s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base) TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
C | 150K 60/150 | SOOMA] AHG|OBS] ASZ16 | 2N1536 | 0 2N1761 pG | 08S | OBS gov | 65V |30V 3A 95C z8wC | 150K 60/150 | 500MA| AHG|OBS| ASZ16 | 2N1536 | 0 2N1762 pg | ops | ops | 100v | 7Sv [30V 3A 95C 2awC | 150K 60/150 | 5OOMA| AHG|OBS| ASZ16 | 2N1536 | 0 2N1763 ys | Tos | Lod 35v | 25v jovs | SOMA | 175C| 300MWF . | 3p | 20MN ima] ALG|OBS| BFYSO | 2N2297 | 2 2N1764 ns | TOS | LO4 35v | 1sv fovs | SOMA | 175C | 3OOMWF 3P | 20MN ima] RLG]OBS] BFYSO | 2N2297 | 2 2n1779 ne | To46 | LOL 25v 1sv | 200mMa | 100C | LOOMWF 3m isp | 20/60 | 30MA] AMGJOBS| ASY29 | 2N1304 |; 2 2N1780 NG | TO46 | LOL 25V 15v ) 200MA | 100C | 100MWF 4m] sp [30/110 | 30MAl RMG]OBS| ASY29 | 2N1304 | 2 2N1781 NG | TO46 ) Lol 25v 1. |{12v | 200MA | 100C} 100MWF am|15P ] 40MN | 20MA) RMG]OBS] ASY29 | 2N1304 | 2 2N1782 pa | TO46 | LOL 30v | 20v }20v | 200MA | 100C | LOOMWF 5m} isp |30/150 | 10MA] RMG}OBS| ASY27 | 2N1305 | 2 2N1783 pg | TO46 | LOl 3ov | 2ov }1sv | 200MA | 100C{ 100MWF 5m|14P | 20MN | 10MA| AMG/OBS| ASY27 | 2N1305 |
52 2N6278 17 164-08 1748-1830 1768-1620 2N1513 2N2130 2N2763 2N3236 2N5157 2N6279 18 164-10 1756-0640 1768-1630 2N1514 2N2131 2N2764 2N3238 2N5251 2N6280 19 164-12 1756-0660 1768-1810 2N1703 2N2132 2N2765 2N3239 2N5301 2N6281 20 164-14 1756-0840 1768-1820 2N1763 2N2133 2N2766 2N3240 2N5302 2N6324 21 164-18 1756-0860 1768-1830 2N1776 2N2226 2N2769 2N3260 2N5331 2N6325 22 164-20 1756-1040 1776-0440 2N1936 2N2227 2N2770 2N3266 2N5466 2N6327 23 164-22 1756-1060 1776-0460 2N1937 2N2228 2N2771 2N3441 2N5467 2N6328 24 164-24 1756-1240 1776-0660 2N2229 2N2772 2N3442 2N5539 2N6359 25 164-26 1756-1260 1776-0840 2N2230 2N2775 2N3470 2N5560 2N6360 26 164-30 1756-1440 1776-0860 2N2231 2N2776 2N3471 2N5584 2N6470 27 1756-1640 1776-1040 2N2232 2N2777 2N3472 2N5588 2N6471 28 1756-1660 1776-1060 2N2233 2N2778 2N3473 2N5633 2N6472 29 1756-1840 1776-1240 2N2338 2N2815 2N3474 2N5634 2N6674 30 1756-1860 1776-1260 2N2528 2N2816 2N3475 2N5733 31 1776-1440 2N2580 2N2817 2N3476 2N5758 32 1776-1460 2N2580M 2N2818 2N3477 2
3.0A 15K] E 2N1760 G| P | 2N2143 7-78 PMS 28W | C 95 60 50 |S 60 | 150 0.5A 0.5 3.04 ISK], E 2N1761 G{ P| 2N2144 7-78 PMS 28W |] Cc 95 80 65 )S 60 | 150 0,54 0.5 3.04 ISK] E 2N1762 Gi P| 2N2145 7-78 PMS 28W | Cc 95 100 75 |S 60 | 150 0.54 0.5 3.0A 15K | E 2N1763 SN MSS 0.3W {A [175 40 25 | 0 1.5 10M 2N1764 Sj N MSS O.3W1A] 175 20 15 | 0 1.5 10M 2N1765 Thyristor, see Table on Page 1-154 2N1768 S| N] 2N3713 7-125] MSS 40W } C } 200 60 40)0 35 | 100 750M } 0.75 750M 600K | B 2N1769 8 | N | 2N2713 | 7-125] MSS how | 200 100 55 |0 35 | 100 750M | 0.75 750M 600K |B 2N1770 thru Thyristors, see Table on Page 1-154 2N1778 2N1779 G| P MSS LooM | A | 100 25 20 }R 20 60 30M 2N1780 S| P MSS 100M | A | 100 25 25 |R 30 | 110 30M 4,.0M 1B 2N1L781 G| P MSS 100M | A } 100 25 25 |X 40 20M | 0.15 12M 4.0M |B 2N1782 G | P MSS 100M | A | 100 30 20 |X 30 | 150 10M | 0.20 50M 5.0M {7B 2N1783 G| P MSS 100M | A | 100 30 1570 20 10M 0.32 200M 30)E 5.0M [B 2N1784 GI} P MSS 100M | A | LOO 30 20 }0 20 LOM | 0.32 200M 10M |B 2
