2019 SUPERSEDING MIL-PRF-19500/291W 17 May 2016 The documentation and process conversion measures necessary to comply with this revision shall be completed by 29 July 2019. PERFORMANCE SPECIFICATION SHEET TRANSISTOR, PNP, SILICON, SWITCHING, DEVICE TYPES 2N2906A AND 2N2907A, ENCAPSULATED (THROUGH HOLE AND SURFACE MOUNT PACKAGES) AND UNENCAPSULATED, RADIATION HARDNESS ASSURANCE, QUALITY LEVELS JAN, JANTX, JANTXV, JANS, JANHC, AND JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated de
ess conversion measures necessary to comply with this document shall be completed by 17 August 2016. MIL-PRF-19500/291W 17 May 2016 SUPERSEDING MIL-PRF-19500/291V 16 October 2014 PERFORMANCE SPECIFICATION SHEET * TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2907A, JAN, JANTX, JANTXV, JANS, JANHC, JANKC This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance(JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANTXV, JANS, JANHC, an
Hz PNP 60V 0.6A 40 120 10/0.15 200MHz Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack Quad Ceramic Flat Pack 2N2368AQF Quad Transistor 2N2369AQF Quad Transistor 2N2857QF Quad Transistor 2N2894AQF Quad Transistor 2N2906AQF Quad Transistor 2N2907AQCSM Quad Transistor LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQF Quad Transistor Quad Ceramic Flat PNP Pack 60V 0.6A 100 300 10/0.15 200MHz LCC20 PNP 60V 0.6A 100 300 10/0.15 200MHz LCC6 PNP 60V 0.6A 100 300 10/0.15 200MHz 2N2907AQLCC20 2N2907EX8CSM Quad Transistor 8 Transistor Array 1.9GHz 2N3209AQF Quad Transistor 2N3251AQF Quad Transistor 2N7334 2N7335 Quad MOSFET Quad MOSFET 2N7336 Array 2N918AQF Quad Transistor BC107QF Quad Transistor BC108QF Quad Transistor BC109QF Quad Transistor BC477QF Quad Transistor BC478QF Quad Transistor BC479QF Quad Transistor BCY58QF Quad Transistor BCY59QF Quad Transistor BCY70QF Quad Transistor BCY71QF Quad Transistor BCY72QF Quad Transistor BFX46QF Quad Transistor BFX48QF
ument shall be completed by 9 May 2010. INCH-POUND MIL-PRF-19500/291R w/AMENDMENT 2 9 February 2010 SUPERSEDING MIL-PRF-19500/291R w/AMENDMENT 1 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, AND 2N2907AUBC, JAN, JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCB, JANHCD JANKCB, JANKCD JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsul
cessary to comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performan
A 2N2453 2N2483 2N2484 2N2497 2N2498 2N2499 2N2500 2N2537 2N2538 2N2539 2N2540 2N2586 2N2604 2N2605 2N2608 2N2609 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2646 2N2647 2N2802 2N2803 2N2804 2N2805 2N2806 2N2807 2N2880 2N2894 2N2904 2N2904A 2N2905 2N2905A 2N2906 2N2906A 2N2907 2N2907A 2N2913 2N2914 2N2915 2N2915A 2N2916 POWE RRefer to The Power Semiconductor Data Book for Design Engineers, First Edition (CC-404). SEC.-PAGE 4-121 4-123 4-123 4-125 4-125 4-127 4-129 4-129 4-131 4-131 4-131 4-131 4-132 4-132 4-132 4-132 4-136 4-138 4-138 4-142 4-142 4-143 4-143 4-143 4-143 4-143 4-143 4-145 4-145 4-147 4-147 4-147 4-147 4-147 4-147 POWER 4-149 4-151 4-151 4-151 4-151 4-151 4-151 4-151 4-151 4-163 4-163 4-163 4-163 4-163 TYPE NO. 2N2916A 2N2917 2N2918 2N2919 2N2919A 2N2920 2N2920A 2N2944 2N2944A 2N2945 2N2945A 2N2946 2N2946A 2N2972 2N2973 2N2974 2N2975 2N2976 2N2977 2N2978 2N2979 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3001 2N3002 2N3003 2N3004 2N3005 2N3006 2N3007 2N30
