2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM 2N1893X 2N2060 2N2060A 2N2060ADCSM 2N2060DCSM 2N2102 2N2102L 2N2192 2N2192A 2N2192AL 2N2192L 2N2194 2N2194A 2N2197 2N2197-TO39 2N2218 PRODUCT BCY78CSM BCY78DCSM BCY79 BCY79A BCY79B Status Polarity Package NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) PNP TO5 (TO205AA) PNP TO39 (TO205AD) PNP LCC1 PNP LCC2 (MO-041BB) NPN TO61 (TO210AC) NPN TO61 (TO210AC) TO5 (TO205AA) NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO8 NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO5Thermoslug NPN TO53 NPN TO61 (TO210AC) NPN TO61 (TO210AC) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN TO39 (TO205AD) NPN LCC1 NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO77 (MO-002AF) NPN TO77 (MO-002AF) NPN LCC2 (MO-041BB) NPN LCC2 (MO-041BB) NPN TO39 (TO205AD) NPN TO5 (TO205AA) NPN TO39 (TO205AD)
2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/181 DEVICES LEVELS 2N718A 2N1613 2N1613L JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Min. Unit Collector-Emitter Voltage VCEO 30 Vdc Collector-Base Voltage VCBO 75 Vdc Emitter-Base Voltage VEBO 7.0 Vdc IC 500 mAdc Collector Current Total Power Dissipation @ TA = +25C 2N718A 2N1613, L PT 0.5 0.8 W Total Power Dissipation @ TC = +25C 2N718A 2N1613, L PT 1.8 3.0 W TJ, Tstg -65 to +200 C RJC 97 58 C/W Operating & Storage Junction Temperature Range Thermal Resistance, Junction-to-Case 2N718A 2N1613, L TO-18 (TO-206AA) 2N718A (1) Derate linearly at 4.57 mW/C for 2N1613, L and 2.85mW/C for 2N718A for TA > +25C (2) Derate linearly at 17.2 mW/C for 2N1613, L and 10.3mW/C for 2N718A for TC > +25C TO-39 (TO-205AD) 2N1613
ly with this document shall be completed by 28 September 2006. MIL-PRF-19500/181H 28 June 2006 SUPERSEDING MIL-PRF-19500/181G 16 June 2000 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER, TYPES 2N718A, 2N1613, AND 2N1613L, JAN, JANTX, AND JANTXV This specification is approved for use by all Departments and Agencies of the Department of Defense. * The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1. Scope. This specification covers the performance requirements for NPN silicon, low-power transistors. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. 1.2. Physical dimensions. See figure 1, (similar to TO-18) and figure 2, (similar to TO-39 and TO-5). * 1.3. Maximum ratings. Unless otherwise specified, TC = +25C. Type 2N718A 2N1613 2N1613L PT (1) TC = +25C PT (2) TA = +25C VCBO VCEO VEBO IC VCER RBE = 10 RJC RJA TJ an
2N1613L 2N718A MAXIMUM RATINGS Ratings Symbol Value Unit VCEO VCBO VEBO IC 30 75 7.0 500 Vdc Vdc Vdc mAdc Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) 2N718A 2N1613, L @ TC = +250C (2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range TJ, Tstg 0.5 0.8 1.8 3.0 -55 to +175 Symbol Max. PT W 0 C TO-39 (TO-205AD)* 2N1613 THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case TO-18 (TO-206AA)* 2N718A Unit 0 2N718A 97 C/W RJC 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10 mAdc, RBE
