PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 - 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing 35 Efficiency 25 IM3 -38 20 -43 15 -48 10 ACPR -53 5 34 36 38 40 42 * Thermally-enhanced packages * Broadband internal matching * Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% * Typical CW performance, 1880 MHz, 28 V - Output power at P-1dB = 120 W - Gain 15.5 dB - Efficiency = 52% * Integrated ESD protection: Human Body Model, Class 2 (min

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 - 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS (R) FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures excellent device lifetime and reliability. PTFA181001E Package H-30248-2 PTFA181001F Package H-31248-2 Features 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 * Thermally-enhanced packages * Broadband internal matching * Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% * Typical CW performance, 1880 MHz, 28 V - Output power at P-1dB = 120 W - Gain 15.5 dB - Efficiency = 52% * Integrated ESD protection: Human Body Model, Class 2 (minimum) * Excellent thermal stability, low HCI drift * Capable of handling 10:1 VSWR @ 28 V, 100 W (CW) output p

PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 - 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the DCS band. Features include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA181001E Package H-36248-2 PTFA181001F Package H-37248-2 Features 2-Carrier WCDMA Drive-up VDD = 28 V, IDQ = 750 mA, = 1880 MHz, 3GPP WCDMA signal, P/A R = 8 dB, 10 MHz carrier spacing -23 35 * Thermally-enhanced packages * Broadband internal matching * Typical EDGE performance at 1879.8 MHz, 28 V - Average output power = 45 W - Linear Gain = 16.5 dB - Efficiency = 36% - EVM RMS = 1.8% * Typical CW performance, 1880 MHz, 28 V - Output power at P-1dB = 120 W - Gain 15.5 dB - Efficiency = 52% * Integrated

8-2 H-34288-2 H-33288-6 H-34288-6 1450 MHz to 1500 MHz PTFA142401EL 1450-1500 PTFA142401FL 1450-1500 I/O I/O 240 240 16.5 16.5 27.5 27.5 50 50 DVB-T DVB-T 30 30 0.28 0.28 H-33288-2 H-34288-2 1800 MHz to 2000 MHz PTFA180701E 1805-1880 PTFA180701F 1805-1880 PTFA181001E 1805-1880 1805-1880 PTFA181001F PTFB182503EL 1805-1880 PTFB182503FL 1805-1880 PTFB183404F 1805-1880 PTFA190451E 1930-1990 PTFA190451F 1930-1990 PTFA191001E 1930-1990 PTFA191001F 1930-1990 PTFB191501E 1930-1990 PTFB191501F 1930-1990 I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 72 72 120 120 240 240 340 60 60 130 130 150 150 16.5 16.5 16.5 16.5 19 19 17 17.5 17.5 17 17 18 18 40.5 40.5 36 36 28 28 25.5 28 28 28 28 30 30 25 25 45 45 50 50 80 11 11 25 25 35 35 EDGE EDGE EDGE EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 28 28 28 28 30 30 30 28 28 30 30 30 30 0.87 0.87 0.43 0.43 0.26 0.26 0.20 0.83 0.83 0.42 0.42 0.29 0.29 H-36265-2 H-37265-2 H-36248-2 H-37248-2 H-33288-6 H-34288-6 H-37275-8 H-36265-2 H-37265-2 H-36248-

6.5 16.5 16.5 27.5 27.5 29 27.5 27.5 12.5 12.5 50 50 50 DAB DAB DAB DVB-T DVB-T 28 28 32 30 30 1.00 1.00 0.40 0.28 0.28 H-30265-2 H-31265-2 H-30260-2 H-33288-2 H-34288-2 1800 MHz to 2000 MHz PTF180101S 1805-2170 PTFA180701E 1805-1880 PTFA180701F 1805-1880 PTFA181001E 1805-1880 PTFA181001F 1805-1880 PTFB182503EL 1805-1880 PTFB182503FL 1805-1880 PTFA190451E 1930-1990 PTFA190451F 1930-1990 PTFA191001E 1930-1990 PTFA191001F 1930-1990 I I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 15 72 72 120 120 240 240 60 60 130 130 19 16.5 16.5 16.5 16.5 19 19 17.5 17.5 17 17 28 40.5 40.5 36 36 28 28 28 28 28 28 4 25 25 45 45 50 50 11 11 25 25 EDGE EDGE EDGE EDGE EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 28 28 28 28 28 30 30 28 28 30 30 3.00 0.87 0.87 0.43 0.43 0.26 0.26 0.83 0.83 0.42 0.42 H-32259-2 H-36265-2 H-37265-2 H-36248-2 H-37248-2 H-33288-6 H-34288-6 H-36265-2 H-37265-2 H-36248-2 H-37248-2 LDMOS RF Power Transistors Product Gain Typ [dB] Eff Typ [%] POUT Avg [W] Test Signal Supply JC Voltage Typ [V] [C/W] Opera

