2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM 2N1893X 2N2060 2N2060A 2N2060ADCSM 2N2060DCSM 2N2102 2N2102L 2N2192 2N2192A 2N2192AL 2N2192L 2N2194 2N2194A 2N2197 2N2197-TO39 2N2218 PRODUCT BCY78CSM BCY78DCSM BCY79 BCY79A BCY79B Status Polarity Package NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) PNP TO5 (TO205AA) PNP TO39 (TO205AD) PNP LCC1 PNP LCC2 (MO-041BB) NPN TO61 (TO210AC) NPN TO61 (TO210AC) TO5 (TO205AA) NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO5Thermoslug NPN TO53 NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN LCC1 NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN LCC2 (MO-041BB) NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO5 (TO205AA)
JA [175 20 10 |90 20 7120 10M 0.5 10M 300M | T 2N990 GiP RFC 67M LA 75 20 20 ;R 40 1.QM 40 E 44m | T 2N991 GiP RFC 67M A 75 20 20 |R 40 L.0M 40 E 44M 1, T 1-112 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N1613
4 | HSS} 150M | A] loo} 15 15 | S| 50{ 200] 10M | 0.125] om 320M | 7 2n780 | $| N{ 2N2220| 8-108 | AFA] 1.0W | C] 175] 45 45 35] 140] 500* 1.0{ 10M 60M | T 1-110 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N1613
5 2N1155 4-65 2N1156 4-65 2N1276 * 2N1277 * 2N1278 * 2N1279 * 2N1420 4-68 2N1507 4-68 2N1566 4-70 2N1586 * 2N1587 * 2N1588 . 2... * anissg 2 www. 2N1590 * 2N1591 * 2N1592 . 2N1593 * 2N1594 * 2N1595 POWER 2N1596 POWER 2N1597 POWER 2N1598 POWER 2N1599 POWER 2N1613 4-71 2N1671. 4-73 2N1671A 4-73 2N1671B 4-73 2N1711 4-75 2N1714 POWER 2N1715 POWER 2N1716 POWER 2N1717 POWER 2N7718 POWER 2N1719 POWER 2N1720 POWER *Not shown in this data book but still available from Texas Instruments. POWER- Refer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404). TYPE NO. 2N1721 2N1722 2N1722A 2N1723 2N1724 2N1724A 2N 1725 2N1889 2N1890 2N 1893 2N1936 2N 1937 2N1973 2N1974 2N1975 2N2060 2N2102 . 2N2102A 2N2150 2N2151 2N2160 2N2192 2N2192A 2N2193 2N2193A 2N2194 2N2194A 2N2217 . 2N2218 2N2218A 2N2219 2N2219A 2N2220 . . 2N2221 2N2221A 2N2222 2N2222A 2N2223 2N2223A 2N2243 2N2243A 2N2270 2N2303 2N2386 2N2386A 2N2387 2N2388 2N2389 2N2390 2N2393 SEC.-PAGE POWER POWER POWER POWER POWER POWER POW
1729 G|P MSS 150M |A 85 25 15 |X 30 100M 0.35 200M 2N1730 GIN MSS 150M |A 85 20 15 |X 30 100M | 0.35 200M 2N1731 G|P AFA 150M jA 85 30 30 |X 40 10M 5.0M |B 1-121 Switching and General Purpose Transistors an7 18Asiticon) Veen = 50 rv 2N956 f; = 300 MHz Typ 2N1613 QNI711 (JAN 2N1613 AND 2N1711 Available) CASE 22 CASE 31 (TO-18) (TO-5) 2N718A 2N1613 2N956 2N1711 Collector connected to case NPN silicon annular Star transistors for high-speed switching and DC to UHF amplifier applications. MAXIMUM RATINGS . 2N718A 2N1613 : Rating Symbol N96 ONITLI Unit Collector-Emitter Voltage VoER 50 Vde Collector-Base Voltage Yop 15 Vde Emitter-Base Voltage Ves 7.0 Vde Total Device Dissipation @ Ta = 25C Pp 500 800 mW Derate above 25C 2.86 4.57 mWw/C Total Device Dissipation @ To = 25C Py 1.8 3.0 Watts Derate above 25C 10.3 17.1 mW/C Operating and Storage Junction Temperature Range Ty Tete -65 to +200 C 8-30 Switching and General Purpose Transistors 2N718A, 2N956, 2N1613