+4}4 2N 1761 GpdStc -Ge-P =2N1759: 80V (AL 102...103, AUY 20, 2N1546,..48,++)4 2N1762 =ssGpd,Stc = Ge-P=2NI759: 100V. _ _ (AL 102...103, AUY 34, 2N1547...48,44)4 2N 1763 Ray Si-N S, 40V, 0,05A, 0,3W, <32/58 2a T0-5 2N3722....25, 2801385 2N 1764 Ray _sS-N =2N1763: 20V - 2a T0-5 _ 2N9722...95,2801885 2N1765 Wes SOHz-Thy 400V,0,5A, IgvIn<10/<5mA 2a T0-5 _ 2N1599, BTX 30/400, T 1N400, TAG 1-400++ 2N 1768 USA Si-N $ P, 60V, 3A, 40W T0-57 (BD 241A, BD 535, BD 539A, BD 935,++)4 2N1769 _USA Si-N __=2N1768: 1000 T0-57 {BD 2416, BD 5396, BD 937, 26D712,++)4 2N1779 Ete,Syl Ge-N LFS, 25V, 0,1A, 0,1W, 5MHz, hFE>20 2a TO-46 ASY 28...29, ASY 73...75 2N 1780 Ete, Syl Ge-N =2N1779: 8MHz, hFE>30 2a T0-46 ASY 28...29, ASY 73...75 2N 1781 Ete, Syl Ge-N =2N1779: 6MHz, hFE>40 2a TO-46 ASY 28...29, ASY 73...75 2N 1782 Etc,Syl Ge-P LFS, 30V, 0,1, 0,1W, 8MHz, hFE>30 2a TO-46 ASY 26, ASY 76...77 2.N 1783 Ete,Syl Ge-N =2N1779: 30V, 8MHz 2a TO-46 ASY 28, ASY 73...75 2N1784 Ftc,Syl_ Ge-P. =2N1782: 12MHz, hFE>20 2a TO-46 ee A
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
3.0A 15K] E 2N1760 G| P | 2N2143 7-78 PMS 28W | C 95 60 50 |S 60 | 150 0.5A 0.5 3.04 ISK], E 2N1761 G{ P| 2N2144 7-78 PMS 28W |] Cc 95 80 65 )S 60 | 150 0,54 0.5 3.04 ISK] E 2N1762 Gi P| 2N2145 7-78 PMS 28W | Cc 95 100 75 |S 60 | 150 0.54 0.5 3.0A 15K | E 2N1763 SN MSS 0.3W {A [175 40 25 | 0 1.5 10M 2N1764 Sj N MSS O.3W1A] 175 20 15 | 0 1.5 10M 2N1765 Thyristor, see Table on Page 1-154 2N1768 S| N] 2N3713 7-125] MSS 40W } C } 200 60 40)0 35 | 100 750M } 0.75 750M 600K | B 2N1769 8 | N | 2N2713 | 7-125] MSS how | 200 100 55 |0 35 | 100 750M | 0.75 750M 600K |B 2N1770 thru Thyristors, see Table on Page 1-154 2N1778 2N1779 G| P MSS LooM | A | 100 25 20 }R 20 60 30M 2N1780 S| P MSS 100M | A | 100 25 25 |R 30 | 110 30M 4,.0M 1B 2N1L781 G| P MSS 100M | A } 100 25 25 |X 40 20M | 0.15 12M 4.0M |B 2N1782 G | P MSS 100M | A | 100 30 20 |X 30 | 150 10M | 0.20 50M 5.0M {7B 2N1783 G| P MSS 100M | A | 100 30 1570 20 10M 0.32 200M 30)E 5.0M [B 2N1784 GI} P MSS 100M | A | LOO 30 20 }0 20 LOM | 0.32 200M 10M |B 2
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC
s P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)TYPE No. NS1110 BSV38 A198 HSC4392 LDF691 HSC5639 RH120 2N2967 V221 M 1B 2N4095 MEM402 2N1763 CMX740 2N781 BSW31 MEM201 2N695 MEM100 98T2 BSV34 04021 BSX84 BSW9S5A 38311 2N803 2N806 2N821 2N802 2SC406 153-24 163-30 164-28 B170021 163-26 164-24 112 RISE TIME tr 1.0n 3.0n 5.0n 5.0n 5.0n 8.0n 10ng 15n@ 15nD 18n 75n n 85nt 100n 100n 150n 200n 400ngt 800n 800n 800n D.A.T.A. DELAY TIME td 5.0n 6.0n 15nd 15nD 15n@ 10n n 25ns STORE| FALL TIME | TIME ts tf 4.0n 25nd 35 33n 75nSt 50n 100nS 100n 100n 150n 40nt 150n 100n 400nd 400n 400nZt 550n 500n 550n 550n 700n 6.0udt 6.Ougt 6.0ugt 500n 12ud 12ud IN FREE AIR @ 25C 500m 300mm 200m 310m 360m 31 200m 300m 300m 60m 1:8 600m 300m 400m Vcb le 5.0 @ 1.0% Cob SYMBOLS AND CODES IN ORDER OF (1) fab, (2) MAX RISE TIME & bb X Cob P-PNP Ss Si Si Si Ss s Si $s Ss Ge EXPLAINED IN INTERPRETER N-NPN T STRUC