2 H-34288-2 H-33288-6 H-34288-4/2 1450 MHz to 1500 MHz PTFA142401EL 1450-1500 PTFA142401FL 1450-1500 I/O I/O 240 240 16.5 16.5 27.5 27.5 50 50 DVB-T DVB-T 30 30 0.28 0.28 H-33288-2 H-34288-2 1800 MHz to 2000 MHz PTFA180701E 1805-1880 PTFA180701F 1805-1880 PTFA181001E 1805-1880 PTFA181001F 1805-1880 PTFB182503EL 1805-1880 PTFB182503FL 1805-1880 PTFB183404E 1805-1880 PTFB183404F 1805-1880 PTFA190451E 1930-1990 PTFA190451F 1930-1990 PTFA191001E 1930-1990 PTFA191001F 1930-1990 I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O I/O 72 72 120 120 240 240 340 340 60 60 130 130 16.5 16.5 16.5 16.5 19 19 17 17 17.5 17.5 17 17 40.5 40.5 36 36 28 28 25.5 25.5 28 28 28 28 25 25 45 45 50 50 80 80 11 11 25 25 EDGE EDGE EDGE EDGE WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA WCDMA 28 28 28 28 30 30 30 30 28 28 30 30 0.87 0.87 0.43 0.43 0.26 0.26 0.20 0.20 0.83 0.83 0.42 0.42 H-36265-2 H-37265-2 H-36248-2 H-37248-2 H-33288-6 H-34288-4/2 H-36275-8 H-37275-6/2 H-36265-2 H-37265-2 H-36248-2 H-37248-2 LDMOS RF Power Transistor

FA190451E 1930-1990 I/O 60 17.5 28 11 WCDMA 28 0.83 H-36265-2 PTFA190451F 1930-1990 I/O 60 17.5 28 11 WCDMA 28 0.83 H-37265-2 PTFA180701E 1805-1880 I/O 72 16.5 40.5 25 EDGE 28 0.87 H-36265-2 PTFA180701F 1805-1880 I/O 72 16.5 40.5 25 EDGE 28 0.87 H-37265-2 PTFA181001E 1805-1880 I/O 120 16.5 36 45 EDGE 28 0.43 H-36248-2 PTFA181001F 1805-1880 I/O 120 16.5 36 45 EDGE 28 0.43 H-37248-2 PTFA191001E 1930-1990 I/O 130 17 28 25 WCDMA 30 0.42 H-36248-2 PTFA191001F 1930-1990 I/O 130 17 28 25 WCDMA 30 0.42 H-37248-2 PTFB191501E 1930-1990 I/O 150 18 30 35 WCDMA 30 0.29 H-36248-2 PTFB191501F 1930-1990 I/O 150 18 30 35 WCDMA 30 0.29 H-37248-2 PTFA192001E 1930-1990 I/O 220 15.9 27 50 WCDMA 30 0.28 H-36260-2 PTFA192001F 1930-1990 I/O 220 15.9 27 50 WCDMA 30 0.28 H-37260-2 PTFA192401E 1930-1990 I/O 240 16 27 50 WCDMA 30 0.23 H-36260-2 PTFA192401F 1930-1990 I/O 240 16 27 50 WCDMA 30 0.23 H-37260-2 PTFB182503EL 1805-1880 I/O 240 19 28 50 WCDMA 30 0.26 H-33288-6 PTFB182503FL 1805-1880 I/O 240 19 28 50 WCDMA 30 0.26 H