0 CRY 12.210 SCA 8.160 2N163 NJS QS2 SEI 2N1631 2N1632 NJS QS2 SEI NJS QS2 SEI 2N1637 NJS 2N1638 AT 3.160 F 2.260 ec NJS QS2 SCA SEI 2N1639 AT 6.600 F 4.710 ec 0.900 F 0.640 BC 2N163A AT 1.340 F 0.960 BC 2N164 AT 4.600 F 3.290 ec 2N1640 AT RAY 2.630 JAN7X 2N1613L 5.500 JANTXV 2N1613S RAY 0.750 JAN RAY 1.120 JAM 2N1613S 3.830 JANTXV NJS QS2 SEI NJS QS2 SEI NJS QS2 SE] 2N1641 2N1614 11.000 4.750 GTC 16.800 NJS 11.500 0S2 11.100 SEI 20.000 14.000 9.950 9.600 12000 SEI 2.600 2.510 2.650 NJS QS2 SEI QS2 2N1613L 2N1616 GTC 16.800 NJS 13.750 0S2 13 270 SEI 12.750 14.000 10.900 10.520 9.900 CRY 15.180 SCA 10.190 2N1642 CRY 62.240 47.560 2N1643 CRY NJS QS2 6.960 4.250 4.100 4.740 3.300 3.190 8.500 8.200 7.750 7.480 14.000 9.000 17.400 14.000 16.100 9.000 2N1644 SCA 2N1646 2N1618 GTC 20.160 NJS 18.750 0S2 18.090 SEI 17.750 16.800 16.250 15.680 15.250 NJ S QS2 2N1647 SEI 2N1648 2N161A NJS 0S2 SE] 2N1620 2N1635 2N1613B 2N1617 NJS 2.750 QS2 2.650 2.650 SEI 2.200 2.120 2.100 NJS QS2 SEI AT RAY 2N1
2N1613L Watertown : TO-5 STD. 184 | 19756: 0.8 | 0.5 75 30 7 1.6 160 | 40 | 120 JAN2N17114 Watertown | TO-5 STD | 225 | 19759: 0.8 | 0.5 75 30 7 1.5 160 100 300 JAN2N1711S Watertown | TO-39 'STD| 225119761, 0.8 | 0.5 | 75 30 7 1.6 150 100 300! JANTX2N1613 | Watertown | TO-39 STD| 181 19754 068 | 0.5 | 75 30 7 1.5 150 40 120 JANTX2N1613L__| Watertown | TO-5 STD/| 181 19757 08 : 05 75 | 30 7 1.6 150 40 120 | JANTX2N17114 | Watertown | TO-5 STD! 225 19760 08 0.5 75 30 7 1.5 150 100 . 300 | JANTXV2N1613 | Watertown | TO-39 STD; 181 19755. 0.8 | 05 75 30 7 1.5 150 40 ,; 120 | _JANTXV2N1613L | Watertown | TO-5 STD! 181 19758; 08 05 75 30: 7 1.5 150 40 | 120 | '2N1890 Watertown | TO-5 sTD '18705/ 08 05 ' 100! 60! 7 1.5 150 100 | 300 | _JAN2N1890 ' Watertown | TO-5 STD| 225 | 19763 | 08 05 100/ 60 7 15 ; 150 100! 300: _ JAN2N1890S Watertown | TO-39 STD | 225 | 19765| 08 0.5 100! 60 7 15 | 150 100 | 300, _JANTX2N1890 Watertown . TO-5 STD| 225 | 19764| 0.8 05 100: 60 7 | 15 {| 150
2N1613L 2N718A MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ T A = +250C (1) 2N718A 2N1613, L 2N718A 2N1613, L @ T C = +250C (2) Operating & Storage Junction Temperature Range Symbol Value Unit VCEO VCBO VEBO IC 30 75 7.0 500 Vdc Vdc Vdc mAdc PT 0.5 0.8 1.8 3.0 T J, T stg -55 to +175 Symbol Max. W TO-39 (TO-205AD)* 2N1613 0 C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case 2N718A 97 RJC 2N1613, L 58 0 0 1) Derate linearly 4.57 mW/ C for 2N1613, L and 2.85 mW/ C for 2N718A for T A > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for T C > +250C TO-18 (TO-206AA)* 2N718A Unit 0 C/W TO-5* 2N1613L *See appendix A for package outline ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 30 mAdc Collector-Emitter Breakdown Voltage IC = 10
2N1613L JAN, JTX, JTXV MIL-PRF QML DEVICES Processed per MIL-PRF-19500/181 LOW-POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C (1) 2N718A 2N1613, L @ TC = +250C(2) 2N718A 2N1613, L Operating & Storage Junction Temperature Range Symbol Value Units VCEO VCBO VEBO IC PT 30 75 7.0 500 Vdc Vdc Vdc mAdc TJ, Tstg 0.5 0.8 1.8 3.0 -55 to +175 2N718A TO- 18 (TO206AA W 0 C 2N1613 TO-39 (TO-205AD) THERMAL CHARACTERISTICS Characteristics Symbol Max. Unit Thermal Resistance, Junction-to-Case RJC 0 2N718A 97 C/W 2N1613, L 58 1) Derate linearly 4.57 mW/0C for 2N1613, L and 2.85 mW/0C for 2N718A for TA > +250C 2) Derate linearly 17.2 mW/0C for 2N1613, L and 10.3 mW/0C for 2N718A for TC > +250C 2N1613L TO-5 ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted) Characteristics Symbol Min. Max. Unit V(BR)CBO 75 Vdc V(BR)EBO 7.0 Vdc V(BR)CEO 30 Vdc OFF CHARACTERISTICS
