K-841040NP or LLBD00PKV023 RECTIFIER DIODE 1N4005 or NDQZ001N4005 DIODE RECTIFIER 1N4005 or NDLZ01N4005S RECTIFIER DIODE 1N4005 NDWZ001N4005 D1553 PCB JUMPER D0.6-P5.0 JW5.0T D1563 SCHOTTKY BARRIER DIODE SB140 or NDQZ000SB140 DIODE SCHOTTKY SB140 or NDLZ00SB140S SCHOTTKY BARRIER DIODE SB140 NDWZ000SB140 SWITCHING DIODE 1SS133(T-77) or QDTZ001SS133 DIODE SWITCHING 1N4148-F0021 or NDTZ01N4148F SWITCHING DIODE 1N4148M NDTZ01N4148M L1505 CHOKE COIL 47H or LLBD00PKV022 CHOKE COIL 47H-K LLBD00PKT001 L1506 INDUCTOR 100H-K-5FT LLARKBSTU101 L1507 INDUCTOR(100H K) LAP02TA101K LLAXKATTU101 L1508 INDUCTOR 18H-K-26T LLAXKATTU180 L1509 CHOKE COIL 22H-K or LLBD00PKV021 CHOKE COIL 22H-K LLBD00PKT002 L1510 INDUCTOR(100H K) LAP02TA101K LLAXKATTU101 L1511 PCB JUMPER D0.6-P5.0 JW5.0T L1512 INDUCTOR(100H K) LAP02TA101K LLAXKATTU101 L1513 RADIAL TYPE CHOKE COIL CW68470K-841040NP or LLBD00PKV023 SWITCHING DIODE 1SS133(T-77) or QDTZ001SS133 CHOKE COIL 47H or LLBD00PKV022 DIODE SWITCHING 1N4148-F0021 or NDTZ01N4148F CHOK

SB140S SCHOTTKY DIE SPECIFICATION General Description: 40 V 1 A (5Standard Low) VF ELECTRICAL CHARACTERISTICS TYPE: SB140S (5Single Dual) Anode SYM Spec. Limit UNIT DC Blocking Voltage @ IR=1mA VRRM 40 Volt Average Rectified Forward Current IFAV 1 Amp VF MAX 0.520 Volt IR MAX 0.100 mA Nonrepetitive Peak Surge Current IFSM 32 Amp Operating Junction Temperature Tj 125 TSTG -50 to +150 Maximum Instantaneous Forward Voltage @ 1 Ampere, Ta=25 Reverse current @ VR= 43 Volt, Ta=25 MAXIMUM RATINGS Storage Temperature Specifications apply to die only. Actual performance may degrade when assembled. We do not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING DIM A B A C B ITEM Die Size Top Metal Pad Size Thickness (Min) Die Thickness (Max) Thickness (Min) Wafer Thickness (Max) m 762 678 280 300 190 210 Mil 30.00 26.69 11.02 11.81 7.48 8.27 PS: Top-side Metal SiO2 Passivation C P+ Guard Ring Back-side Metal (1)Cutting

