0 X 20 JANSR2N2906A JANSR2N2906A 301 16 X 301 16 JANTX2N918 JANTX2N918 291 20 X 291 20 JANSF2N2906A JANSF2N2906A 301 16 X 301 16 JANTXV2N918 JANTXV2N918 2N918 291 20 X 291 20 JANSF2905AL 301 16 X 301 16 JANS2N918 JANSF2905AL JANS2N918 291 20 X 291 20 JANTX2N2906AL JANTX2N2906AL 301 16 X 301 16 JANSR2N918 JANSR2N918 291 20 X 291 20 JANTXV2N2906AL JANTXV2N2906AL 301 16 X 301 16 2N2906AL JANSF2N918 JANSF2N918 291 20 X 291 20 JANS2N2906AL JANS2N2906AL 253 18 X 253 18 JAN2N930 JAN2N930291 20 JANSR2N2906AL 20 X 291 JANSR2N2906AL 253 18 X 253 18 JANTX2N930 JANTX2N930 2N930 291 20 X 291 20 JANSF2N2906AL JANSF2N2906AL 253 18 X 253 18 JANTXV2N930JAN2N2907A JANTXV2N930 291 20 X 291 20 JAN2N2907A 182 30 X 182 30 JAN2N1893 JANTX2N2907A JAN2N1893 291 20 X 291 20 JANTX2N2907A 182 30 X 182 30 JANTX2N1893 JANTX2N1893 2N1893 291 20 X 291 20 JANTXV2N2907A JANTXV2N2907A 2N2907A JANTXV2N18
ces c=0 Sample size N/A Not applicable Subgroup 6 ESD 1020 Subgroup 8 Reverse stability 1033 Condition B. 1017 See 4.5.3. Subgroup 12 Neutron irradiation 22 45 devices c=0 MIL-PRF-19500/291Y TEMPERATURE-POWER DERATING CURVE TA =+25C; DEVICE TYPES 2N2906A, 2N2906AL, 2N2907A, AND 2N2907AL NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 6. Temperature-power derating for TO-206AA package (RJA) leads .125 inch (3.18 mm) PCB. 23 MIL-PRF-19500/291Y
o comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assuran
o comply with this document shall be completed by 16 January 2015. MIL-PRF-19500/291V 16 October 2014 SUPERSEDING MIL-PRF-19500/291U 16 February 2013 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, 2N2907AUBC, 2N2906AUBN, 2N2906AUBCN, 2N2907AUBN, AND 2N2907AUBCN, JAN, JANTX, JANTXV, JANTXVM, JANTXVD, JANTXVP, JANTXVL, JANTXVR, JANTXVF, JANTXVG, JANTXVH, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHC, JANKC, JANKCM, JANKCD, JANKCP, JANKCL, JANKCR, JANKCF, JANKCG, AND JANKCH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE * 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assuran
at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most users want to limit TJ in their application. FIGURE 6. Temperature-power derating for 2N2906A, 2N2906AL, 2N2907A and 2N2907AL (RJA) leads .125 inch (3.18 mm) PCB (TO-18). 24 MIL-PRF-19500/291W Temperature-Power Derating Curve Tc =+25C; 2N2906A, 2N2906AL, 2N2907A, and 2N2907AL NOTES: 1. This is the true inverse of the worst case thermal resistance value. All devices are capable of operating at TJ specified on this curve. Any parallel line to this curve will intersect the appropriate power for the desired maximum TJ allowed. 2. Derate design curve constrained by the maximum junction temperatures and power rating specified. (See 1.3 herein.) 3. Derate design curve chosen at TJ +150C, where the maximum temperature of electrical test is performed. 4. Derate design curve chosen at TJ +125C, and +110C to show power rating where most
ll be completed by 9 May 2010. INCH-POUND MIL-PRF-19500/291R w/AMENDMENT 2 9 February 2010 SUPERSEDING MIL-PRF-19500/291R w/AMENDMENT 1 20 March 2008 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA, 2N2907AUA, 2N2906AUB, 2N2906AUBC, 2N2907AUB, AND 2N2907AUBC, JAN, JANTX, JANTXV, JANJ, JANS, JANSM, JANSD, JANSP, JANSL, JANSR, JANSF, JANSG, JANSH JANHCB, JANHCD JANKCB, JANKCD JANKCBM, JANKCBD, JANKCBP, JANKCBL, JANKCBR, JANKCBF, JANKCBG, AND JANKCBH This specification is approved for use by all Departments and Agencies of the Department of Defense. The requirements for acquiring the product described herein shall consist of this specification sheet and MIL-PRF-19500. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels
2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Vdc ICBO 10 10 Adc Adc IEBO 50 10 Adc Adc ICES 50 Adc 4 PIN 2N
y to comply with this revision shall be completed by 1 October 2002. INCH-POUND MIL-PRF-19500/291K 1 July 2002 SUPERSEDING MIL-PRF-19500/291J 5 August 2000 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, SWITCHING, TYPES 2N2906A, 2N2906AL, 2N2907A, 2N2907AL, 2N2906AUA 2N2907AUA, 2N2906AUB, AND 2N2907AUB JAN, JANTX, JANTXV, JANJ, JANS, JANHC, AND JANKC This Specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for PNP, silicon, switching transistors. Five levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500 and two levels of product assurance are provided for each unencapsulated device type. * 1.2 Physical dimensions. See figure 1 (similar to a T0-18), figures 2 and 3 (surface mount case outlines UA and UB), and figures 4 and 5 (JANHC and JANKC). 1.3 Maximum ratings. Types PT IC VCBO VCEO VEBO RJA TJ and T