cessary to comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performan
19AL 290 20 20 JANS2N2905AL JANS2N2905AL 251 20 X 251 20 JANSR2N2219AL JANSR2N2219AL 290 20 X 290 20 JANSR2N2905AL JANSR2N2905AL 255 20 X 290 255 20 JAN2N2222A JANSF2N2905AL JAN2N2222A 290 JANSF2N2905AL 255 20 X 291 255 20 291 JANTX2N2222A JANTX2N2222A JAN2N2906A JAN2N2906A 291 255 20 X 291 255 20 JANTX2N2906A JANTXV2N2222A JANTXV2N2222A 2N2222A JANTX2N2906A 291 291 255 20 X 255 20 JANTXV2N2906A JANTXV2N2906A JANS2N2222A 2N2906A JANS2N2222A 291 291 20 X 20 JANS2N2906A JANS2N2906A 255 20 X 255 20 JANSR2N2222A JANSR2N2222A Bipolar Transistors 2N2219AL PART NUMBER 2N720A 2N2222A 2N918 2N2369A 2N930 2N2484 2N1893 2N2605 2N1893S 2N2060 2N2857 2N2218 2N2904 2N2218A 2N2904A 2N2218AL 2N2904AL 2N2219 2N2905 2N2219A 2N2905A 2N2219AL 2N2905AL 2N2222A 2N2906A 20 X 20- - TO-39 TO-39 NPN - NPN 50 - 75 50 6 75 0.8 6 0.8 0.8 195 0.8 195 -65 to +200 -65 to +200 325 0.3 325 0.3 20 X 20- - TO-39 TO-3
N770 2N3013 2N917A PNS 18=18 2N634 AC127 2N771 2N30 13 2N9 18 PNS 18-18 2NG34A AC 127 2N772 2N3013 2N9 19 2N834 2N647 AC127 2N773 2N3013 2N920 2N834 2N649 AC127 2N774 2N3013 2ng21 2N834 2N655 AC128 2N775 2N3013 2ng22 2N834 2N696A 2N2218 2N776 2N3013 2N923 2N2906 2N699 2N1893 2N777 2N3013 2n924 2N2906 2N699A 2N 1893 2N778 2N3013 2N925 2N2906 2N6998 2N 1893 2N780 2N930 2N926 2N2906 2n702 2N3946 2N7B4A 2N834 2N927 2N2906 2N703 2N3946 2N789 2N3946 2N928 2N2906 2N706C 2N2369 2N730 2N3946 2N929 GES929 2N709 2N2369A 2N791 2N3946 2N929A 2N2484 2N715 2N2221 2n792 2N3946 2N930 GES930 2N7 16 2N2221 2N793 2N3946 2N935 2N2906 2N721A 2N2906 2NB34A 2N2369A 2N936 2N2906 2N722A 2N2906 2N839 2N3946 2N937 2N2906 2N726 2N3250 2N840 2N3946 2N938 2N2906 2N727 PN3250 2N842 2N3946 2N939 2N2906 2N728 80107 2N843 2N3946 2N940 2N2906 2N730 2N??21B 2N844 2N7
0:4] 150M 200M | T 2N2904A1 S| P 8-169] HSS 3.0W} C! 200 60 601 0 40] 120 150M 0.4 159M 200M | T 2N2905 S| P 8-169) HSS 3.Q0W} C7} 200 60 40] O} 100] 300 150M 0.4 150M 200M | T 2N2905A| S{ P 8-169| HSS 3.0W| C] 200 60 60} Of 100] 30 150M 0.4 150M 200M | T 2N2906 S|] P 8-169] HSS 1.8W|] C] 200 60 40] 0 40] 120 150M Q.4 150M 200M | T 2N2906A | S| P 8-169) HSS 1.8W] Cc} 200 60 60] 0 40) 120 150M 0.4 150M 200M | T 2N2907 S| P 8-169] HSS 1.8W] C] 200 60 40] O} 100} 300 150M 0.4 150M 200M} T 5n2007A| S| P 8-169} HSS} 1:8w| Cc} 200 60 60] 0} 100] 300} 150M 0:4} 150M 200M | T 2N2908 Sj] N LPA 75W| C| 200 80 80; R 12 60 1.0A LO 1.0A lO) E LOM} E 2N2909 Ss; N HSA 0.4W] A} 200 60 40] 0 40] 120] 0.154 0.25} 0.154 50M | T 2N2910 S] N| 2N3409 11-33] DFA 0.3W] A} 200 45 2510 70 O.1M 1.0 LOM 50]E LIM] T 2N2911 S{ N| 2N3766 7-142| PMS 5.0W| cl 200 150 1251, 0 20 60 1L.OA 0.3 L.OA L.OM| T 2N2912 G| P 7=97 PMS 75W 1 C | 110 15 6.0] 0 75 104 0.5 254 20M } T 2N2913 Sy N 11-27] DFA 300M | A | 200 45 4510