2N1613, 2N2102 HARRIS SEMICOND SECTOR 27E D MM 4302271 0019775 S MMHAS - E33-C5 Medium-Power Silicon N-P-N Planar Transistors TERMINAL DESIGNATIONS For Small-Signal Applications In Industrial and Commercial Equipment 2N2102 Features: @ Gain bandwidth product (fr) = 120 MHz (typ.); useful in applications from de to 20 MHz (CASE) 8 High breakdown voltage: Viamceo = 120 V min. at lo = 0.1 mA = Low saturation voltages: sres-278%2 Vce(sat) = 0.5 V max. at lo = 150 MA Vae(Sat) = 1.1 V max. at le = 150 mA . = Beta (hre) controlled over 5 decades of Ic JEDEC TO-205AD The 2N1613 and 2N2102 are silicon n-p-n planar transistors intended for a wide variety of small-signal and medium-power applications in military and industrial equipment. They feature exceptionally low noise, low leakage, high switching speed, and high oulsed beta. The 2N2102 is a direct replacement for the 2N1613. In addition, because of its junction design, the 2N2102 has higher breakdown-voltage ratings, higher d
8) 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 DEVICES LEVELS 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 500 mAdc Collector Current Total Power Dissipation @ TA = +25C 2N718A 2N1613, L PT 0.5 0.8 W Total Power Dissipation @ TC = +25C 2N718A 2N1613, L PT 1.8 3.0 W TJ, Tstg -65 to +200 C RJC 97 58 C/W Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case 2N718A 2N1613, L TO-18 (TO-206AA) 2N718A (1) Derate linearly at 4.57 mW/C for 2N1613, L and 2.85mW/C for 2N718A for TA > +25C (2) Derate linearly at 17.2 mW/C for
2N1613 IT wicROELECTRONICS 2N1711 SG S-THOMSON SWITCHES AND UNIVERSAL AMPLIFIERS DESCRIPTION The 2N1613 and 2N1711 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case. They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. } Products approved to CECC 50002-104 avai- lable on request. TO-39 INTERNAL SCHEMATIC DIAGRAM Cc B NPN be OnUy E ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Voso Collector-base Voltage (Iz = 0) 75 Vv Vcer Collector-emitter Voltage (Ree < 10 Q) 50 Vv Veso Emitter-base Voltage (ic = 0) 7 V Ic Collector Current 500 mA Piot Total Power Dissipation at Tamy < 25 C 0.8 WwW at Tease < 25 C 3 WwW at Tease < 100 C 17 WwW Tstg, T; | Storage and Junction Temperature 65 to 200 C January 1989 13 2852N1613-2N1711_ 3 G S-THOMSON _ 30E D MM 7929237 0031104 9 fo B19 THERMAL DATA T-35~ Rthj-case | Thermal Resistance
