0mA 10V >350V <0.4V 50mA 5mA >30 50mA 10V VCEO VCEX VEBO iT COBO eJC ! _ >200V | 210V >5V 15MHz <10pF < 15C/W >250V 260V >5V 15MHz <10pF < 1SC/W >300V 300V >5V 15MHz <10pF < 15C/W >350V | 350V >5V 1SMHz <10pF < 15C/W | _ | Typical Device Types: JAN2N5415, JAN2N5416, SDT1A10 hpE ranges available atIc = 50mA, VcE = 5V, 20-80, 30-120 *The respective NPN complement is chip number 100. C-84 Aolitron PRODUCT CATALOG i Devices. Inc. HIGH VOLTAGE, FAST SWITCHING ChIP TYPE 200 TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO 0 COLLECTOR EMITTER SATURATION VOLTAGE Voce =-10V u = oO Ic Ig N Ey x 4 RD 4 Y AD VoE(sat) SATURATION VOLTAGE V I 2 ~ -1, - Io COLLECTOR CURRENT mA Ig COLLECTOR CURRENT mA TYPICAL BASE EMITTER VOLTAGE 100 TYPICAL GAIN BANDWITH PRODUCT - 100 < ] _ 8 Zz Ww e > = 1 oO = 0 S + e Oo 4-4 a a Oo | 1.0 0 -2 -4 --.6 -.8 -1.0 =1. = = VBE(sat) SATURATION VOLTAGE V Io - COLLECTOR CURRENT mA 1 MAXIMUM OPERATING CONDITIONS < | be _ z Ww a a 5 3 xc e Oo tu : a +01 Qo NOTE: 1 PERFORMANCE CURVES Oo REPRE
JAN2N5416 MM2263 2$C412 28C436 TIP36C D60T307510 DGOT405010 D62T259010 D62T357510 fab 8.0MSA 8.0M5A 10.0MA 1OMEA 10M 10M5 11M 12M8 15MSA 20.0M8A 20M 20M8A 20M 5 20M 20M 20M8 25M8 28M 28M 36.0M5A 40M 40M5 5OMSA 75M 75M 100MSA 400Mt 400Mt 1.0G5 3.0MSA 3.0MSA 7.0M8A 7.0MAS 7.0M8A 7.0MS8A 1 RISE TIME | TIME tr td 1.0u@ 1.0ud t 1000nd 10u |150n 1.0u 40u |100n 1.0ud 1.0u 1.0ugt 1000n 300n 1.0u@ 1.0ud 1.0u 1.0u 1.0u 1.0u 50n 1000n = |200n 1.0ud +.0u 1.0u 1.0ug 1.0ud 1.0u 1000n 1000n 1.0ud 11ugt 1 tugt .tlu 1.1u .au 1.1u Tu lu Tu 1.iu .lu HI TIME ts u 3.5u -5u 2.5u Bu 800n 2.0u 2.0u DELAY| STORE| FALL TIME tt 1.2u 500n 1.0u 7.0u 1.0u 700n 1.0u 1.0u 1.0u 700n 6.0ud 6.0ud 700n 7 700n 700n -50u 1.0u 700n 1.2u 3.0ugd 5Ou 500n 10ud 10ud 1.0u 1.0u 1.0u 1.5uD 1.2ud 800nSt 800nSt 500m 00n 500m 500m R IN FREE AIR @ 25C 10 Z 70 Z 200m 87 DS 40 @ 1.4 40 60 @ 85 D 750m 75 Ds 75 Os $ 80 1 50 Z 60 250 50 @ 71 Ds 100 S$ 600m 115 Ds 250 80 $ 5.0 10 IST Vcb 0 40D 25 D 0G 0g 0g 5.0 D 0 le 10 A# 10 A# 95 1.0 1.0 3.0% | 40
200! 4. +205 10.05 150 JANTX2N5415 =: PPC, Inc. TO-5 STD! 485 | 238191 10 1 =| 200,200 4 0.5 | 0.05 150 | JANTXV2N5415 - PPC, Inc. TO-5 STD_485 23820 10 1 200/200/ 4 | O05 | 0.05 150 | 2N5416 PPG, Inc. TO-5 STD: 23823. 10 | 1 =: 350 300! 6 0.5 | 0.05 120 JAN2N5416 PPC, Inc. . TO-5 STD_485 23824 10 | 1 | 350; 300! 6 O05 |0.05., 120 JANS2N5416 PPC, Inc. TO-5 -STD 485 23827; 10. 1 | 350/300 6 0.5 10.05. 120 JANS2N5416S PPC, Inc. TO-5 STD! 485 .23828| 10 1 | 350 300, 6 05 0.05 120 JANTX2N5416 PPC, inc. - TO-5 STD: 485 23825! 