HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. TO-220 Absolute Maximum Ratings (TA=25C) * Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 C Junction Temperature ................................................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (TC=25C) .................................................................................................................... 65 W Total Power Dissipation (TA=25C) ...................................................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................

HTIP41C NPN EPITAXIAL PLANAR TRANSISTOR Description The HTIP41C is designed for use in general purpose amplifier and switching applications. Absolute Maximum Ratings (Ta=25C) TO-220 * Maximum Temperatures Storage Temperature ............................................................................................ -55 ~ +150 C Junction Temperature .................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) ..................................................................................... 65 W Total Power Dissipation (Ta=25C) ....................................................................................... 2 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage..................................................................................... 100 V BVCEO Collector to Emitter Voltage................................................................................