2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA(Max.), IBL=-50nA(Max.) 1 6 2 5 3 4 A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. CHARACTERISTIC 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range P 5 J : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + H Low Collector Output Capacitance P DIM A A1 B B1 C D H J EMITTER BASE BASE COLLECTOR EMITTER COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 Q1 4 Q2 * Total Rating 1 2 Marking 3 Type
2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 *Low Leakage Current C FEATURES : ICEX=-50nA(Max.), IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. *Excellent DC Current Gain Linearity. *Low Saturation Voltage P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 MAXIMUM RATING (Ta=25) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 5 J : Cob=4.5pF(Max.) @VCB=5V. CHARACTERISTIC P H *Low Collector Output Capacitance P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 * Total Rating 1 2 6 5 3 Markin
2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 *Low Leakage Current C FEATURES : ICEX=-50nA(Max.), IBL=-50nA(Max.) D @VCE=-30V, VEB=-3V. *Excellent DC Current Gain Linearity. *Low Saturation Voltage P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 MAXIMUM RATING (Ta=25) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range 5 J : Cob=4.5pF(Max.) @VCB=5V. CHARACTERISTIC P H *Low Collector Output Capacitance P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 * Total Rating 1 2 6 5 3 Markin
T KTX311T KTA1532T KTX312T KTX511T KTA1535T KTA1536T -1.5A MPS8550S -100mA BC858W -500mA KTA2015 KTA511T -30V -800mA -1.5A -2A KTA1541T -3A KTA1542T KTA711T BC858 BC859 KTA1505S KTC9012S MMBTA63 MMBTA64 KTA1298 KTC8550S KTA1544T -5A -200mA 2N3906V 2N3906E 2N2906E KN3906S 2N3906S 2N3906U -40V -45V -600mA KTN2907U -100mA BC857W -200mA -500mA BC807W KN2907S KN4403S KTN2907S BCW69 BCW70 BC857 BC860 BC807 BCW68 -800mA -1.5A -150mA KTA2014F KTA501F KTA701F KTA2014V KTA2014E KTX301E KTA501E KTX102E KTA701E KTA711E KTA712E KTA2014 -200mA -50V -500mA -1A -2A -3A -5A -100mA -60V KTX102U KTA701U KTA711U KTA712U KTA1504S KTC9015S KTB1234T KTA1551T KTA1552T BCW89 -500mA -600mA KTX301U KTX302U KTA501U MMBTA55 KTN2907AE KTN2907AU KN2907AS KTN2907AS BC856W BC856 -1A -3A -5A -8A -65V -100mA 4 http://www.kec.co.kr Line-up Bipolar Junction Transistor PNP Transistor( VCEO : -12V ~ -65V ) SOT-89 (4.7X2.5) SOT-223 (6.8X1.8) DPAK TO-92M TO-92 TO-92L IPAK TO-126 TO-220IS TO-3P(H)IS TO-3P(N) (6.6X6.1) BC309 MPSA62 KTA129
2N2906E TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B B1 C A : ICEX=-50nA(Max.), IBL=-50nA(Max.) 1 6 2 5 3 4 DIM A A1 B B1 C D H J A1 Low Leakage Current C FEATURES D @VCE=-30V, VEB=-3V. Excellent DC Current Gain Linearity. Low Saturation Voltage P : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA. CHARACTERISTIC 1. Q 1 2. Q 1 3. Q 2 4. Q 2 5. Q 2 6. Q 1 ) SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range 5 J : Cob=4.5pF(Max.) @VCB=5V. MAXIMUM RATING (Ta=25 P H Low Collector Output Capacitance P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TES6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 4 Q1 Q2 * Total Rating Marking 1 2 6 5 3
91 91 91 91 91 92 92 92 92 93 94 95 95 96 97 98 98 99 99 99 100 101 101 102 102 103 103 103 104 104 104 105 105 105 106 106 106 107 108 108 108 109 109 109 110 110 111 111 111 112 112 112 113 114 114 114 115 116 117 http://www.keccorp.com 3 Index 2N2904E 2N2906E 2N3904 2N3904C 2N3904E 2N3904S 2N3904U 2N3904V 2N3906 2N3906C 2N3906E 2N3906S 2N3906U 2N3906V 2N5400 2N5400S 2N5401 2N5401C 2N5401S 2N5550 2N5550S 2N5551 2N5551C 2N5551S 2N7000 2N7000A 2N7000K 2N7002 2N7002A 2N7002K B10A100VIC B10A45VI B10A45VIC B10A60VIC B15A45VIC B15A60VIC B20A100VIC B20A45VIC B20A60VIC B30A45VIC B5A100VI B5A45VI B5A45VIC B5A60VI B5A60VIC BC237 BC238 BC239 BC307 BC308 BC309 BC327 BC328 BC337 BC338 BC516 BC517 BC546 BC547 BC548 BC549 BC550 BC556 BC557 BC558 BC559 BC560 BC637 BC638 BC807 BC817 BC846 BC846W BC847 BC847W BC848 BC848W BC849 BC850 BC856 BC856W BC857 BC857W BC858 BC858W 4 Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transistor Transis