0:4] 150M 200M | T 2N2904A1 S| P 8-169] HSS 3.0W} C! 200 60 601 0 40] 120 150M 0.4 159M 200M | T 2N2905 S| P 8-169) HSS 3.Q0W} C7} 200 60 40] O} 100] 300 150M 0.4 150M 200M | T 2N2905A| S{ P 8-169| HSS 3.0W| C] 200 60 60} Of 100] 30 150M 0.4 150M 200M | T 2N2906 S|] P 8-169] HSS 1.8W|] C] 200 60 40] 0 40] 120 150M Q.4 150M 200M | T 2N2906A | S| P 8-169) HSS 1.8W] Cc} 200 60 60] 0 40) 120 150M 0.4 150M 200M | T 2N2907 S| P 8-169] HSS 1.8W] C] 200 60 40] O} 100} 300 150M 0.4 150M 200M} T 5n2007A| S| P 8-169} HSS} 1:8w| Cc} 200 60 60] 0} 100] 300} 150M 0:4} 150M 200M | T 2N2908 Sj] N LPA 75W| C| 200 80 80; R 12 60 1.0A LO 1.0A lO) E LOM} E 2N2909 Ss; N HSA 0.4W] A} 200 60 40] 0 40] 120] 0.154 0.25} 0.154 50M | T 2N2910 S] N| 2N3409 11-33] DFA 0.3W] A} 200 45 2510 70 O.1M 1.0 LOM 50]E LIM] T 2N2911 S{ N| 2N3766 7-142| PMS 5.0W| cl 200 150 1251, 0 20 60 1L.OA 0.3 L.OA L.OM| T 2N2912 G| P 7=97 PMS 75W 1 C | 110 15 6.0] 0 75 104 0.5 254 20M } T 2N2913 Sy N 11-27] DFA 300M | A | 200 45 4510
2N2906 2N2907 2N2906A 2N2907A PNP SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2906, 2N2907 series types are silicon PNP epitaxial planar transistors designed for small signal, general purpose switching applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (TA=25C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD PD TJ, Tstg JA JC 2N2906 2N2907 60 40 ELECTRICAL CHARACTERISTICS: (TA=25C unless otherwise noted) 2N2906 2N2907 SYMBOL TEST CONDITIONS MIN MAX ICBO VCB=50V 20 ICBO VCB=50V, TA=150C 20 ICEV VCE=30V, VEB=0.5V 50 BVCBO IC=10A 60 BVCEO IC=10mA 40 BVEBO IE=10A 5.0 VCE(SAT) IC=150mA, IB=15mA 0.4 VCE(SAT) IC=500mA, IB=50mA 1.6 VBE(SAT) IC=150mA, IB=15mA 1.3 VBE(SAT) IC=500mA, IB
2N2906A 2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current V
31 AC 187 2N181 AC128 2N306 AC127 2N432 AC187 2N185 AC128 2N306A AC127 2N4 33 AC 187 2N186 AC128 2N322 AC128 2N439A AC127 2N186A AC128 2N323 AC128 2N4G47 AC127 2N187 AC128 2N324 AC126 ONGGT7A AC127 2N187A AC128 2N325 AD1&9 2N460 AC 128 2N188 AC 128 2N327 2N2906 2N461 AC128 2N186A AC128 2N327A 2N2906 2NL64 AC128 2N191 AC128 2N3278 2N2906 2N465 AC 128 2nis2 AC128 2N328 2N2906 PNGGE AC128 2N195 AC128 2N328A 2N2906 2N467 AC 128 2N196 AC 128 2N3288 2N2906 2N470 2N2221 2N199 AC128 2N329 2N2906 2N4G7 1 2N2221 2N213 AC 187 2N329A 2N2906 2N471A 2N2221 2N2 14 AC127 2N3298 2N2906 2N472 2N2221 2N217 AC128 2N330 2N2906 2N4G72A 2N2221 2N224 AC128 2N330A 2N2906 2NG73 2N2221 2N225 AC128 2N331 AC128 2NG74 2N2221 2N226 AC128 2N332 2N2221 ONG TGA 2N2221 2N227 AT 128 2N332A 2N2218 2NG75 2N2221 2N228 AC127 2N333 2N2221 2NG75A 2N2221 2N229 AC 127 2N333A 2N2218 PNGT6 2N2221 2N230 AD149 2N33
necessary to comply with this revision shall be completed by 1 October 2002. INCH-POUND MIL-PRF-19500/291K 1 July 2002 SUPERSEDING MIL-PRF-19500/291J 5 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC This Specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimensions. See figure 1 (similar to a T0-18), figures 2 and 3 (surface mount case outlines UA and UB), and figures 4 and 5 (JANHC and JANKC). 1.3 Maximum