B5952 1SMB5953 1SMB5954 1SMB5955 1SMB5956 1N5948B 1N5949B 1N5950B 1N5951B 1N5952B 1N5953B 1N5954B 1N5955B 1N5956B SCHOTTKY BARRIER RECTIFIER LEADED DEVICES PRV(V) TYPE NO 20 30 40 50 60 80 100 PACKAGE 1.0 1S2 1S3 1S4 1S5 1S6 1S8 1S10 R-1 1.0 SB120S SB130S SB140S SB150S SB160S SB180S SB1100S A-405 1.0 1N5817 1N5818 1N5819 1.0 SB120 SB130 SB140 SB150 SB160 SB180 SB1100 DO-41 2.0 SB220 SB230 SB240 SB250 SB260 SB280 SB2100 DO-15 3.0 1N5820 1N5821 1N5822 3.0 SB320 SB330 SB340 SB350 SB360 SB380 SB3100 DO-201AD 5.0 SB520 SB530 SB540 SB550 SB560 SB580 SB5100 DO-201AD 8.0 SB820F SB830F SB840F SB850F SB860F SB880F SB8100F ITO-220AC 8.0 SB820 SB830 SB840 SB850 SB860 SB880 SB8100 TO-220AC 10.0 SB1020F SB1030F SB1040F SB1050F SB1060F SB1080F SB10100F ITO-220AC 10.0 SB1020 SB1030 SB1040 SB1050 SB1060 SB1080 SB10100 TO-220AC 16.0 SB1620F SB1630F SB1640F SB1650F SB1660F SB1680F SB16100F ITO-220AB 16.0 SB1620 SB1630 SB1640 SB1650 SB1660 SB1680 SB16100 TO-220AB Io(A) DO-41 DO-201AD SURFACE MOUNT DEVICES PRV(V) TYP

SB140S SCHOTTKY DIE SPECIFICATION Revision 3 9/3/2000 General Description Std Vf 40V 1A Single Anode ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Average Rectified Forward Current Ir = 0.1 mA Maximum Instantaneous Forward Voltage @ 1 Amperes, 25 0 0 @ @ 2 Amperes, 25 3 Amperes, 25 0 SYM Spec. Limit Die Sort VRRM IFAV 40 1 42.5 Volt Amp VFMAX 0.49 0.48 Volt VFMAX VFMAX 0.7 0.75 0.69 0.74 Volt Volt IRMAX 0.1 UNIT Maximum Instantaneous Reverse Voltage VR = 40 Volt, Tc = 250 Maximum Junction Capacitance at 0V, 1MHz mA 0.09 Cj MAX pF MAXIMUM RATINGS Nonrepetitive Peak Surge Curren IFSM Operating Juntion Temperatur TJ Storage Temperature TSTG DIM 40 AMP 0 C -65 to +125 0 -65 to +12 um mil Ax Ay Die Size 880 880 34.6 34.6 Bx By Top Metal pad size 750 750 29.5 29.5 Cx Cy Passivation Seal 843 33.2 Thickness (Min) 843 228 33.2 9.0 Thickness (Max) 254 10.0 D ITEM C SCRIBE INSTRUCTION: Die performance is assured providing the die separation process leaves the Passivation Seal free of any visible damage. T

0.85 1.0 0.5 10 R-1 1S100 1.0 100 35 0.85 1.0 0.5 10 R-1 1N5817S 1.0 20 25 0.45 1.0 1.0 10 A-405 1N5818S 1.0 30 25 0.55 1.0 1.0 10 A-405 1N5819S 1.0 40 25 0.60 1.0 1.0 10 A-405 SB120S 1.0 20 40 0.50 1.0 0.5 10 A-405 SB130S 1.0 30 40 0.50 1.0 0.5 10 A-405 SB140S 1.0 40 40 0.50 1.0 0.5 10 A-405 SB150B 1.0 50 40 0.70 1.0 0.5 10 A-405 SB160S 1.0 60 40 0.70 1.0 0.5 10 A-405 SB180S 1.0 80 40 0.75 1.0 0.5 10 A-405 SB1A0S 1.0 100 40 0.83 1.0 0.5 10 A-405 SR120S 1.0 20 40 0.55 1.0 0.5 10 A-405 SR130S 1.0 30 40 0.55 1.0 0.5 10 A-405 SR140S 1.0 40 40 0.55 1.0 0.5 10 A-405 SR150S 1.0 50 40 0.70 1.0 0.5 10 A-405 SR160S 1.0 60 40 0.70 1.0 0.5 10 A-405 A-405 B560C Leaded Rectifiers SR180S 1.0 80 40 0.75 1.0 0.5 10 SR1A0S 1.0 100 40 0.83 1.0 0.5 10 A-405 1N5817 1.0 20 25 0.45 1.0 1.0 10 DO-41 1N5818 1.0 30 25 0.55 1.0 1.0 10 DO-41 1N5819 1.0 40 25 0.60 1.0 1.0 10 DO-41 SB120 1.0 20 40 0.50 1.0 0.5 10 DO-41 Note: 1) T A=125 SMC / DO-214AB 38. R-1 A-405 DO-41 http://www.galaxycn.com Schottky barrier rectifiers I(

millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 J ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. A-405 + (254) 1.0 2k O21 Aor (27) O80 12.0) (4) {23} SB120S | SB130S | SB140S | SB150S | SB168S | $B180S |SB1100S} UNITS Maximum Recurrent Peak Reverse Voltage 20 30 40 50 60 80 100 V Maximum RMS Voltage 14 21 26 35 42 56 80 V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 V Maximum Forward Voltage at 1.0A 0.50 0.70 0.85 V Maximum Average Forward Rectified 1.0 A Current .375 Lead Length at T,=75 J Peak Forward Surge Current lrw (surge) 30 A 8.3msec. single half sine-wave superimposed on rated load (JEDEC method) Maximum Fu Load Reverse Current, Full 30 mA Cycle Average at Ta=75 J Maximum Reverse Current T,=25 J 0.5 mA at Rated Reverse Voltage Ta=100 J 10.0 Typical Junction capacitance (Note 1) 110 pF Typical Thermal Resistance &KJA (Note 2) 80 J/W Operating and Storage Temperature Range -50 TO +125 J NOTES: 1. M

SB140S Single Anode General Description: 40 V 1 A Standard VF ELECTRICAL CHARACTERISTICS DC Blocking Voltage: Ir=1mA(for wafer form) Ir=0.5mA (for dice form) Average Rectified Forward Current Maximum Instantaneous Forward Voltage @ 1 Ampere, Ta=25C Maximum Instantaneous Reverse Voltage @ VR= 40 Volt, Ta=25C Maximum Junction Capacitance @ 0V, 1MHZ MAXIMUM RATINGS Nonrepetitive Peak Surge Current Operating Junction Temperature Storage Temperature SYM VRRM Spec. Limit 40 Die Sort UNIT 42.5 Volt IFAV 1 VF MAX 0.55 0.49 Volt IR MAX 0.5 0.09 mA Cj MAX 110 pF IFSM Tj TSTG 40 -65 to +150 -65 to +150 Amp C C Amp Specifications apply to die only. Actual performance may degrade when assembled. MEMT does not guarantee device performance after assembly. Data sheet information is subjected to change without notice. DICE OUTLINE DRAWING A C ITEM Die Size Top Metal Pad Size Passivation Seal Thickness (Min) Thickness (Max) um2 914 814 834 254 305 Mil2 35.98 32.00 32.80 10.00 12.00 PS: B Top-side Metal D DIM A B C

denotes cathode Mounting Position: Any Weight: 0.008 ounce, 0.22 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 J ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. SB120S SB130S SB140S SB150S SB168S SB180S SB1100S UNITS Maximum Recurrent Peak Reverse Voltage 20 30 40 50 60 80 100 V Maximum RMS Voltage 14 21 26 35 42 56 80 V Maximum DC Blocking Voltage 20 30 40 50 60 80 100 V Maximum Forward Voltage at 1.0A 0.50 0.70 0.85 V Maximum Average Forward Rectified 1.0 A Current .375" Lead Length at TA=75 J Peak Forward Surge Current IFM (surge) 30 A 8.3msec. single half sine-wave superimposed on rated load (JEDEC method) Maximum Full Load Reverse Current, Full 30 mA Cycle Average at TA=75 J 0.5 mA Maximum Reverse Current TA=25 J 10.0 at Rated Reverse Voltage TA=100 J Typical Junction capacitance (Note 1) 110 PF Typical Thermal Resistance KJA (Note 2) 80 J /W Operating and Storage Temperature Range -50 TO +125 J NOTES: 1. Measur