2N2906E MARKING SPECIFICATION TES6 PACKAGE 1. Marking method Laser Marking ZA 1 3 No. 0 1 2. Marking 2 Item Marking Description Device Mark ZA 2N2906E hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Pin No. Dot Pin 1 Index. Note) * Lot No. marking method Character arrangement 1 st Character 1 (A) 2 (B) 3 (C) 4 (D) 5 (E) 6 (F) 7 (G) 8 (H) 9 (I) 0 (J) 2nd Character A (1) B (2) C (3) D (4) E (5) F (6) G (7) H (8) I (9) J (0) Year Marking (Week) Periode (Year) 1 st Year (2006) 01 02 51 52 2006-2010-2014... 2 nd Year (2007) 0A 0B 5A 5B 2007-2011-2015... 4 rd Year (2008) J1 J2 E1 E2 2008-2012-2016... 4 th Year (2009) JA JB EA EB 2009-2013-2017... Remark Rotation for 4 years 2008. 9. 5 Revision No : 0 1/1
2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC 2N3904C Transistor KEC BCV72 Transistor KEC KDB2151V Diode KEC KDS181 Diode KEC 2N3904E Transistor KEC BCW29 Transistor KEC KDB2153E Diode KEC KDS184 Diode KEC 2N3904S Transistor KEC BCW30 Transistor KEC KDB2153V Diode KEC KDS187 Diode KEC 2N3904U Transistor KEC BCW31 Transistor KEC KDB2155E Diode KEC KDS190 Diode KEC 2N3904V Transistor KEC BCW32 Transistor KEC KDB2155V Diode KEC KDS193 Diode KEC 2N3906 Transistor KEC BCW68 Transistor KEC KDB2451E Diode KEC KDS196 Diode KEC 2N3906C Transistor KEC BCW69 Transistor KEC KDB2453E Diode KEC KDS221E Diode KEC 2N3906E Transistor KEC BCW70 Transistor KEC KDB2455E Diode KEC KDS221V Diode KEC 2N3906S Transistor KEC BCW71 Transistor KEC KDB2491E Diode KEC KDS2236M Diode KEC 2N3906U Transistor KEC BCW72 Transistor KEC KDB2493E Diode KEC KDS2236S Diode KEC 2N3906V Transistor KEC BCW89 Tr
tage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range EQUIVALENT CIRCUIT (TOP VIEW) * Total Rating Marking 2008. 9. 23 Revision No : 1 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10A, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Curre
tage VEBO -5 V Collector Current IC -200 mA Base Current IB -50 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55150 Storage Temperature Range EQUIVALENT CIRCUIT (TOP VIEW) * Total Rating Marking 2008. 9. 23 Revision No : 1 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10A, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Curre
2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC 2N3904C Transistor KEC BCV72 Transistor KEC KDB2151V Diode KEC KDS181 Diode KEC 2N3904E Transistor KEC BCW29 Transistor KEC KDB2153E Diode KEC KDS184 Diode KEC 2N3904S Transistor KEC BCW30 Transistor KEC KDB2153V Diode KEC KDS187 Diode KEC 2N3904U Transistor KEC BCW31 Transistor KEC KDB2155E Diode KEC KDS190 Diode KEC 2N3904V Transistor KEC BCW32 Transistor KEC KDB2155V Diode KEC KDS193 Diode KEC KEC 2N3906 Transistor KEC BCW68 Transistor KEC KDB2451E Diode KEC KDS196 Diode 2N3906C Transistor KEC BCW69 Transistor KEC KDB2453E Diode KEC KDS221E Diode KEC 2N3906E Transistor KEC BCW70 Transistor KEC KDB2455E Diode KEC KDS221V Diode KEC 2N3906S Transistor KEC BCW71 Transistor KEC KDB2491E Diode KEC KDS2236M Diode KEC 2N3906U Transistor KEC BCW72 Transistor KEC KDB2493E Diode KEC KDS2236S Diode KEC 2N3906V Transistor KEC BCW8
mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR US6 EQUIVALENT CIRCUIT (TOP VIEW) 6 5 Q1 4 Q2 * Total Rating 1 2 3 6 5 4 Marking Lot No. Type Name ZC 1 2008. 9. 23 Revision No : 1 2 3 1/4 2N2906E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICEX VCE=-30V, VEB=-3V - - -50 nA Base Cut-off Current IBL VCE=-30V, VEB=-3V - - -50 nA Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -40 - - V Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-1mA, IB=0 -40 - - V Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5.0 - - V hFE(1) VCE=-1V, IC=-0.1mA 60 - - hFE(2) VCE=-1V, IC=-1mA 80 - - hFE(3) VCE=-1V, IC=-10mA 100 - 300 hFE(4) VCE=-1V, IC=-50mA 60 - - hFE(5) VCE=-1V, IC=-100mA 30 - - VCE(sat)1 IC=-10mA, IB=-1mA - - -0.25 VCE(sat)2 IC=-50mA, IB=-5mA - - -0.4 VBE(sat)1 IC=-10mA, IB=-1mA -0.65 - -0.85 VBE(sat)2 IC=-50mA, IB=-5mA - - -0.95 250 - - MHz DC Cu