Dissipation: 1.0 VCBO: 50 VCER: ICBO: ICBO ua: hFE: 40 hFE A: 150M VCE: VBE: IC A: COB: 60 fT: 60 Case Style: TO-205AD/TO-39 Industry Type: 2N1613A STI Type: 2N3587DIE Industry Type: 2C3587 V CEO: 45 ICBO ICEX: h FE: 80 IC: 1.0 V CE: Case Style: STI Type: 2N1613L Notes: Polarity: NPN Power Dissipation: 800M VCBO: 30 VCER: ICBO: ICBO ua: hFE: 40 hFE A: 150M VCE: VBE: IC A: COB: fT: Case Style: TO-205AD/TO-39 Industry Type: 2N1613L STI Type: 2N1700 Notes: Polarity: NPN Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 20 hFE A: 100M VCE: VBE: IC A: COB: 30 fT: 32 Case Style: TO-205AD/TO-39 Industry Type: 2N1700 STI Type: 2N1711 Notes: Polarity: NPN Power Dissipation: .8 VCBO: 50 VCER: ICBO: ICBO ua: hFE: 100 hFE A: 150M VCE: VBE: IC A: COB: 25 fT: 70 Case Style: TO-205AD/TO-39 Industry Type: 2N1711 STI Type: 2N1711 Notes: Polarity: NPN Power Dissipation: Tj: VCBO: VCEO: 50 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1711 STI Type:
plc - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 1N914CSM 4N4001CSM 1N4001QCSM 1N4003CSM4 1N4003QCSM 1N4148CSM 1N4151CSM 1N4572ACSMD 1N5617CSMD 1N5711CSM 2C 415 2C 425 2C 444 2C 746 2N1132 2N1208 2N1209 2N1483A 2N1484A 2N1485A 2N1486A 2N1507 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1716 2N1721 2N1724 2N1724A 2N1725 2N1889 2N1890 2N1893 2N1936 2N1937 2N1991 2N2060 2N2060A 2N2060DCSM 2N2102 2N2192 2N2192A 2N2192L 2N2193 2N2193A 2N2194 2N2194A 2N2218 2N2218 CECC 2N2218A 2N2218A CECC 2N2218AQF 2N2219 2N2219 CECC 2N2219A 2N2219A CECC 2N2219AL 2N2219AQF 2N2221 2N2221 CECC 2N2221A 2N2221A CECC 2N2221ACSM 2N2221ACSM CECC 2N2221ADCSM 2N2221ADCSM 2N2221 AQF 2N2221CSM 2N2221CSM CECC 2N2221DCSM 2N2221DCSM 2N2222 2N2222 CECC 3N2222A 2N2222A CECC 2N2222ACSM 2N2222ACSM CECC 2N2222ACSM4 2N2222ADCSM Description Ceramic Surface Mount Ceramic Surface Mount Quad diode in LCC2 Ceramic Surface Mount 4x hermetic Ceramic Surface Mount Ceramic Surface Mount hermetic SM hermetic SM Ceramic Surface Mount Dual de
2N1613L Dimensions in mm (inches). 8.51 (0.34) 9.40 (0.37) Bipolar NPN Device in a Hermetically sealed TO5 Metal Package. 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 38.00 (1.5) min. Bipolar NPN Device. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. VCEO = 50V IC = 0.5A 5.08 (0.200) typ. All Semelab hermetically sealed products can be processed in accordance with the requirements of BS, CECC and JAN, JANTX, JANTXV and JANS specifications 2.54 (0.100) 2 1 3 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.86 (0.034) 45 TO5 (TO205AA) PINOUTS 1 - Emitter Parameter 2 - Base 3 - Collector Max. Units VCEO* 50 V IC(CONT) 0.5 A 120 - hFE Test Conditions @ 10/0.15 (VCE / IC) Min. Typ. 40 ft 70M PD Hz 0.8 W * Maximum Working Voltage This is a shortform datasheet. For a full datasheet please contact sales@semelab.co.uk. Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and relia