10 1 ' 350 300/ 6 : O85 |0.05 120 JANTXV2N5416 PPC, Inc. | TO-5 STD _485 23826: 10. 1 350 300/ 6 | O85 |0.05 120 | 2N5323 PPC, Inc. TO-5 -STD 123804: 10 2 #75150! 5, 12 0.5 250 2N5322 PPC, Inc. TO-5 STD 23803 10 =62 100' 75: 7 | #+O5 0.5 | 130 ' 2N5783 PPC, Inc. TO-5 |STD! _23863' 10 35 45 40 35) 1 16. 100 | 2N5782 PPC, inc. TO-5 STD 123862, 10 235 65 50 55 O75 |12~ mie 2N5781 PPC, Inc. _ TO-5 STD 23861. (10 | 35 80 ' 65 5 | O5 4 100 2N6190 PPC, Inc. | TO-5 STD 23896 10 ' 5 : 80
0mA 5mA >30 50mA 10V >350V <0.4V 50mA 5mA >30 50mA 10V VCEO VCEX VepO ff ~ COBO | tC >200V 210V >5V 15MHz <10pF <15C/W >250V 260V >5V 1SMHz <10pF <15C/W >300V 300V >5V | 15MHz <10pF <15C/W >350V 350V >5V 1SMHz <10pF <15C/W Typical Device Types: JAN2N5415, JAN2N5416, SDT1A10 hpE ranges available atIc = 50mA, VcE = SV, 20-80, 30-120 **The respective NPN complement is chip number 100. C-84 Aplitron _ PRODUCT CATALOG Devices. Inc. HIGH VOLTAGE, FAST SWITCHING GHIP TYPE 200 TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO : _ COLLECTOR EMITTER SATURATION VOLTAGE =-10V : : 10 Cod Nee VCE(sat) ~ SATURATION VOLTAGE V 4 - -1. Ig COLLECTOR CURRENT ma ic COLLECTOR CURRENT mA TYPICAL BASE EMITTER VOLTAGE TYPICAL GAIN BANOWITH PRODUCT io COLLECTOR CURRENT mA ft MH, 1. -1, Ic ~ COLLECTOR CURRENT ma 0 -2 -4 +6 --8 -1. VBE(sat) - SATURATION VOLTAGE V 1 MAXIMUM OPERATING CONDITIONS < | 2 -. c oO ' ac o g z -.01 NOTE: 1 PERFORMANCE CURVES o REPRESENT LOW TO MIDDLE CEO VOLTAGE - RANGE OF THIS PRODUCT - Vog COLLECTOR E
50mA 10V >350V <0.4V 50mA 5mA >30 50mA 10V VCEO VCEX VEBO fT COBO eJC > 200V 210V >5V 15MHz <10pF <15C/W > 250V 260V >5V 15MHz <10pF <15C/W >300V 300V >5V 15MHz <10pF <15C/W >350V 350V >5V 15MHz JAN2N5416 hf ranges available at Ic = 50mA, VcgE = 5V, 20-80, 30-120 **The respective NPN complement is chip number 100. 836860? snl TTRON DEVICES INC 95D 02876 DB Tr37-/5 SOLTTRON DEVICES INC 45 DE Pasnaco2 OO00267b O Aelitron PRODUCT CATALOG Devices, Inc. HIGH VOLTAGE, FAST SWITCHING ChIP TYPE 200 TYPICAL STATIC FORWARD CURRENT TRANSFER RATIO 40 COLLECTOR EMITTER SATURATION VOLTAGE =-i0V B =10 VcE(sat) SATURATION VOLTAGE V 4 AD = -1, - lb COLLECTOR CURRENT mA I COLLECTOR CURRENT mA TYPICAL BASE EMITTER VOLTAGE TYPICAL GAIN BANDWITH PRODUCT 7a Io COLLECTOR CURRENT mA ff MHz 0 -~.2 -4 -.6 -.8 -1.0 , 1 - VBE(sat) SATURATION VOLTAGE V I COLLECTOR CURRENT A MAXIMUM OPERATING CONDITIONS S, TONY > N 10s < g Lo i | | 3 | ox | 8 a -.01 NOTE: 1 PERFORMA