NJVMJD112T4G (NPN), MJD117, NJVMJD117T4G (PNP) Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. http://onsemi.com SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS, 20 WATTS Features Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Pb-Free Packages are Available* DPAK CASE 369C DPAK-3 CASE 369D MARKING DIAGRAMS AYWW J11xG DPAK A Y WW x G YWW J11xG DPAK-3 = Assembly Location = Year = Work Week = 2 or 7 = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data s

On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 Mhz) MJD117, NJVMJD117T4G MJD112, NJVMJD112G, NJVMJD112T4G Cob pF - - 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 3 MHz 200 100 MJD112 (NPN), MJD117 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 8k D1 60 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf 10 ns DUTY CYCLE = 1% tf 1 0.8 tr 0.6 0.4 +4V 25 ms 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.2 0.1 0.03 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 2. Switching Times D = 0.5 0.3 0.1 0.07 0.05 td @ VBE(off) = 0 V PNP NPN Figure 1.

On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 Mhz) MJD117, NJVMJD117T4G MJD112, NJVMJD112G, NJVMJD112T4G Cob pF - - 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 3 MHz 200 100 MJD112 (NPN), MJD117 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 8k D1 60 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf 10 ns DUTY CYCLE = 1% tf 1 0.8 tr 0.6 0.4 +4V 25 ms 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.2 0.1 0.03 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 2. Switching Times D = 0.5 0.3 0.1 0.07 0.05 td @ VBE(off) = 0 V PNP NPN Figure 1.

ase-Emitter On Voltage (IC = 2 Adc, VCE = 3 Vdc) VBE(on) - Vdc Vdc Vdc DYNAMIC CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz) fT Output Capacitance (VCB = 10 Vdc, IE = 0, f = 0.1 Mhz) MJD117, NJVMJD117T4G MJD112, NJVMJD112T4G Cob pF - - 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 3 MHz 200 100 MJD112 (NPN), MJD117 (PNP) RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA 8k D1 60 FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 tr, tf 10 ns DUTY CYCLE = 1% tf 1 0.8 tr 0.6 0.4 +4V 25 ms 0.2 0.04 0.06 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES. 0.1 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.2 0.2 0.1 0.03 0.4 0.6 0.2 1 IC, COLLECTOR CURRENT (AMP) 2 4 Figure 2. Switching Times D = 0.5 0.3 0.1 0.07 0.05 td @ VBE(off) = 0 V PNP NPN Figure 1.