2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications In Industrial and Commercial Equipment 2N2102 Features: = Gain bandwidth product (ft) = 120 MHz (typ.); useful in applications from dc to 20 MHz = High breakdown voltage: Vierncac = 120 V min. at lo = 0.1 mA # Low saturation voltages: Vce(sat) = 0.5 V max. at Ic = 150 mA Vae(sat) = 1.7 V max. at lc = 150 mA = Beta (Hee) controlled over decades of Ic The RCA-2N1613 and 2N2102 are silicon n-p-n planar transistors intended for a wide variety of small-signal and medium-power applications in military and industrial equipment. They feature exceptionally low noise, low leakage, high switching speed, and high pulsed beta. RCA-2N2102 is a direct replacement for the 2N1613. In addition, because of its junction design, the 2N2102 has higher breakdown-voltage ratings, higher dissipation ratings, lower saturation voltages, higher sustaining voltages, and lower output capacitance. These transist
P | 2N2140 7-78 LPA 95 80 60 | oO 30 75 100M 1.0 500M 2N1610 G| P | 2N2145 7-78 LPA 95 80 60 | 0 50 | 125 100M 0.6 500M 2N1611L G| P | 2N2138 7-78 LPA 95 60 40/0 30 75 100M 1.0 500M 2N1612 | G{ P | 2N2143 7-78 | LPA 95 60 40 }o | 50/125 | 100m 0.6 | 500M 2N1613 S|N 8-30 MSA} 800M /A {200 75 50 }R } 405120 150M 4.5 150M 30 | E 60M | T 2N1613A | S | N | 2N2218 8-108 | MSA 1,0W | A | 200 75 50 7R 40 | 120 150M 1.0 150M 30 ]E 60M | T 2N1613B | S|N MSA] 1.,0W} A |200] 120 55 |R | 40]120| 150M 0.2 | 150M 30 | E 60M | T 2n1614 |G| P | 2N1924 6-37 | MSA| 240M | A | 100 65 40 |R ] 18} 43 20M | 0.13 20M 500K | B 2N1615 |S |N RFA| 5.5M{A {200 ] 100 | LOO |o | 25 5. 0M 5.0 50M 2.0M | T 2N1616 S| N |] 2N3487 7-115 | HPA 60w | c {175 60 60 | 0 15 75 2.04 2.0 2.0A 3.0M | T 2N1616A | s | N | 2N3487 7-115 | LPA a5w tc | 200 60 60 }o} 20] 60] 2.0A 1.0] 2.0A 3.0M | T 2N1L617 S| N | 2N3487 7+115 | HPA 60W | c | 175 80 B80] V 15 75 2.04 2.0 2.0A 3.0M | T 2N161L7A | S| N | 2N3487 7-115] LPA
0 CRY 12.210 SCA 8.160 2N163 NJS QS2 SEI 2N1631 2N1632 NJS QS2 SEI NJS QS2 SEI 2N1637 NJS 2N1638 AT 3.160 F 2.260 ec NJS QS2 SCA SEI 2N1639 AT 6.600 F 4.710 ec 0.900 F 0.640 BC 2N163A AT 1.340 F 0.960 BC 2N164 AT 4.600 F 3.290 ec 2N1640 AT RAY 2.630 JAN7X 2N1613L 5.500 JANTXV 2N1613S RAY 0.750 JAN RAY 1.120 JAM 2N1613S 3.830 JANTXV NJS QS2 SEI NJS QS2 SEI NJS QS2 SE] 2N1641 2N1614 11.000 4.750 GTC 16.800 NJS 11.500 0S2 11.100 SEI 20.000 14.000 9.950 9.600 12000 SEI 2.600 2.510 2.650 NJS QS2 SEI QS2 2N1613L 2N1616 GTC 16.800 NJS 13.750 0S2 13 270 SEI 12.750 14.000 10.900 10.520 9.900 CRY 15.180 SCA 10.190 2N1642 CRY 62.240 47.560 2N1643 CRY NJS QS2 6.960 4.250 4.100 4.740 3.300 3.190 8.500 8.200 7.750 7.480 14.000 9.000 17.400 14.000 16.100 9.000 2N1644 SCA 2N1646 2N1618 GTC 20.160 NJS 18.750 0S2 18.090 SEI 17.750 16.800 16.250 15.680 15.250 NJ S QS2 2N1647 SEI 2N1648 2N161A NJS 0S2 SE] 2N1620 2N1635 2N1613B 2N1617 NJS 2.750 QS2 2.650 2.650 SEI 2
