 2.1 2.1 2.45 2.1 18 55 32 365 130 260 260 130 130 280 280 100 190 No No No Yes Yes Yes Yes Yes Yes Yes Yes Yes No No No No Yes No Yes No Yes No Yes No No No Power Conversion (SMPS Series) Power Conversion (SMPS Series) Power Conversion (SMPS Series) Motor Control Motor Control; Power Conversion Motor Control Motor Control Motor Control; Power Conversion Motor Control; Power

l (*) HGTD3N60B3 Intersil (*) HGTP3N60B3S Intersil (*) HGT1S3N60B3S Intersil (*) HGTP7N60B3 Intersil (*) HGT1S7N60B3 Intersil (*) HGTD7N60B3 Intersil (*) HGTD7N60B3S Intersil (*) HGT1S7N60B3S Intersil (*) HGTP12N60B3 Intersil (*) HGT1S12N60B3 Intersil (*) HGT1S12N60B3S Intersil (*) HGTG20N60B3 Intersil (*) HGTP20N60B3 Intersil (*) HGTG30N60B3 Intersil (*) HGTG40N60B3 Fast IGBT DuoPack typ. VCE sat [V] @25C Ic@xC [A] TO220 TO220 TO220SMD IPAK TO220SMD TO-264 DPAK TO220 TO220 TO220SMD TO220SMD TO3P 2.2 2.2 2.2 2.2 2.2 2.0 2.0 2.0 2.0 2.0 2.0 2.0 5A@100C 5A@100C 5A@100C 5A@100C 5A@100C 5A@100C 5A@100C 7A@100C 7A@100C 7A@100C 7A@100C 7A@100C TO220 TO220 TO247 TO247 DPAK TO220 TO220 DPAK TO220FP TO220 TO262 IPAK DPAK TO-220SMD TO220 TO262 IPAK DPAK TO-220SMD TO220 TO262 TO220SMD TO247 TO220 TO247 TO247 1.35 2.3 2.3 2.3 2.3 2.3 2.3 2.3 2.3 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.8 1.6 1.6 1.6 1.8 10A@100C 20A@100C 20A@100C 20A@100C 7A@100C 7A@100C 7A@100C 7A@100C 7A@100C 3A@110C 3A@110C 3A@110C 3A@110C 3

HGTD7N60A4S 2.7V 85ns HGTP7N60A4 2.7V 85ns HGTD7N60B3S 2.1V 175ns HGTP7N60B3 2.1V 175ns HGTD7N60C3S 2.0V 275ns HGTP7N60C3 2.0V 275ns 12A 20A HGTG7N60A4 2.7V 85ns HGT1S7N60B3S 2.1V 175ns HGTP12N60A4 2.7V 95ns HGT1S12N60A4S 2.7V 95ns HGTP12N60B3 2.1V 175ns HGT1S12N60B3S 2.1V 175ns HGTP12N60C3 2.0V 275ns HGT1S12N60C3S 2.0V 275ns HGTG12N60A4 2.7V 95ns HGTP20N60A4 2.7V 73ns HGTG20N60A4 2.7V 73ns HGTP20N60B3 2.0V 200ns HGTG20N60B3 2.0V 200ns HGTP20N60C3 1.8V 210ns HGT1S20N60C3S 1.8V 210ns HGTG20N60C3 1.8V 210ns 30A HGTG30N60A4 2.6V 70ns HGTG30N60B3 1.9V 150ns HGTG30N60C3 1.8V 275ns 40A HGTG40N60A4 2.7V 95ns HGTG40N60B3 2.0V 200ns HGTG40N60C3 1.8V 200ns NOTE: 1. VCE(SAT) Maximum is measured at TJ = 25oC, ICE = IC110 or Rated, and VGE = 15V. tF Maximum is measured at TJ = 150oC (125oC for "A" speed parts), ICE = IC110 or Rated, and VCE(PK) = 480V (390V for "a" speed parts). 1 1-888-INTERSIL or 321-724-7143 | Intersil and Design is a trademark of Intersil Corporation. | Copyright (c) Intersil Corporation