2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Vdc ICBO 10 10 Adc Adc IEBO 50 10 Adc Adc ICES 50 Adc 4 PIN 2N
2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc 0.5 W Top, Tstg -65 to +200 C Symbol Max. Unit RJA (1) 325 C/W Collector Current Total Power Dissipation @ TA = +25C PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 4 PIN 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Vdc Collector-Base Cut
2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC * 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC * JAN JANTX JANTXV JANS * Available to JANS quality level only. ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current IC 600 mAdc Total Power Dissipation @ TA = +25C PT 0.5 W TO-18 (TO-206AA) Top, Tstg -65 to +200 C 2N2906A, 2N2907A Operating & Storage Junction Temperature Range Note: Consult 19500/291 for Thermal Performance Curves. ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Collector-Base Cutoff Current VCB = 60Vdc VCB = 50Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc Collector-Emitter Cutoff Current VCE = 50Vdc Vdc ICBO 10 10 Adc Adc IEBO 50 10 Adc Adc ICES 50 Adc 4 PIN 2N
2N2906AL 2N2906AUA 2N2906AUB Qualified Level JAN JANTX JANTXV JANS 2N2907A 2N2907AL 2N2907AUA 2N2907AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation @ TA = +250C @ TC = +250C Symbol All Types Unit VCEO VCBO VEBO IC PT(1) PT(2 / 3) 60 60 5.0 600 0.4 1.8 Vdc Vdc Vdc mAdc W W Operating & Storage Junction Temperature Range TJ, Tstg 1) Derate linearly 2.28 mW/0C for TA > +250C. 2) Derate linearly 10.3 mW/0C for TC > +250C. 3) For UA and UB surface mount case outlines: PT = 1.16 W; derate linearly 6.6mW/0C for TC > +250C. -65 to +200 0 C TO-18* (TO-206AA) 4 PIN* 2N2906AUA, 2N2907AUA 3 PIN* 2N2906AUB, 2N2907AUB *See appendix A for package outline 0 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Characteristics Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10 mAdc Collector-Base Cutoff Current VCE = 50 Vdc VCE = 60 Vdc Collector-Base Cutoff Current VCE
2N2906AL 2N2906AUA 2N2906AUB 2N2906AUBC 2N2907A 2N2907AL 2N2907AUA 2N2907AUB 2N2907AUBC JANSM - 3K Rads (Si) JANSD - 10K Rads (Si) JANSP - 30K Rads (Si) JANSL - 50K Rads (Si) JANSR - 100K Rads (Si) ABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) Parameters / Test Conditions Symbol Value Unit Collector-Emitter Voltage VCEO 60 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc IC 600 mAdc 0.5 W Top, Tstg -65 to +200 C Symbol Max. Unit RJA (1) 325 C/W Collector Current Total Power Dissipation @ TA = +25C PT Operating & Storage Junction Temperature Range (1) TO-18 (TO-206AA) 2N2906A, 2N2907A THERMAL CHARACTERISTICS Parameters / Test Conditions Thermal Resistance, Junction-to-Ambient 4 PIN 1. See MIL-PRF-19500/291 for derating curves. 2N2906AUA, 2N2907AUA ELECTRICAL CHARACTERISTICS (TA = +25C, unless otherwise noted) Parameters / Test Conditions Symbol Min. V(BR)CEO 60 Max. Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage IC = 10mAdc Vdc Collector-Base Cut
N2221AUB NPN PNP SS SS 50V 60V 40-120, 100-300, 150mA 0.8A UB(LCC3) JANS2N2905AL 150mA 0.6A JANS2N2221AUBC /255 NPN SS 50V 40-120, 150mA 0.8A UB(LCC3) JANS2N2906A /291 PNP SS 60V 40-120, 150mA 0.6A /255 NPN SS JANS2N2222A 50V 100-300, 150mA 0.8A TO-18 JANS2N2906AL 0.6A /255/291 JANS2N2222AL NPN PNP SS SS 50V 60V 100-300, 40-120, 150mA 150mA 0.8A TO-18 JANS2N2906AUA /291 PNP SS 60V 40-120, 150mA 0.6A /255 NPN SS JANS2N2222AUA 50V 100-300, 150mA 0.8A UA(LCC4) JANS2N2906AUB 0.6A /255/291 JANS2N2222AUB NPN PNP SS SS 50V 60V 100-300, 40-120, 150mA 150mA 0.8A UB(LCC3) JANS2N2222AUBC /255/291 NPN PNP SS SS 50V 60V 100-300, 40-120, 150mA 150mA 0.8A UB(LCC3) JANS2N2906AUBC 0.6A /317 JANS2N2369A NPN SS 15V 30-120, 0.4mA 0.1A TO-18 JANS2N2907A /291 PNP SS 60V 100-300, 150mA 0.6A /317 NPN SS JANS2N2369AU 15V 30-120, 0.4mA 0.1A U(LCC6) JANS2N2907AL /291 PNP SS 60V 100-300, 150mA 0.6A /317 NPN SS JANS2N2369AUA 15V 30-120, 0.4mA 0.1A UA(LCC4) JANS2N2907AUA 150mA 0.6A /317/291 JANS2N2369AUB NPN PNP SS SS 15V 60V