2N1613 - 2N1711 SILICON PLANAR EPITAXIAL TRANSISTORS The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector connected to the case . They are designed for use in high-performance amplifier, oscillator and switching circuits. The 2N1711 is also used to advantage in amplifiers where low noise is an important factor. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCBO VCER VEBO IC ICM Collector-Base Voltage Collector-Emitter Voltage (RBE = 10) Emitter-Base Voltage Collector Current Peak Collector Current PD Total Power Dissipation TJ Junction Temperature TStg Storage Temperature range @ Tcase= 25 @ Tcase= 100 @ Tamb= 25 Value Unit 75 50 7 0.5 1 3 1.7 0.8 200 V V V A A Watts Watts Watts C -65 to +200 C THERMAL CHARACTERISTICS Symbol RthJ-c RthJ-amb Ratings Thermal Resistance, Junction-case Thermal Resistance, Junction-ambient COMSET SEMICONDUCTORS Value Unit 58 219 C/ W C/ W 1/3 NPN 2N1613 - 2N1711 ELECTRICAL CHARACTERISTICS T
2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors For Small-Signal Applications In Industrial and Commercial Equipment 2N2102 Features: = Gain bandwidth product (fr) = 120 MHz (typ.); usetu! in applications from dc to 20 MHz = High breakdown voltage: Vierrceo = 120 V min. at lc =0.1 MA = Low saturation voltages: Vce(sat) = 0.5 V max. at fe = 150 MA Vee(sat) = 7.7 V max. at lc = 150 mA = Beta (Hre) controlled over decades of Ic The RCA-2N1613 and 2N2102 are silicon n-p-n planar transistors intended for a wide variety of small-signal and medium-power applications in military and industrial equipment. They feature exceptionally low noise, tow leakage, high switching speed, and high pulsed beta. RCA-2N2102 Is a direct replacement for the 2N1613. In addition, because of its junction design, the 2N2102 has higher breakdown-voltage ratings, higher dissipation ratings, lower saturation voltages, higher sustaining voltages, and lower output capacitance. These transisto
2N1613 2N1613L 2N718A MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IC 30 75 7.0 500 Vdc Vdc Vdc mAdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range TJ, Tstg 0.5 0.8 1.8 3.0 -55 to +175 Symbol Max. PT W 0 C TO-39 (TO-205AD)* 2N1613 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case TO-18 (TO-206AA)* 2N718A Unit 0 2N718A 97 C/W RJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Coll
2N1613 1 PHIN TN2218 3 NSC TMPT2221 3 SPR 2N3019 a MOTA BU208 1 MOTA D64VP5 a GESY 2N2218A 1 SGSI TP2218 3 SPR TP2221 3 SPR 04008 a GESY 28C1875 a NECE | BU133 D40p7 a GESY | BSY52 BSY76 DE128 3 DGE SU160 a MIKG BU126 1 SGS!I DE123 3 DGE 2N1711 1 PHIN 2N2222 1 PHIN THC3107 3 SPR TIP550 3 TH SVT7523 1 TRWS GES2218A 3 GESY D40D5 3 GESY BSS81C a SIEG | BSYs9 TIP553 3 Til 2N3738 a MOTA PN2221A 3 NSC DE128 3 DGE GES2222 3 GESY BCY58 1 SGSI | BUTO9 2N6308 3 MOTA THC1613 3 SPR PN2222A 3 NSC PN2222 3 NSC BCF32 3 PHIN 2N6671 + RCA 2N6510 3 RCA THG2218A a SPR THC1711 3 SPR THC2222 3 SPR BCF33 a PHIN BU326 1 PHIN 2N6672 a RCA TN2218A 3 NSC BSY53 TMPT2222 3 SPA BSY90 BU607 1 SGSI 8US21B 3 APX TP2218A 3 SPR 2N697 1 RCA TP2222 3 SPR 2N2219 1 PHIN 2N6544 3 MOTA Buwe25 3 SGSI BSY11 2N1613 1 PHIN | BSY?77 DE128 a DGE BU526 3 ALGG BUX16C 3 RCA 2N2219 1 SGSI 2N697 3 MOTA BSV64 1 PHIN GES2219 3 GESY BUS22 3 APX BUX17A 3 RCA DE128 3 DGE 2N1613 a SGS! ] BSY78 THC2219 a SPR D64VE3 3 GESY BUX18